Simple Microcantilever Release Process of Silicon Piezoresistive Microcantilever Sensor Using Wet Etching

2014 ◽  
Vol 660 ◽  
pp. 894-898
Author(s):  
Rosminazuin A. Rahim ◽  
Badariah Bais ◽  
Majlis Burhanuddin Yeop

In this paper, a simple microcantilever release process using anisotropic wet etching is presented. The microcantilever release is conducted at the final stage of the fabrication of piezoresistive microcantilever sensor. Issues related to microcantilever release such as microscopic roughness and macroscopic roughness has been resolved using simple technique. By utilizing silicon oxide (SiO2) as the etch stop for the wet etching process, issues related to microscopic roughness can be eliminated. On the other hand, proper etching procedure with constant stirring of the etchant solution of KOH anisotropic etching significantly reduces the notching effect contributed by the macroscopic roughness. Upon the completion of microcantilever release, suspended microcantilever of 2μm thick is realized with the removal of SiO2layer using Buffered Oxide Etching (BOE).

2013 ◽  
Vol 2 (11) ◽  
pp. P97-P100
Author(s):  
M.-G. Song ◽  
B. U. Yoon ◽  
K.-T. Lee ◽  
S.-Y. Choi

Author(s):  
Masafumi Ito ◽  
Keigo Takeda ◽  
Tatsuo Shiina ◽  
Yasuyuki Okamura ◽  
Hisao Nagai ◽  
...  

Materials ◽  
2021 ◽  
Vol 14 (11) ◽  
pp. 3026
Author(s):  
Woo-Jae Kim ◽  
In-Young Bang ◽  
Ji-Hwan Kim ◽  
Yeon-Soo Park ◽  
Hee-Tae Kwon ◽  
...  

The use of NF3 is significantly increasing every year. However, NF3 is a greenhouse gas with a very high global warming potential. Therefore, the development of a material to replace NF3 is required. F3NO is considered a potential replacement to NF3. In this study, the characteristics and cleaning performance of the F3NO plasma to replace the greenhouse gas NF3 were examined. Etching of SiO2 thin films was performed, the DC offset of the plasma of both gases (i.e., NF3 and F3NO) was analyzed, and a residual gas analysis was performed. Based on the analysis results, the characteristics of the F3NO plasma were studied, and the SiO2 etch rates of the NF3 and F3NO plasmas were compared. The results show that the etch rates of the two gases have a difference of 95% on average, and therefore, the cleaning performance of the F3NO plasma was demonstrated, and the potential benefit of replacing NF3 with F3NO was confirmed.


2010 ◽  
Vol 518 (8) ◽  
pp. 2147-2151
Author(s):  
Abderrafia Moujoud ◽  
Sungho Kang ◽  
Hyun Jae Kim ◽  
Mark Andrews

2011 ◽  
Vol 19 (11) ◽  
pp. 10834 ◽  
Author(s):  
Amirkianoosh Kiani ◽  
Krishnan Venkatakrishnan ◽  
Bo Tan ◽  
Venkat Venkataramanan

2004 ◽  
Vol 68 (1) ◽  
pp. 221-228
Author(s):  
YOSHIOMI HIRANAGA ◽  
YASUO WAGATSUMA ◽  
YASUO CHO

1982 ◽  
Vol 104 (3) ◽  
pp. 533-535
Author(s):  
A. K. Naghdi

Based on classic theory of beams and certain modifications, a simple technique is derived in order to obtain an approximate value of the maximum bending moment in a rotationally symmetric circular plate with a variable thickness. It is assumed that one of the two concentric boundaries of the plate is clamped, and the other is free. Numerical examples for both cases of constant and variable thickness plates subject to uniform pressure or rim line loading are presented.


2004 ◽  
Author(s):  
Min Xiang ◽  
Yanmin Cai ◽  
Yaming Wu ◽  
Jianyi Yang ◽  
Yuelin Wang

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