Hardness and Elastic Modulus of ZnO Thin Films Fabricated by PLD Method

2007 ◽  
pp. 2966-2969
Author(s):  
Han Ki Yoon ◽  
Yun Sik Yu
Keyword(s):  
Thin Films ◽  
Elastic Modulus ◽  
Zno Thin Films

Hardness and Elastic Modulus of ZnO Thin Films Fabricated by PLD Method

2007 ◽  
Vol 353-358 ◽  
pp. 2966-2969
Author(s):  
Han Ki Yoon ◽  
Yun Sik Yu
Keyword(s):  
Thin Films ◽  
Elastic Modulus ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Uv Laser ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electroluminescence Device ◽  
Type Semiconductor

ZnO is an n-type semiconductor having a hexagonal wurzite structure. ZnO exhibits good piezoelectric and optical properties, and might be a good candidate for an electroluminescence device like an UV laser diode. Then, these devices are very small, their films are very thin and they are prepared in the limited size and shape, so they are unsuitable for the extensive mechanical testing. In this present work, ZnO thin films are prepared on the glass, GaAs(100), Si(100) and Si(111) substrates at various temperatures by the pulsed laser deposition (PLD) method. ZnO thin films were evaluated by X-ray diffraction (XRD) and mechanical properties such as hardness and elastic modulus were measured through the nano-indenter.

Hydrogen Effect on Structure and Mechanical Properties of ZnO Films Deposited in Ar/H2 Plasma

2010 ◽  
Vol 66 ◽  
pp. 156-161 ◽  
Author(s):  
Ruben Bartali ◽  
V. Micheli ◽  
G. Gottardi ◽  
I. Luciu ◽  
N. Laidani
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Elastic Modulus ◽  
Optical Emission ◽  
Zno Thin Films ◽  
Zno Films ◽  
Hydrogen Effect ◽  
Plasma Species ◽  
Ar Gas ◽  
Film Porosity

In the present work the mechanical properties of ZnO thin films, deposited on Si (100) substrates, were studied using the nanoindentation technique. ZnO thin films were deposited by radiofrequency sputtering from a ZnO target with different H2/Ar gas mixtures. During the deposition the plasma species were in-situ monitored using optical emission spectroscopy (OES). The results showed that the introduction of H2 in the plasma phase had a strong effect on the material’s hardness and elastic modulus. The measured elastic modulus values were then related to the material density to estimate the porosity of the ZnO films. We found an increased film porosity when H2 was added to the sputtering gas, from 6% to 18% in volume. Moreover we found that the porosity was correlated by the emission intensity ratio of atomic Argon on atomic Hydrogen.

Influence of N Dopant on the Electric and Magnetic Properties of Co Doped ZnO Thin Films

2010 ◽  
Vol 25 (7) ◽  
pp. 711-716 ◽  
Author(s):  
Xue-Tao WANG ◽  
Li-Ping ZHU ◽  
Zhi-Gao YE ◽  
Zhi-Zhen YE ◽  
Bing-Hui ZHAO
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Co Doped

Fabrication of ZnO Thin Films from Nanocrystal Inks

2010 ◽  
Vol 114 (46) ◽  
pp. 19815-19821 ◽  
Author(s):  
Anthony J. Morfa ◽  
Gary Beane ◽  
Benjamin Mashford ◽  
Birendra Singh ◽  
Enrico Della Gaspera ◽  
...  
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Nanocrystal Inks

Etching characteristics of ZnO thin films in chlorine-containing inductively coupled plasmas

2006 ◽  
Vol 83 (2) ◽  
pp. 328-335 ◽  
Author(s):  
S.W. Na ◽  
M.H. Shin ◽  
Y.M. Chung ◽  
J.G. Han ◽  
S.H. Jeung ◽  
...  
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Coupled Plasmas
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