Implantation Energy Selection in Molecular Beam Epitaxy GaAs Films on Si Substrates

AbstractNominal 100 Å and 150 Å thick GaAs layers were deposited on Si substrates by a modulated molecular beam technique and normal molecular beam epitaxy (MBE) at 300 °C and 375 °C respectively for plan view and cross-sectional transmission electron microscopy (TEM) examinations. From coverage of Moire fringes, it is found that the nucleated GaAs films grown by the modulated molecular beam technique were thinner, streaker and more two-dimensional than the MBE grown films. The same modulated molecular beam technique was also used for the deposition of the initial buffer layer of 3µm thick GaAs on Si films. Results from the 77k photoluminescence(PL) and double crystal X ray diffraction measurements showed that these films have superior optical and structural quality compared to similar films grown by normal two-step MBE. The improvement is attributed to a more two-dimensional nucleation of GaAs films associated with the modulated molecular beam growth technique.

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Nucleation and Defect Structures of GaAs Films Grown on Reactive Ion Etched Si Substrates

MRS Proceedings ◽

10.1557/proc-198-225 ◽

1990 ◽

Vol 198 ◽

Author(s):

Henry P. Lee ◽

Thomas George ◽

Hyunchul Sohn ◽

Jay Tu ◽

Eicke R. Weber ◽

...

Keyword(s):

High Resolution ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Three Dimensional ◽

Cross Sectional ◽

Plan View ◽

Si Substrates ◽

Gaas Films ◽

Si Films ◽

Initial Buffer

ABSTRACTThe nucleation and interfacial defect structure of thin GaAs films grown on reactive ion etched Si substrates by normal molecular beam epitaxy (MBE) and modulated molecular beam epitaxy (MMBE) at 300°C were studied by plan view and high resolution cross-sectional electron microscopy (TEM). Plan view TEM micrographs show a pronounced three-dimensional (3-d) island type nucleation for the MBE grown sample. A high density of microtwins is also found in these nucleated islands from high resolution cross-sectional TEM micrographs. The 3-d nucleation and the interfacial twinning is suppressed however in the MMBE grown samples. The FWHM of the (400) Bragg peak for 3 μm thick GaAs on Si films shows a reduction of 60 arcseconds when the initial buffer layer is grown by MMBE as compared to normal MBE.

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Near-Surface Aggregation of Sn In Heavily Sn-Doped GaAs Films Grown By Molecular Beam Epitaxy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100118710 ◽

1985 ◽

Vol 43 ◽

pp. 368-369

Author(s):

S. H. Chen

Keyword(s):

Molecular Beam Epitaxy ◽

Cross Section ◽

Electron Spectroscopy ◽

Molecular Beam ◽

Surface Segregation ◽

Secondary Ion Mass Spectrometry ◽

Specimen Preparation ◽

Near Surface ◽

Gaas Films ◽

Secondary Ion

Sn has been used extensively as an n-type dopant in GaAs grown by molecular-beam epitaxy (MBE). The surface accumulation of Sn during the growth of Sn-doped GaAs has been observed by several investigators. It is still not clear whether the accumulation of Sn is a kinetically hindered process, as proposed first by Wood and Joyce, or surface segregation due to thermodynamic factors. The proposed donor-incorporation mechanisms were based on experimental results from such techniques as secondary ion mass spectrometry, Auger electron spectroscopy, and C-V measurements. In the present study, electron microscopy was used in combination with cross-section specimen preparation. The information on the morphology and microstructure of the surface accumulation can be obtained in a fine scale and may confirm several suggestions from indirect experimental evidence in the previous studies.

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Selective epitaxial growth of dot structures on patterned Si substrates by gas source molecular beam epitaxy

Semiconductor Science and Technology ◽

10.1088/0268-1242/14/3/009 ◽

1999 ◽

Vol 14 (3) ◽

pp. 257-265 ◽

Cited By ~ 26

Author(s):

Eun Soo Kim ◽

Noritaka Usami ◽

Yasuhiro Shiraki

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Si Substrates ◽

Selective Epitaxial Growth ◽

Gas Source

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Structural and optical properties of self-assembled AlN nanowires grown on SiO2/Si substrates by molecular beam epitaxy

Nanotechnology ◽

10.1088/1361-6528/abe2c7 ◽

2021 ◽

Vol 32 (19) ◽

pp. 195601

Author(s):

Ž Gačević ◽

J Grandal ◽

Q Guo ◽

R Kirste ◽

M Varela ◽

...

Keyword(s):

Optical Properties ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Structural And Optical Properties ◽

Si Substrates ◽

Self Assembled

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Comparison of the Optical Properties of Er3+ Doped Gallium Nitride Prepared by Metalorganic Molecular Beam Epitaxy (MOMBE) and Solid Source Molecular Beam Epitaxy (SSMBE)

MRS Proceedings ◽

10.1557/proc-595-f99w11.65 ◽

1999 ◽

Vol 595 ◽

Cited By ~ 1

Author(s):

U. Hömmerich ◽

J. T. Seo ◽

J. D. MacKenzie ◽

C. R. Abernathy ◽

R. Birkhahn ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Excited States ◽

Room Temperature ◽

Molecular Beam ◽

Average Lifetime ◽

Green Luminescence ◽

Si Substrates ◽

Lifetime Analysis ◽

Metalorganic Molecular Beam Epitaxy ◽

Er Doped

AbstractWe report on the luminescence properties of Er doped GaN grown prepared by metalorganic molecular beam epitaxy (MOMBE) and solid-source molecular beam epitaxy (SSMBE) on Si substrates. Both types of samples emitted characteristic 1.54 µm PL resulting from the intra-4f Er3+ transition 4I13/2→4I15/2. Under below-gap excitation the samples exhibited very similar 1.54 µm PL intensities. On the contrary, under above-gap excitation GaN: Er (SSMBE) showed ∼80 times more intense 1.54 µm PL than GaN: Er (MOMBE). In addition, GaN: Er (SSMBE) also emitted intense green luminescence at 537 nm and 558 nm, which was not observed from GaN: Er (MOMBE). The average lifetime of the green PL was determined to be 10.8 µs at 15 K and 5.5 µs at room temperature. A preliminary lifetime analysis suggests that the decrease in lifetime is mainly due to the strong thermalization between the 2H11/2 and 4S3/2 excited states. Nonradiative decay processes are expected to only weakly affect the green luminescence.

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