Difference in Electronic Structure between Diamond and Graphite

2012 ◽  
Vol 229-231 ◽  
pp. 74-77 ◽  
Author(s):  
Jian Hong Gong ◽  
Shu Xia Lin ◽  
Wang Li ◽  
Jun Gao

The structural and electronic properties of diamond and graphite were investigated by the first-principles total-energy pseudopotential method based on density functional theory. The band structure, DOS and PDOS were calculated. Results showed that diamond had a wide band gap, and its direct transition energy is 6.0 eV. But graphite’s band gap is about zero, meaning without transition energy. That explains the reasons of diamond acting as an insulator but graphite acting as a conductor. DOS and PDOS analysis results indicate both diamond and graphite are sp hybridization and p states contribute mostly to the bonding of crystal. While their covalent bonds style are different.

2006 ◽  
Vol 527-529 ◽  
pp. 1583-1586 ◽  
Author(s):  
I. Suarez-Martinez ◽  
G. Savini ◽  
M.I. Heggie

Carbon nanotubes present interesting potential applications especially in nanoelectronics. Their electrical properties are known to be a function of their chirality. It happens that 1/3 of CNs are metallic and 2/3 are semiconductors. Narrow nanotubes are expected to be wide-band gap semiconductors. Several experimental results have shown that the thickness of a multi-wall nanotube along the axis can change, while the interlayer spacing remains fairly constant. These observations suggest the coexistence in the same tube of a scroll structure and a multi-wall nested tube. We explain this defect as a screw dislocation which by gliding transforms between these two forms. In this paper, we present a density functional theory study of the structure and energetics of screw dislocations in AA and ABC graphite, and we discuss their role in the scroll-to-nanotube transformation in multi-wall nanotubes.


2012 ◽  
Vol 465 ◽  
pp. 33-36
Author(s):  
Zhi Dong Lin ◽  
Wen Long Song ◽  
Ju Cheng Zheng

The band structure and density of states (DOS) of Ti1-xSnxO2 solid solutions with x=0, 1/8, 1/4, 1/2 and 1 were investigated by means of the first-principle calculations based on density functional theory. The result indicated that band gap and Fermi level of TiO2-SnO2 vary continuously from those of pure TiO2 to those of Sn content increasing. In addition, the DOS moves towards low energy and the bang gap is broadened with growing value of x. The wide band gap and the low density of the states in the conduction band result in the enhancement of photoactivity in Ti1-xSnxO2.


2016 ◽  
Vol 30 (16) ◽  
pp. 1650176 ◽  
Author(s):  
Yifen Zhao ◽  
Decong Li ◽  
Zuming Liu

The structural properties, phase transitions, and electronic structures of Cu2ZnSnS4 (CZTS) in the three structures have been researched using the first-principles density functional theory (DFT). The results indicate that the energies of stannite (ST) and pre-mixed Cu–Au (PMCA) CZTS are higher than those of kesterite (KS) CZTS, indicating that the KS CZTS is more stable. We found the phase transition pressure between the KS and ST structures of CZTS is about 32 GPa. Moreover, for KS- and PMCA-CZTS, there exists in the mischcrystal phase between 52 GPa and 65 GPa. The band structures show that the KS- and ST-CZTS are direct band gap semiconductors. The band gaps of three-type CZTS increase with increasing pressure, and the maximum band gap of KS and ST structures for CZTS occurs at 50 GPa. However, PMCA CZTS possesses metal property. Furthermore, the PMCA CZTS translates from metal to the indirect semiconductor with increasing pressure. The results play an important role in future experimental and theoretical work for CZTS materials.


2017 ◽  
Vol 16 ◽  
pp. 47-51
Author(s):  
Emmanuel Igumbor ◽  
Ezekiel Omotoso ◽  
Walter Ernst Meyer

We present results of defect formation energies and charge state thermodynamic transition levels of Mg and Te interstitials in MgTe wurzite structure. We use the generalized gradient approximation and local density approximation functionals in the framework of density functional theory for all calculations. The formation energies of the Mg and Te interstitials in MgTe for both the tetrahedral and hexagonal configurations were obtained. The Mg and Te interstitials in MgTe depending on the functional, introduced transition state levels that are either donor or acceptor within the band gap of the MgTe. The Te interstitial exhibit charge states controlled metastability, negative-U and DX centre properties. The Mg interstitial acts as deep or shallow donor and there is no evidence of acceptor levels found for the Mg interstitial.


RSC Advances ◽  
2019 ◽  
Vol 9 (17) ◽  
pp. 9522-9532 ◽  
Author(s):  
Sajad Ahmad Dar ◽  
Ramesh Sharma ◽  
Vipul Srivastava ◽  
Umesh Kumar Sakalle

In the present paper, double perovskite Ba2InTaO6 was investigated in terms of its structural, electronic, optical, elastic, mechanical, thermodynamic and thermoelectric properties using density-functional theory (DFT).


2010 ◽  
Vol 24 (20) ◽  
pp. 2187-2193 ◽  
Author(s):  
M. P. GHIMIRE ◽  
SANDEEP ◽  
R. K. THAPA

CrO 2 has a wide band gap for "down" spins and the Fermi level lies in the middle of the band gap. Calculations based on the local-spin density approximation (LSDA) has been performed to investigate the electronic and physical properties of CrO 2 in the rutile structure (P42/mnm). We considered the semicore electrons as valence electrons and found that CrO 2 appears to be half-metallic with a direct band gap of 1.8 eV in spin-down and has metallic behavior in spin-up configurations.


2016 ◽  
Vol 4 (29) ◽  
pp. 11498-11506 ◽  
Author(s):  
Taehun Lee ◽  
Yonghyuk Lee ◽  
Woosun Jang ◽  
Aloysius Soon

Using first-principles density-functional theory calculations, we investigate the advantage of using h-WO3 (and its surfaces) over the larger band gap γ-WO3 phase for the anode in water splitting. We demonstrate that h-WO3 is a good alternative anode material for optimal water splitting efficiencies.


2012 ◽  
Vol 26 (32) ◽  
pp. 1250217
Author(s):  
XIAO-XIAO SUN ◽  
ZHI-RU REN ◽  
DAO-GUANG WANG

High pressure studies of BiI 3 at 0 K are performed using first-principles pseudopotential calculations within the framework of density functional theory. The calculations indicate that BiI 3 undergoes a structural transition from rhombohedral R-3 phase to monoclinic P2 1/c phase at 7 GPa which is accompanied by a 5.8% volume collapse. In addition, we find that P2 1/c phase prevails about 60 GPa range and transforms to cubic Fm-3m phase at 68 GPa, and finally takes the orthorhombic Pnma phase at high pressures up to 133 GPa. The structural and electronic properties of four competitive structures are also calculated. The analysis of density of states reveals that BiI 3 has semiconductor-metal transition at about 61 GPa, which also demonstrates the metallic nature of both Fm-3m and Pnma phases.


2021 ◽  
Vol 871 ◽  
pp. 254-263
Author(s):  
Zhan Cheng ◽  
Guan Xing Zhang ◽  
Wei Min Long ◽  
Svitlana Maksymova ◽  
Jian Xiu Liu

The first-principles calculations by CASTEP program based on the density functional theory is applied to calculate the cohesive energy, enthalpy of formation, elastic constant, density of states and Mulliken population of Ag3Sn、AgZn3 and Ag5Zn8. Furthermore, the elastic properties, bonding characteristics, and intrinsic connections of different phases are investigated. The results show that Ag3Sn、AgZn3 and Ag5Zn8 have stability structural, plasticity characteristics and different degrees of elastic anisotropy; Ag3Sn is the most stable structural, has the strongest alloying ability and the best plasticity. AgZn3 is the most unstable structure, has the worst plasticity; The strength of Ag5Zn8 is strongest, AgZn3 has the weakest strength, the largest shear resistance, and the highest hardness. Ag5Zn8 has the maximum Anisotropy index and Ag3Sn has the minimum Anisotropy index. Ag3Sn、AgZn3 and Ag5Zn8 are all have covalent bonds and ionic bonds, the ionic bonds decrease in the order Ag3Sn>Ag5Zn8>AgZn3 and covalent bonds decreases in the order Ag5Zn8>Ag3Sn>AgZn3.


Sign in / Sign up

Export Citation Format

Share Document