Velocity overshoot degradation in short-channel AlGaAs/GaAs HEMTs due to the minimum electron acceleration lengths

2017 ◽  
Vol 71 (6) ◽  
pp. 355-359
Author(s):  
Jaeheon Han
Keyword(s):  
Electron Acceleration ◽  
Short Channel ◽  
Velocity Overshoot

scholarly journals Monte Carlo Calibrated Drift-Diffusion Simulation of Short Channel HFETs

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 319-323
Author(s):  
A. Asenov ◽  
S. Babiker ◽  
S. P. Beaumont ◽  
J. R. Barker
Keyword(s):  
Monte Carlo ◽  
Mobility Model ◽  
Channel Length ◽  
Drift Diffusion ◽  
Short Channel ◽  
Velocity Overshoot ◽  
Saturation Velocity ◽  
Mc Simulation ◽  
Diffusion Simulation ◽  
Good Agreement

In this paper we present a methodology to use drift diffusion (DD) simulations in the design of short channel heterojunction FETs (HFETs) with well pronounced velocity overshoot. In the DD simulations the velocity overshoot in the channel is emulated by forcing the saturation velocity in the field dependent mobility model to values corresponding to the average velocity in the channel obtained from Monte Carlo (MC) simulation. To illustrate our approach we compare enhanced DD and MC simulation results for a pseudomorphic HEMTs with 0.12 μm channel length, which are in good agreement. The usefulness of the described methodology is illustrated in a simulation example of self aligned gamma gate pseudomorphic HEMTs. The effect of the gamma gate shape and the self aligned contacts on the overall device performance has been investigated.

Carrier Transport and Velocity Overshoot in Strained Si On Sige Heterostructures

1998 ◽  
Vol 533 ◽  
Author(s):  
David K. Ferry ◽  
Gabriele Formicone ◽  
Dragica Vasileska
Keyword(s):  
Monte Carlo ◽  
Enhancement Factor ◽  
Carrier Transport ◽  
State Of The Art ◽  
Carrier Dynamics ◽  
Device Performance ◽  
Short Channel ◽  
Strained Si ◽  
Velocity Overshoot ◽  
Ensemble Monte Carlo

AbstractWe examine the velocity overshoot effect in strained Six on Six-Ge1-x heterostructures. We also investigate the performance of surface-channel strained-Si MOSFETs for devices with gate lengths representative of the state-of-the-art technology. The Ensemble Monte Carlo method, self-consistently coupled with the 2D Poisson equation solver, is used in the investigation of the device performance. Our simulations suggest that, in short-channel devices, velocity overshoot is very important. In fact, when velocity overshoot occurs, it greatly affects the carrier dynamics and the current enhancement factor of both surface-channel strained-Si and conventional Si MOSFETs.

Monte Carlo study of 50 nm-long single and dual-gate MODFETs: suppression of short-channel effects

1993 ◽  
Vol 3 (9) ◽  
pp. 1719-1728
Author(s):  
P. Dollfus ◽  
P. Hesto ◽  
S. Galdin ◽  
C. Brisset
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Study ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects ◽  
Dual Gate
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