Epitaxial Growth and Characterization of Nonpolar A-Plane AlGaN-Based Multiple Quantum Wells

2018 ◽  
Vol 934 ◽  
pp. 8-12
Author(s):  
Jian Guo Zhao ◽  
Xiong Zhang ◽  
Jia Qi He ◽  
Shuai Chen ◽  
Zi Li Wu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Chemical Vapor ◽  
Multiple Quantum Wells ◽  
Modulation Method ◽  
Duty Ratio ◽  
Organic Chemical ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Metal Organic

A serious of non-polar a-plane AlGaN-based multiple quantum wells (MQWs) were successfully grown on the semi-polar r-plane sapphire substrate with metal organic chemical vapor deposition technology. Intense MQWs-related emission peaks at an emission wavelength covered from 277-294 nm were observed based on the photoluminescence measurement. It was found that the employment of the trimethyl-aluminum (TMAl) flow duty-ratio modulation method which was developed based on the two-way pulsed-flows growth technique played a crucial role to control the Al composition of the non-polar a-plane AlGaN epi-layers. The non-polar a-plane AlGaN-based MQWs were deposited with the new developed TMAl flow duty-ratio modulation technique. Evident-3th order X-ray diffraction (XRD) satellite peak was observed from the high resolution-XRD measurement, proving the successful growth of non-polar a-plane AlGaN-based MQWs with abrupt hetero-interfaces.

Optical Transitions and Recombination Lifetimes in GaN and InGaN Epilayers, and InGaN/GaN and GaN/AlGaN Multiple Quantum Wells

1996 ◽  
Vol 449 ◽  
Author(s):  
M. Smith ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
A. Khan ◽  
Q. Chen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Chemical Vapor ◽  
Multiple Quantum Wells ◽  
Organic Chemical ◽  
Multiple Quantum ◽  
Optical Transitions ◽  
Time Resolved ◽  
Metal Organic ◽  
Recombination Lifetimes ◽  
Time Resolved Photoluminescence

ABSTRACTTime-resolved photoluminescence (PL) has been employed to study the optical transitions and their dynamical processes in GaN and InxGa1-xN epilayers, and GaN/GaN and GaN/ALxGa1-xN multiple quantum wells (MQW). We compare the results from both metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) grown samples. In addition, results are also compared with GaAs/ALxGa1-xAs MQW. It was found for all samples that the low temperature emission lines were dominated by radiative recombination transitions of either localized or free excitons, which demonstrates the high quality and purity of these III-nitride materials.

Growth and characterization of semipolar InGaN/GaN multiple quantum wells and light-emitting diodes on (10 11) GaN templates

2005 ◽  
Vol 892 ◽  
Author(s):  
Arpan Chakraborty
Keyword(s):  
Quantum Wells ◽  
Chemical Vapor ◽  
Emission Wavelength ◽  
Organic Chemical ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Reactor Pressure

AbstractInGaN/GaN MQW samples were grown by metal organic chemical vapor deposition (MOCVD) on (10-1-1) oriented GaN templates. Effects of growth temperature and reactor pressure on the photoluminescence (PL) properties were investigated. The emission intensity improved significantly when the QWs were grown at 100 Torr, compared to higher pressure growths. The effect of well-width on the luminescence properties was investigated and an optimum well width of 40 Å was determined. Excitation dependent PL measurements revealed no shift in the PL emission wavelength suggesting the absence of electric field in the quantum wells. Furthermore, LEDs fabricated on (1011) GaN templates, emitting at 439 nm, showed no shift in the EL emission wavelength with the increase in drive current, reconfirming the absence of polarization.

Kinematic versus dynamic approaches of x‐ray diffraction simulation. Application to the characterization of InGaAs/InGaAlAs multiple quantum wells

1996 ◽  
Vol 79 (5) ◽  
pp. 2332-2336 ◽  
Author(s):  
E. Idiart‐Alhor ◽  
J. Y. Marzin ◽  
M. Quillec ◽  
G. Le Roux ◽  
G. Patriarche
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
X Ray

Intersubband Transitions in GaN/AlxGa1-xN Multi Quantum Wells

2004 ◽  
Vol 829 ◽  
Author(s):  
E. A. DeCuir ◽  
Y. C. Chua ◽  
B. S. Passmore ◽  
J. Liang ◽  
M. O. Manasreh ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Chemical Vapor ◽  
Charge Carriers ◽  
Organic Chemical ◽  
Multiple Quantum ◽  
Intersubband Transitions ◽  
Metal Organic ◽  
Si Doped ◽  
Organic Chemical Vapor Deposition ◽  
Absorption Technique

ABSTRACTIntersubband transitions (ISTs) in GaN/AlxGa1-xN multiple quantum wells (MQWs) were investigated using an optical absorption technique. Several samples were grown by either Molecular Beam Epitaxy (MBE) or Metal-Organic Chemical Vapor Deposition (MOCVD) and were investigated using both normal incident and waveguide configurations. The waveguides were fabricated by dicing each sample into 2 mm wide by 5 mm long pieces with two facets polished at 45 degrees with respect to the surface such that light propagates across the sample's width. Preliminary results indicate that ISTs are observable in Si-doped and undoped GaN/AlxGa1-xN MQWs. The source of these charge carriers in the undoped samples are explained as being due to the spontaneous polarization effect which exists at the GaN/AlxGa1-xN interfaces where the GaN surface has Ga-polarity. Scanning Electron Microscopy indicates that a sample containing what appeared to be a large number of cracks and or hexagonal voids lacked the presence of ISTs.

Photoluminescence and Recombination Mechanisms in Nitride-Based Multiple Quantum Wells

2015 ◽  
Vol 764-765 ◽  
pp. 1250-1254
Author(s):  
Ya Fen Wu ◽  
Jiunn Chyi Lee
Keyword(s):  
Quantum Wells ◽  
Stark Effect ◽  
Multiple Quantum Well ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Multiple Quantum ◽  
Incident Power ◽  
Quantum Confined Stark Effect ◽  
Metal Organic ◽  
Quantum Confined

The InGaN/AlGaN multiple-quantum-well heterostructures were fabricated by metal-organic chemical vapor deposition system with different indium and aluminum content during the growth of InGaN well layers and AlGaN barrier layers. Temperature-and incident-power-dependent photoluminescence were carried out to examine the recombination mechanisms in the heterostructures. Both of the localization effect and quantum-confined Stark effect are considered. From the experimental and theoretical analysis, the dependence of optical characteristics on the temperature and incident-power are consistent with the recombination mechanisms involving band-tail states and the screen of quantum-confined Stark effect.

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