scholarly journals Effect of Deposition Temperature on Surface Morphology and Electrical Properties of Fluorine Doped Tin Oxide (FTO) Thin Film by Spray Pyrolysis Technique

2015 ◽  
Vol 773-774 ◽  
pp. 652-656
Author(s):  
Noor Sakinah Khalid ◽  
Soo Ren How ◽  
Jais Lias ◽  
Mohd Khairul Ahmad

Fluorine doped tin oxide (FTO) thin films were prepared at different deposition temperatures using the spray pyrolysis deposition (SPD) technique. The deposition temperature were ranging from 250°C °C to 450°C and the precursor used was 0.5M of SnCl4.5H2O and 1.527M of NH4F completely dissolved in distilled water. It was observed that the conductivity of the FTO thin film increased with increasing of deposition temperature. At 450°C, it was shown the conductivity became smaller. Surface morphologies of FTO thin films at different deposition temperature had shown that the growth of crystallite particles and its distributions were totally affected by the deposition temperature. The transmittance of FTO thin films was over 80% within the wavelength from 300 nm - 800 nm. Thus, the best deposition temperature to be used is around 350°C to 400°C for depositing the FTO film.

2020 ◽  
Vol 20 (3) ◽  
pp. 36-51
Author(s):  
A. Gahtar ◽  
S. Benramache ◽  
C. Zaouche ◽  
A. Boukacham ◽  
A. Sayah

AbstractIn this work, we have prepared new materials of the nickel sulfide thin films by using the spray pyrolysis technique for promising co-catalyst to improve the photocatalytic performance or superconductivity. The effect of deposition temperature (523, 573 and 623 K) on structural, optical and electrical properties was investigated. The XRD diffraction shows that the prepared nickel sulfide at 523, 573 and 623 K having an orthorhombic, hexagonal and hexagonal structure, which were Ni3S2, Ni17S18 and NiS2, respectively. The minimum value of crystallite size (45,9 nm) was measured of deposited film at 573K. The thin films prepared at 523 and 573 K have an average transmittance is about 20 %. The prepared Ni1S2 thin film at T=623 K has the lowest calculated optical band gap and Urbach energy. The Ni1S2 thin film also has the best calculated of the refractive index and the extinction coefficient. The FTIR spectrums of the nickel sulfide have various bands such as Ni-S, C-H, O-H, N–H and C-S. The maximum electrical conductivity is 4,29x105 (Ω.cm)−1 was obtained at 573K of the Ni17S18. The nickel sulfide thin films sprayed at 573K have good structural, optical and electrical properties.


Coatings ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 963
Author(s):  
Sarra Dridi ◽  
Eric Aubry ◽  
Nabila Bitri ◽  
Fatma Chaabouni ◽  
Pascal Briois

The direct synthesis of chalcopyrite Cu2MnSnS4 (CMTS) thin films by a spray pyrolysis technique on glass substrates under oxidative conditions (ambient atmosphere and using compressed air as a carrier gas instead of nitrogen) was studied. The effect of the deposition temperature on the structural, chemical composition, and optical and electrical properties of thin films has been assessed. X-ray diffraction study reveals that the tetragonal stannite structure crystallizes with a [112] preferential orientation from 280 up to 360 °C, with its crystallinity correlated with the substrate temperature. However, in addition to its crystallization, traces of secondary phases are observed: a mixture of SnO and CuO at 360 °C prevails on the formation of CuS at 320 °C. Above 360 °C, the oxidant conditions combined with the loss in sulfur lead to the crystallization of only the tenorite CuO. The crystallization of sulfides by spray pyrolysis under air is possible only at relatively low deposition temperature for which the oxidation rate is inefficient compared to the sulfidation rate. Further optical studies of stannite films indicate a high absorption coefficient toward the visible range (>104 cm−1) and an optical band gap of about 1.64–1.85 eV, also depending on the substrate temperature. The CMTS thin films deposited below 360 °C exhibit a moderate electrical resistivity of about Ω·cm at room temperature. The properties of the stannite films synthesized using a spray pyrolysis technique in ambient air are comparable to those of films obtained by spray pyrolysis with nitrogen carrier gas despite the presence of oxides traces, an increase in the deposition temperature improving the microstructure, and its related optical and electrical properties.


2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
G. E. Patil ◽  
D. D. Kajale ◽  
V. B. Gaikwad ◽  
G. H. Jain

Nanostructured SnO2 thin films were grown by the chemical spray pyrolysis (CSP) method. Homemade spray pyrolysis technique is employed to prepare thin films. SnO2 is wide bandgap semiconductor material whose film is deposited on glass substrate using aqueous solution of SnCl4·5H2O as a precursor. XRD (X-ray diffraction), UV (ultraviolet visible spectroscopy), FESEM (field emission scanning electron microscopy), and EDS (energy dispersive spectroscopy) analysis are done for structural, optical, surface morphological, and compositional analysis. XRD analysis shows polycrystalline nature of samples with pure phase formation. Crystallite size calculated from diffraction peaks is 29.92 nm showing nanostructured thin films. FESEM analysis shows that SnO2 thin film contains voids with nanoparticles. EDS analysis confirms the composition of deposited thin film on glass substrate. UV-visible absorption spectra show that the bandgap of SnO2 thin film is 3.54 eV. Bandgap of SnO2 thin film can be tuned that it can be used in optical devices.


Author(s):  
Sofea Nabila Hazmin ◽  
F. S. S. Zahid ◽  
N. S. M. Sauki ◽  
M. H. Mamat ◽  
M. N. Amalina

<span>This paper presents the physical and optical properties of AZO thin films on Teflon substrate at low deposition temperature by spray pyrolysis. In this study, the effect of different process parameters such as spray time and substrate to nozzle distance on the physical and optical characteristic of aluminium doped zinc oxide (AZO) deposited on Teflon substrates was investigated. The AZO thin films were successfully deposited onto Teflon substrate by spray pyrolysis technique at low deposition temperature. The physical analysis by X-ray diffraction (XRD) shows that the deposited Teflon substrate films have a preferred orientation along the direction (100) and (101). Optical measurements were conducted using Jasco/V-670 Ex Uv-Vis-NIR Spectrophotometer model to confirms that in visible ray it is possible to get good reflectance of AZO films with a reflection of 80%. The values of band gaps Eg were calculated from the spectra of UV-Visible reflectance that were vary between 3.06 and 3.14 eV. </span>


1995 ◽  
Vol 403 ◽  
Author(s):  
V. Foglietti ◽  
A. Galbato ◽  
A. Bearzotti ◽  
A. Galloppa ◽  
P. Maltese

AbstractBismuth-doped tin oxide films have been deposited using a new spray-pyrolysis deposition system. Among the properties are the possibility of depositing thin films over very large areas with good uniformity and the relatively small cost compared with other types of deposition systems. The apparatus is divided in two major parts, the aerosol chamber and the deposition chamber. The deposition chamber consists of a flat rotating hot plate that can house substrates up to 18 cm in diameter. Deposition temperature ranges from 290 °C to 350 °C. The SEM pictures show a phase transition from amorphous to polycrystalline which also strongly affects the transport properties of the film. The high values of the surface resistivity obtained are consistent with those ones required to develop an analog grey scale ferroelectric liquid crystal display. The sample shows a 20% uniformity in the value of surface resistivity over an area of 140 cm2, and the results obtained until now show a satisfactory reproducibility. Bismuth and Tin concentration versus deposition temperature have been determined by ICP mass spectrometry. Our work is supported by the ESPRIT project “PROFELICITA”.


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