Effect of Oxygen Flow Rate and Temperature on the Structure of DC Sputtered Nanocrystalline Copper Oxide Films

2007 ◽  
pp. 129-131 ◽  
Author(s):  
M.J. Chiang ◽  
C.W. Wu ◽  
H.E. Cheng
Keyword(s):  
Copper Oxide ◽  
Flow Rate ◽  
Oxide Films ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Nanocrystalline Copper ◽  
Effect Of Oxygen

Effect of Oxygen Flow Rate and Temperature on the Structure of DC Sputtered Nanocrystalline Copper Oxide Films

2007 ◽  
Vol 31 ◽  
pp. 129-131 ◽  
Author(s):  
M.J. Chiang ◽  
C.W. Wu ◽  
H.E. Cheng
Keyword(s):  
Copper Oxide ◽  
Band Gap ◽  
Flow Rate ◽  
Oxide Films ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Deposition Condition ◽  
X Ray Diffraction ◽  
Nanocrystalline Copper ◽  
X Ray

Copper oxide, a direct band gap semiconductor with band gap about 1.21-1.51 eV, has been regarded as a promising material for photovoltaic. Nanocrystalline copper oxide films have been synthesized on Si by dc sputtering method. The effects of oxygen flow rate and deposition temperature on the microstructure of nanocrystalline copper oxide films were investigated. X-ray diffraction analysis shows that a broaden peak of Cu2O (111) at 36.720 was observed at the deposition condition of DC power 150 W, pressure 2*10-2 Torr, substrate temperature 100 °C, Ar flow rate 15 sccm and O2 flow rate 1sccm. With increasing the oxygen flow rate to 3 and 5 sccm, CuO (-111) could be observed at 36.58o. The increase of oxygen flow rate resulted in the film formation from Cu2O to CuO. SEM pictures show that copper oxide films exhibit nanosize grains. X-ray diffraction patterns of CuO films deposited at 50~200 °C show that only (-111) plane is obtained. The SEM pictures show that the grain size increases with the deposition increases.

Niobium Oxide Films Deposited by Reactive Sputtering: Effect of Oxygen Flow Rate

10.3791/59929 ◽  
2019 ◽  
Author(s):  
Silvia L. Fernandes ◽  
Lucas J. Affonço ◽  
Roberto A. R. Junior ◽  
José H. D. da Silva ◽  
Elson Longo ◽  
...  
Keyword(s):  
Flow Rate ◽  
Niobium Oxide ◽  
Oxide Films ◽  
Reactive Sputtering ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Effect Of Oxygen

Role of oxygen flow rate on the structure and stoichiometry of cobalt oxide films deposited by reactive sputtering

2022 ◽  
Vol 40 (1) ◽  
pp. 013405
Author(s):  
Nilton Francelosi A. Neto ◽  
Cristiane Stegemann ◽  
Lucas J. Affonço ◽  
Douglas M. G. Leite ◽  
José H. D. da Silva
Keyword(s):  
Cobalt Oxide ◽  
Flow Rate ◽  
Oxide Films ◽  
Reactive Sputtering ◽  
Oxygen Flow Rate ◽  
Oxygen Flow

Spectroscopic Studies of Magnetron Sputtering Plasma Discharge in Cu/O2/Ar Mixture for Copper Oxide Thin Film Fabrication

2015 ◽  
Vol 73 (1) ◽  
Author(s):  
Jia Wei Low ◽  
Nafarizal Nayan ◽  
Mohd Zainizan Sahdan ◽  
Mohd Khairul Ahmad ◽  
Ali Yeon Md Shakaff ◽  
...  
Keyword(s):  
Thin Film ◽  
Copper Oxide ◽  
Flow Rate ◽  
Langmuir Probe ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Oxide Thin Film ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Copper Oxide Thin Film

Magnetron sputtering plasma for the deposition of copper oxide thin film has been investigated using optical emission spectroscopy and Langmuir probe. The intensity of the light emission from atoms and radicals in the plasma were measured using optical emission spectroscopy (OES). Then, Langmuir probe was employed to estimate the plasma density, electron temperature and ion flux. In present studies, reactive copper sputtering plasmas were produced at different oxygen flow rate of 0, 4, 8 and 16 sccm. The size of copper target was 3 inches. The dissipation rf power, Ar flow rate and working pressure were fixed at 400 W, 50 sccm and 22.5 mTorr, respectively. Since the substrate bias plays an important role to the thin film formation, the substrate bias voltages of 0, -40, -60 and -100 V were studied. Based on OES results, oxygen emission increased drastically when the oxygen flow rate above 8 sccm. On the other hand, copper and argon emission decreased gradually. In addition, Langmuir probe results showed a different ion flux when substrate bias voltage was applied. Based on these plasma diagnostic results, it has been concluded that the optimized parameter to produce copper oxide thin film are between -40 to -60 V of substrate bias voltage and between 8 to 12 sccm of oxygen flow rate.

Effect of Oxygen Flow Rate on the Memristive Behavior of Reactively Sputtered TiO2 Thin Films

2014 ◽  
Vol 1024 ◽  
pp. 64-67 ◽  
Author(s):  
Nur Syahirah Kamarozaman ◽  
Muhamad Uzair Shamsul ◽  
Sukreen Hana Herman ◽  
Wan Fazlida Hanim Abdullah
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Rf Magnetron Sputtering ◽  
Deposition Process ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Switching Behavior ◽  
Memristive Behavior ◽  
Effect Of Oxygen

The paper presents the memristive behavior of sputtered titania thin films on ITO substrate. Titania thin films were deposited by RF magnetron sputtering method while varying the oxygen flow rate of (O2/ (O2 + Ar) x100 = 10, 20 and 30 %) during deposition process. The effect of oxygen flow rate to the structural properties was studied including the physical thickness, and also the effect towards switching behavior. It was found that sample deposited at 20 % oxygen flow rate gave better memristive behavior compared to other samples, with larger ROFF/RON ratio of 9. The characterization of memristive behavior includes the effect of electroforming process and successive of I-V measurements are discussed.

scholarly journals Effect of oxygen flow rate on the deposition rate of α-Al2O3 coatings by anodic evaporation of Al in an arc discharge

2019 ◽  
Vol 1281 ◽  
pp. 012019
Author(s):  
N V Gavrilov ◽  
A S Kamenetskikh ◽  
P V Tretnikov ◽  
A V Chukin ◽  
A I Men’shakov
Keyword(s):  
Deposition Rate ◽  
Flow Rate ◽  
Arc Discharge ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Effect Of Oxygen ◽  
Α Al2o3
Sign in / Sign up

Export Citation Format

Share Document