Effects of the O2/Ar gas flow ratio on the electrical and transmittance properties of ZnO:Al films deposited by RF magnetron sputtering

2006 ◽  
Vol 17 (2-4) ◽  
pp. 875-877 ◽  
Author(s):  
Keunbin Yim ◽  
Hyounwoo Kim ◽  
Chongmu Lee
2007 ◽  
Vol 336-338 ◽  
pp. 564-566 ◽  
Author(s):  
Chong Mu Lee ◽  
Keun Bin Yim ◽  
Choong Mo Kim

ZnO:Al thin films were deposited on sapphire(001) substrates by RF magnetron sputtering. Effects of the O2/Ar flow ratio in the sputtering process on the crystallinity, surface roughness, carrier concentration, carrier mobility, and optical properties of the films were investigated. AFM analysis results show that the surface roughness is lowest at the O2/Ar flow ratio of 0.5 and tends to increase owing to the increase of the grain size as the O2/Ar flow ratio increases further than 0.5. According to the Hall measurement results the resistivity increases as the O2/Ar flow ratio increases. The transmittance of the film tends to increase as the O2/Ar gas flow ratio increases up to 0.5 but it nearly does not change with continued increases in the O2/Ar flow ratio. Considering the effects of the the O2/Ar flow ratio on the surface roughness, electrical resistivity and transmittance properties of the ZnO:Al film the optimum O2/Ar flow ratio is 0.5 in the RF magnetron sputter deposition of the ZnO:Al film.


2018 ◽  
Vol 33 (2) ◽  
pp. 349-355
Author(s):  
Jingjun Wu ◽  
Xin Ye ◽  
Jin Huang ◽  
Laixi Sun ◽  
Yong Zeng ◽  
...  

Coatings ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 34 ◽  
Author(s):  
Ki Seong Lim ◽  
Young Seok Kim ◽  
Sung Hwan Hong ◽  
Gian Song ◽  
Ki Buem Kim

In this study, Mo–Si–N coatings were deposited on Si wafers and tungsten carbide substrates using a reactive direct current magnetron sputtering system with a MoSi powder target. The influence of sputtering parameters, such as the N2 gas flow ratio and working pressure, on the microstructure and mechanical properties (hardness (H), elastic modulus (E), and H/E ratio) of the Mo–Si–N coatings was systematically investigated using X-ray diffractometry (XRD), scanning electron microscopy (SEM), nanoindentation, and transmission electron microscopy (TEM). The gas flow rate was a significant parameter for determining the crystallinity and microstructure of the coatings. A Mo2N crystalline coating could be obtained by a high N2 gas flow ratio of more than 35% in the gas mixture, whereas an amorphous coating could be formed by a low N2 gas flow ratio of less than 25%. Furthermore, the working pressure played an important role in controlling the smooth surface and densified structure of the Mo–Si–N coating. For the amorphous Mo–Si–N coating deposited with the lowest working pressure (1 mTorr), the hardness, elastic modulus, and H/E ratio reached from 9.9 GPa, 158.8 GPa, and 0.062 up to 17.9 GPa, 216.1 GPa, and 0.083, respectively.


2012 ◽  
Vol 535-537 ◽  
pp. 764-767 ◽  
Author(s):  
Tao Bai ◽  
Qing Lian Zhang

SUS304 stainless steel samples were sputter-etched by a radio frequency (RF) magnetron sputtering apparatus. Correlations between the formation of conical protrusions on the steel surface and sputter parameters, such as sputter power, anode-to-substrate distance, argon gas flow ratio and sputter-etching time were discussed. The results show that the conical protrusion precipitates both uniformly and densely on the surface with the power being 600W, the anode-to-substrate distance being 50mm, the argon gas flow ratio being 50sccm and the sputter-etching time being 6h.


1993 ◽  
Vol 310 ◽  
Author(s):  
J.J. Van Glabbeek ◽  
G.A.C.M. Spierings ◽  
M.J.E. Ulenaers ◽  
G.J.M. Dormans ◽  
P.K. Larsen

AbstractDry etching of a Pt/PbZrxTi1−xO3/Pt (Pt/PZT/Pt) ferroelectric capacitor stack with CF4/Ar plasmas with a reactive ion etching process for the fabrication of micrometer-sized integrated ferroelectric capacitors is described. The etch rate for both Pt and PZT is determined as a function of the process settings: Power, pressure and CF4-Ar gas flow ratio. A chemical enhancement of the etch rate is found for PZT. It is shown that it is possible to etch the Pt/PZT/Pt ferroelectric capacitor stack in a CF4/Ar plasma in a single lithographic process using patterning by photoresist masking. Redeposition processes occurring during etching are described.


Sign in / Sign up

Export Citation Format

Share Document