Atomic Layer Deposition of Ruthenium and Ruthenium-oxide ThinFilms by Using a Ru(EtCp)$_{2}$ Precursor and Oxygen Gas

2009 ◽  
Vol 55 (1) ◽  
pp. 32-37 ◽  
Author(s):  
Woo-Hee Kim ◽  
Sang-Joon Park ◽  
DoYoung Kim ◽  
Hyungjun Kim
2018 ◽  
Vol 30 (24) ◽  
pp. 8983-8984 ◽  
Author(s):  
Dustin Z. Austin ◽  
Melanie A. Jenkins ◽  
Derryl Allman ◽  
Sallie Hose ◽  
David Price ◽  
...  

2021 ◽  
Vol 9 (12) ◽  
pp. 4307-4315
Author(s):  
Tai Nguyen ◽  
Nathalie Valle ◽  
Jérôme Guillot ◽  
Jérôme Bour ◽  
Noureddine Adjeroud ◽  
...  

The growth process of zinc oxide (ZnO) thin films by atomic layer deposition (ALD) accompanied by the presence of oxygen gas pulsing is investigated by means of the isotopic tracking of oxygen 18O from the water precursor and oxygen 16O from the gas.


2017 ◽  
Vol 29 (3) ◽  
pp. 1107-1115 ◽  
Author(s):  
Dustin Z. Austin ◽  
Melanie A. Jenkins ◽  
Derryl Allman ◽  
Sallie Hose ◽  
David Price ◽  
...  

2014 ◽  
Vol 26 (24) ◽  
pp. 7083-7090 ◽  
Author(s):  
Hyo Jun Jung ◽  
Jeong Hwan Han ◽  
Eun Ae Jung ◽  
Bo Keun Park ◽  
Jin-Ha Hwang ◽  
...  

2014 ◽  
Vol 610 ◽  
pp. 529-539 ◽  
Author(s):  
Ji-Yoon Park ◽  
Seungmin Yeo ◽  
Taehoon Cheon ◽  
Soo-Hyun Kim ◽  
Min-Kyu Kim ◽  
...  

2003 ◽  
Vol 15 (12) ◽  
pp. 1019-1022 ◽  
Author(s):  
Y.-S. Min ◽  
E.J. Bae ◽  
K.S. Jeong ◽  
Y.J. Cho ◽  
J.-H. Lee ◽  
...  

2021 ◽  
Vol 3 (1) ◽  
pp. 59-71
Author(s):  
Degao Wang ◽  
Qing Huang ◽  
Weiqun Shi ◽  
Wei You ◽  
Thomas J. Meyer

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