Comparison between SiOC Thin Film by plasma enhance chemical vapor deposition and SiO2 Thin Film by Fourier Transform Infrared Spectroscopy

2010 ◽  
Vol 56 (4) ◽  
pp. 1150-1155 ◽  
Author(s):  
teresa OH ◽  
Chi Kyu Choi
1995 ◽  
Vol 403 ◽  
Author(s):  
Tue Nguyen ◽  
Shusheng He ◽  
Lawrence J. Charnesky

AbstractSelective deposition of copper on metal (such as TiN) versus dielectric (such as oxide) requires understanding of the mechanism of chemical-vapor-deposition copper deposition. This work studies the initial stage of CVD copper deposition with hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (Cu-hfac-tmvs) precursor on tetraethylorthosilicate (TEOS) oxide using Fourier transform infrared spectroscopy (FTIR).


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