Etching Mechanism of ZnO Thin Films in Inductively Coupled Plasma

2007 ◽  
pp. 65-68
Author(s):  
Chan Min Kang ◽  
Jong Sik Kim ◽  
Gwan Ha Kim ◽  
Chang Il Kim
Keyword(s):  
Thin Films ◽  
Inductively Coupled Plasma ◽  
Zno Thin Films ◽  
Inductively Coupled ◽  
Etching Mechanism

Etching mechanism of (Pb,Sr)TiO3 thin films for DRAM application using Cl2/Ar inductively coupled plasma

Vacuum ◽  
2004 ◽  
Vol 74 (3-4) ◽  
pp. 485-489 ◽  
Author(s):  
Gwan-Ha Kim ◽  
Kyoung-Tae Kim ◽  
Dong-Pyo Kim ◽  
Chang-Il Kim
Keyword(s):  
Thin Films ◽  
Inductively Coupled Plasma ◽  
Inductively Coupled ◽  
Etching Mechanism

Etching characteristic of ZnO thin films in an inductively coupled plasma

2008 ◽  
Vol 202 (22-23) ◽  
pp. 5705-5708 ◽  
Author(s):  
J.C. Woo ◽  
G.H. Kim ◽  
J.G. Kim ◽  
C.I. Kim
Keyword(s):  
Thin Films ◽  
Inductively Coupled Plasma ◽  
Zno Thin Films ◽  
Inductively Coupled

Inductively coupled plasma post-treatment of Al-doped ZnO thin films

2011 ◽  
Vol 11 (4) ◽  
pp. S30-S32 ◽  
Author(s):  
Kyu Seomoon ◽  
Joonyeong Kim ◽  
Suyong Ju ◽  
Pyungwoo Jang ◽  
Kwang-Ho Kim
Keyword(s):  
Thin Films ◽  
Inductively Coupled Plasma ◽  
Post Treatment ◽  
Zno Thin Films ◽  
Inductively Coupled ◽  
Doped Zno

Luminescent properties of ZnO thin films treated by pulse-modulated high-power inductively coupled plasma

2011 ◽  
Vol 257 (16) ◽  
pp. 7156-7159
Author(s):  
J.B. Wang ◽  
Z.S. Hu ◽  
X.L. Zhong ◽  
Y.J. Zhang ◽  
T. Ishigaki ◽  
...  
Keyword(s):  
Thin Films ◽  
High Power ◽  
Inductively Coupled Plasma ◽  
Luminescent Properties ◽  
Zno Thin Films ◽  
Inductively Coupled

Etching Mechanism of ZnO Thin Films in Inductively Coupled Plasma

2007 ◽  
Vol 124-126 ◽  
pp. 65-68
Author(s):  
Chan Min Kang ◽  
Jong Sik Kim ◽  
Gwan Ha Kim ◽  
Chang Il Kim
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Inductively Coupled Plasma ◽  
Etch Rate ◽  
Zno Thin Films ◽  
X Ray ◽  
Inductively Coupled ◽  
Mixing Ratios ◽  
Dc Bias ◽  
By Products

The etching properties of the ZnO thin films in the inductively coupled Cl2/Ar plasma (ICP) were studied in the terms of etch rate and selectivity as functions of gas mixing ratio, ICP coil power and dc bias voltage. The maximum etch rate of 129.3 nm/min was obtained for the mixture of 20% Ar/80% Cl2. The X-ray photoelectron spectroscopy (XPS) analyses of the ZnO surfaces etched at various Cl2/(Cl2+Ar) mixing ratios revealed the formation of the ZnClx and ClOx reaction by-products as a result of the increased etch rate with increasing Cl2 addition, compared with 100% Ar+ sputter etching. From the analysis of these data, it was proposed that the maximum on the etch rate may be explained by the concurrence of chemical and physical pathways in the ion assisted chemical reaction.

Sign in / Sign up

Export Citation Format

Share Document