Effect of Deposition Power on the Structure Properties of Microcrystalline Silicon Thin Films

2013 ◽  
Vol 442 ◽  
pp. 116-119
Author(s):  
Jing Wei Chen ◽  
Lei Zhao ◽  
Hong Wei Diao ◽  
Su Zhou ◽  
Ge Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Spectroscopic Analysis ◽  
Chemical Vapor ◽  
Microcrystalline Silicon ◽  
Raman Spectrometry ◽  
Force Microscopy ◽  
Silicon Thin Films ◽  
Atomic Force ◽  
Deposition Power ◽  
Structure Properties

Microcrystalline silicon thin films prepared by plasma enhanced chemical vapor deposition (PECVD). Effects of deposition power on the microstructure properties of the thin films were investigated by Raman spectrometry, Fourier transform infrared absorption spectroscopy (FTIR) and atomic force microscopy (AFM). With increasing deposition power from 100 W to 900 W, the growth rate increased from 0.75Å/s to 2.96Å/s. The Raman spectrometry measurements showed that the peak of all films is nearby at 514 nm. The FTIR spectroscopic analysis exhibit that with power increasing the intensities of both the (Si-H)nstretching mode component at 2100cm-1and wagging mode component at 620cm-1increase. The surface morphology of the films using the AFM showed the surface roughness and voids of the films increase with deposition power increasing.

Local photoconductivity of microcrystalline silicon thin films measured by conductive atomic force microscopy

2011 ◽  
Vol 5 (10-11) ◽  
pp. 373-375 ◽  
Author(s):  
Martin Ledinský ◽  
Antonín Fejfar ◽  
Aliaksei Vetushka ◽  
Jiří Stuchlík ◽  
Bohuslav Rezek ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Microcrystalline Silicon ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Silicon Thin Films ◽  
Atomic Force

Experimental Investigation of the Impact of Annealing on Resistivity of Boron-Doped Hydrogenated Nanocrystalline Silicon Thin Films

2010 ◽  
Vol 29-32 ◽  
pp. 1883-1887
Author(s):  
Hai Bin Pan ◽  
Yuan Tian ◽  
Guang Gui Cheng ◽  
Li Qiang Guo
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Force Microscopy ◽  
Silicon Thin Films ◽  
Atomic Force ◽  
Boron Doped ◽  
The Impact ◽  
The Relationship

Boron-doped hydrogenated nanocrystalline silicon (nc-Si:H) thin films were deposited by plasma enhanced chemical vapor deposition (PECVD). Microstructures of these films were characterized and analyzed by Raman spectrum and atomic force microscopy (AFM). Thickness and resistivity of these films was measured by high-resolution profilometer and four-point probe respectively. The impact of annealing on boron-doped nc-Si:H thin films’ resistivity and the relationship between resistivity and microstructure were investigated. The results show that annealing and the annealing temperature have great impact on resistivity of nc-Si:H thin films as a result of microstructures changing after annealing. Resistivity of nc-Si:H thin films decreases after annealing, but it rises with the increasing annealing temperature in the range of 250°C to 400°C.

scholarly journals Influence of the growth parameters of TiO2 thin films deposited by the MOCVD method

Cerâmica ◽  
2002 ◽  
Vol 48 (305) ◽  
pp. 38-42 ◽  
Author(s):  
M. I. B. Bernardi ◽  
E. J. H. Lee ◽  
P. N. Lisboa-Filho ◽  
E. R. Leite ◽  
E. Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Parameters ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Parameters

The synthesis of TiO2 thin films was carried out by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during growth on the final structural characteristics was studied. A combination of the following experimental parameters was studied: temperature of the organometallic bath, deposition time, and temperature and substrate type. The high influence of those parameters on the final thin film microstructure was analyzed by scanning electron microscopy with electron dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction.

Microscopic Characterizations of Nanostructured Silicon Thin Films for Solar Cells

2011 ◽  
Vol 1321 ◽  
Author(s):  
Antonín Fejfar ◽  
Petr Klapetek ◽  
Jakub Zlámal ◽  
Aliaksei Vetushka ◽  
Martin Ledinský ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Maxwell Equations ◽  
Amorphous Matrix ◽  
Optical Power ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Silicon Thin Films ◽  
Atomic Force

ABSTRACTMicroscopic characterization of mixed phase silicon thin films by conductive atomic force microscopy (C-AFM) was used to study the structure composed of conical microcrystalline grains dispersed in amorphous matrix. C-AFM experiments were interpreted using simulations of electric field and current distributions. Density of absorbed optical power was calculated by numerically solving the Maxwell equations. The goal of this study is to combine both models in order to simulate local photoconductivity for understanding the charge photogeneration and collection in nanostructured solar cells.

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