Optical Absorption and Photoluminescence in Defect-Stannite-Type Semiconductor ZnGa2Se4

2020 ◽  
Vol 38 ◽  
pp. 10-16
Author(s):  
Shunji Ozaki ◽  
Shingo Mukada
Keyword(s):  
Optical Absorption ◽  
Absorption Coefficient ◽  
Temperature Dependence ◽  
Band Gap ◽  
Brillouin Zone ◽  
Band Edge ◽  
Near Band Edge ◽  
Pl Spectra ◽  
Shrinkage Effect ◽  
Type Semiconductor

Optical absorption and photoluminescence (PL) spectra were measured on defect-stannite-type semiconductor ZnGa2Se4 at temperatures T from 11 to 300 K. The square of the absorption coefficient spectra showed distinct two absorption edges, which were E0A,B and E0C,D transitions at Γ point in the Brillouin zone. The temperature dependence of the direct-gap energies, E0A,B and E0C,D, of ZnGa2Se4 were determined and fit using the analytical four-parameter expression developed for the explanation of the band-gap shrinkage effect in semiconductors. The PL emissions at near band-edge and at higher energy than band-edge were also observed at T ≤ 150 K.

scholarly journals Optical Absorption and Piezoelectric Effect Investigation in Single Crystal of AgGaGe3Se7.6Te0.4 Solid Solution

2016 ◽  
Vol 17 (4) ◽  
pp. 539-543 ◽  
Author(s):  
A.S. Krymus ◽  
I.V. Kityk ◽  
O.V. Parasyuk ◽  
G.L. Myronchuk
Keyword(s):  
Solid Solution ◽  
Optical Absorption ◽  
Absorption Coefficient ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Band Gap ◽  
Spectral Distribution ◽  
Urbach Energy ◽  
Piezoelectric Effect ◽  
Kinetics Of

In present work spectral distribution of absorption coefficient in the range of 100 – 300 K was investigated and band gap values  evaluated. Parameters of Urbach rule were calculated and linearity  of temperature dependence of Urbach energy was showed. Thermo induced piezoelectric effect in a range of 297 ‑ 357 K was investigated. Laser induced kinetics of piezomodule was investigated and absence of irreversible changes was showed. Influence of heating the crystal during laser illuminating on piezoelectric module was adjusted.

Optical Absorption of Doped and Undoped Bulk SiC

2000 ◽  
Vol 640 ◽  
Author(s):  
K. Miller ◽  
Q. Zhou ◽  
J. Chen ◽  
M. O. Manasreh ◽  
Z. C. Feng ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Optical Absorption ◽  
Band Gap ◽  
Absorption Spectra ◽  
Spectral Region ◽  
Sharp Peak ◽  
Band Edge ◽  
Optical Absorption Spectra ◽  
Bulk Silicon ◽  
Free Carriers

ABSTRACTOptical absorption spectra of undoped, n-type, and semi-insulating 6H and 4H bulk silicon carbide (SiC) were obtained in the spectral region of 200 – 3200 nm (6.20 – 0.3875 eV). Several features were observed in the absorption spectra collected for various samples. A sharp peak below the band gap was observed in 4H SiC. The intensity of this peak was observed to increase in samples that exhibit larger absorption due to free carriers, which leads us to conclude that the defect responsible for this peak is also the source of the free carriers in the materials. Additionally, a series of optical absorption peaks separated by approximately 21 meV were observed around 0.9185 eV (1350 nm). These peaks are zero phonon lines of intraband transitions in the VSi 3d shell. The optical absorption near the band edge was observed to be sample dependent. The variation of the band gap as a function of temperature is also observed to be sample dependent.

Near band edge optical absorption and photoluminescence dynamics in bulk InAsN dilute-nitride materials

2010 ◽  
Vol 312 (19) ◽  
pp. 2705-2709 ◽  
Author(s):  
D. Wang ◽  
S.P. Svensson ◽  
L. Shterengas ◽  
G. Belenky
Keyword(s):  
Optical Absorption ◽  
Band Edge ◽  
Near Band Edge ◽  
Dilute Nitride

Excitation-Power Dependence of the Near Band-Edge PL Spectra of CdMnTe with High Mn Concentrations

2011 ◽  
Author(s):  
Younghun Hwang ◽  
Youngho Um ◽  
Hyoyeol Park ◽  
Jisoon Ihm ◽  
Hyeonsik Cheong
Keyword(s):  
Excitation Power ◽  
Band Edge ◽  
Near Band Edge ◽  
Power Dependence ◽  
Pl Spectra ◽  
Mn Concentrations

TUNING OF THE MAGNETIC FIELD INDUCED SHARP BAND-EDGE OPTICAL ABSORPTION IN EUROPIUM CHALCOGENIDES

2004 ◽  
Vol 18 (27n29) ◽  
pp. 3813-3816 ◽  
Author(s):  
A. B. HENRIQUES ◽  
L. K. HANAMOTO ◽  
E. TER HAAR ◽  
E. ABRAMOF ◽  
A. Y. UETA ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Magnetic Fields ◽  
Optical Absorption ◽  
Low Temperatures ◽  
Optical Transition ◽  
Band Edge ◽  
Near Band Edge ◽  
High Magnetic Fields ◽  
Sharp Band ◽  
The Magnetic Field

The near band-edge polarized optical optical absortion spectra of EuTe at low temperatures and high magnetic fields were investigated. The samples were grown by MBE on BaF 2 substrates, and the thickness varied in the 0.18-2.0 μm range. At high magnetic fields, the well-known 4f7→4f65d(t2g) optical transition splits into two well resolved lines at σ+ and two lines for σ-. These lines can be described by localized transitions tunable by the d-f exchange interaction, with a quadratic dependence on the intensity of the external magnetic field. Comparative measurements of the magnetization and the optical absorption as a function temperature provides a further test of the model of a localized excitation extending over a few lattice sites.

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