Dependence of Electrical and Optical Properties of the Al Doped ZnO for Transparent Conductors Deposited by rf–Magnetron Sputtering on the O2/Ar Gas Flow Ratio

2007 ◽  
pp. 564-566
Author(s):  
Chong Mu Lee ◽  
Keun Bin Yim ◽  
Choong Mo Kim
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Gas Flow ◽  
Rf Magnetron Sputtering ◽  
Transparent Conductors ◽  
Flow Ratio ◽  
Electrical And Optical Properties ◽  
Gas Flow Ratio ◽  
Doped Zno ◽  
Ar Gas

Dependence of Electrical and Optical Properties of the Al Doped ZnO for Transparent Conductors Deposited by rf–Magnetron Sputtering on the O2/Ar Gas Flow Ratio

2007 ◽  
Vol 336-338 ◽  
pp. 564-566 ◽  
Author(s):  
Chong Mu Lee ◽  
Keun Bin Yim ◽  
Choong Mo Kim
Keyword(s):  
Surface Roughness ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Gas Flow ◽  
Rf Magnetron Sputtering ◽  
Transparent Conductors ◽  
Flow Ratio ◽  
Gas Flow Ratio ◽  
Magnetron Sputter Deposition ◽  
Ar Gas

ZnO:Al thin films were deposited on sapphire(001) substrates by RF magnetron sputtering. Effects of the O2/Ar flow ratio in the sputtering process on the crystallinity, surface roughness, carrier concentration, carrier mobility, and optical properties of the films were investigated. AFM analysis results show that the surface roughness is lowest at the O2/Ar flow ratio of 0.5 and tends to increase owing to the increase of the grain size as the O2/Ar flow ratio increases further than 0.5. According to the Hall measurement results the resistivity increases as the O2/Ar flow ratio increases. The transmittance of the film tends to increase as the O2/Ar gas flow ratio increases up to 0.5 but it nearly does not change with continued increases in the O2/Ar flow ratio. Considering the effects of the the O2/Ar flow ratio on the surface roughness, electrical resistivity and transmittance properties of the ZnO:Al film the optimum O2/Ar flow ratio is 0.5 in the RF magnetron sputter deposition of the ZnO:Al film.

scholarly journals Electrical and optical properties of Ga-doped ZnO thin films deposited by DC magnetron sputtering

2020 ◽  
Vol 4 (1) ◽  
pp. 15
Author(s):  
Lukman Nulhakim ◽  
Monna Rozana ◽  
Brian Yuliarto ◽  
Hisao Makino
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Gas Flow ◽  
Transparent Conducting Oxide ◽  
Visible Range ◽  
Dc Magnetron Sputtering ◽  
Electrical And Optical Properties ◽  
Doped Zno ◽  
Ar Gas

The electrical and optical properties of Ga-doped ZnO (GZO) thin film prepared by direct current (dc) magnetron sputtering were investigated. The GZO thin film was deposited on a glass substrate at a substrate temperature (Ts) of room temperature (RT), 150 °C, and 200 °C using DC power of 100 W and an Ar gas flow rate of 450 sccm. The thickness of films was maintained at about 200 nm by controlling the deposition rate of about 12.5 nm/minute. The result showed that the electrical properties improved with increasing Ts. The films deposited at Ts of 200 °C showed the lowest resistivity, highest hall mobility, and carrier concentration compared to other Ts. The average transmittance of the films in the visible range (380-750 nm) was approximately 86.04%. The value of the optical band gap (Eg) was approximately 3.8 eV. The results suggested that GZO films deposited by DC magnetron sputtering at Ts of 200 °C can be applied to transparent conducting oxide (TCO) as an electrode in optoelectronic applications such as solar cells, LEDs and display technology.

The Effect of Target to Substrate Distance on the Properties of HAZO Films Deposited by Magnetron Sputtering

2011 ◽  
Vol 685 ◽  
pp. 134-140 ◽  
Author(s):  
Wei Ming Lu ◽  
Jun Zhang ◽  
Hong Wei Diao ◽  
Lei Zhao ◽  
Wen Jing Wang
Keyword(s):  
Residual Stress ◽  
Grain Size ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Systematic Study ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Electrical And Optical Properties ◽  
Substrate Distance ◽  
Doped Zno

Hydrogen doped AZO films (HAZO) were prepared by RF magnetron sputtering. A systematic study of the effect of substrate to target distance (Dst) on the structural, electrical and optical properties of the as-grown HAZO films was carried out. Compared with the Al-doped ZnO films, the hydrogen in the atmosphere influenced the growth of the films by incorporating in the films and bombarding the surface of the film, namely, the Dst, which induced the residual stress and the roughness of the films decreasedwith an increase of the Dst. The films showed a smaller grain size. The surfacework function of the films changed with the composition of the films, reaching a maximum at 7.5cm.

Electrical and optical properties of Al-doped ZnO–SnO2 thin films deposited by RF magnetron sputtering

2008 ◽  
Vol 516 (17) ◽  
pp. 5814-5817 ◽  
Author(s):  
Kazuo Satoh ◽  
Yoshiharu Kakehi ◽  
Akio Okamoto ◽  
Shuichi Murakami ◽  
Kousuke Moriwaki ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Electrical And Optical Properties ◽  
Sno2 Thin Films ◽  
Doped Zno
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