Research of Angled 8° Integrated 808 nm Wavelength SLDs

2011 ◽  
Vol 84-85 ◽  
pp. 598-602
Author(s):  
Si Yu Zhang ◽  
Zhong Liang Qiao ◽  
Bao Xue Bo ◽  
Xin Gao ◽  
Yi Qu ◽  
...  
Keyword(s):  
Emission Spectrum ◽  
Output Power ◽  
Room Temperature ◽  
Continuous Wave ◽  
Seed Source ◽  
Full Width ◽  
Half Maximum

Integrated 808 nm wavelength super-luminescent diodes (SLDs) with a ring seed source and a tapered amplifier were fabricated tilted at 8° from the facet normal. Max-output power of 700 mW was obtained in continuous wave (CW) mode under room temperature, and the full width at half maximum (FWHM) of the emission spectrum is 36 nm.

High Performance 785 nm Wavelength Super-Luminescent Diodes

2011 ◽  
Vol 84-85 ◽  
pp. 594-597
Author(s):  
Si Yu Zhang ◽  
Zhong Liang Qiao ◽  
Xin Gao ◽  
Yi Qu ◽  
Guo Jun Liu ◽  
...  
Keyword(s):  
Emission Spectrum ◽  
Output Power ◽  
High Performance ◽  
Room Temperature ◽  
Continuous Wave ◽  
Ring Cavity ◽  
Maximum Output Power ◽  
Maximum Output ◽  
Full Width ◽  
Half Maximum

High-performance 785 nm wavelength super-luminescent diodes (SLDs) with ring cavity were fabricated. The maximum output power of 100 mW was obtained in continuous wave (CW) mode under room temperature. The full width at half maximum (FWHM) of the emission spectrum was 24 nm.

Photoluminescence of Erbium-Diffused Silicon

1996 ◽  
Vol 422 ◽  
Author(s):  
H. Horiguchi ◽  
T. Kinone ◽  
R. Saito ◽  
T. Kimura ◽  
T. Ikoma
Keyword(s):  
Room Temperature ◽  
Crystalline Silicon ◽  
Luminescence Spectra ◽  
Main Peak ◽  
Silicon Substrates ◽  
Annealing Atmosphere ◽  
Full Width ◽  
Half Maximum ◽  
Strong Luminescence ◽  
Fine Structures

AbstractErbium films are evaporated on crystalline silicon substrates and are thermally diffused into silicon in an Ar+02 or H2 flow. Very sharp Er3+-related luminescence peaks are observed around 1.54 μ m.The main peak as well as the fine structures of the luminescence spectra depend on the annealing atmosphere, suggesting different luminescence centers. The full width at half maximum (FWHM) of the main peaks is ≤ 0.5nm at 20K. Thermal diffusion with Al films on top of the Er films is found to increase the intensity of the Er3+-related peaks greatly. The temperature dependence between 20 K and room temperature is relatively small, and a strong luminescence is obtained at room temperature.

scholarly journals Observation of strong excitonic magneto-chiral anisotropy in twisted bilayer van der Waals crystals

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Shoufeng Lan ◽  
Xiaoze Liu ◽  
Siqi Wang ◽  
Hanyu Zhu ◽  
Yawen Liu ◽  
...  
Keyword(s):  
Time Reversal ◽  
Room Temperature ◽  
Photochemical Reactions ◽  
Full Width ◽  
Half Maximum ◽  
A Value ◽  
Device Applications ◽  
Spectral Splitting ◽  
Iron Garnet ◽  
Spontaneous Magnetic Moment

AbstractThe interplay between chirality and magnetism generates a distinct physical process, the magneto-chiral effect, which enables one to develop functionalities that cannot be achieved solely by any of the two. Such a process is universal with the breaking of parity-inversion and time-reversal symmetry simultaneously. However, the magneto-chiral effect observed so far is weak when the matter responds to photons, electrons, or phonons. Here we report the first observation of strong magneto-chiral response to excitons in a twisted bilayer tungsten disulfide with the amplitude of excitonic magneto-chiral (ExMCh) anisotropy reaches a value of ~4%. We further found the ExMCh anisotropy features with a spectral splitting of ~7 nm, precisely the full-width at half maximum of the excitonic chirality spectrum. Without an externally applied strong magnetic field, the observed ExMCh effect with a spontaneous magnetic moment from the ferromagnetic substrate of thulium iron garnet at room temperature is favorable for device applications. The unique ExMCh processes provide a new pathway to actively control magneto-chiral applications in photochemical reactions, asymmetric synthesis, and drug delivery.

Chromium-doped forsterite laser with 11 W of continuous-wave output power at room temperature

1997 ◽  
Vol 36 (33) ◽  
pp. 8601 ◽  
Author(s):  
Nickolay Zhavoronkov ◽  
Aleksander Avtukh ◽  
Victor Mikhailov
Keyword(s):  
Output Power ◽  
Room Temperature ◽  
Continuous Wave ◽  
Continuous Wave Output Power

scholarly journals Observation of strong excitonic magneto-chiral anisotropy in twisted bilayer van der Waals crystals

2020 ◽  
Author(s):  
Shoufeng Lan ◽  
Xiaoze Liu ◽  
Siqi Wang ◽  
Hanyu Zhu ◽  
Yawen Liu ◽  
...  
Keyword(s):  
Time Reversal ◽  
Room Temperature ◽  
Photochemical Reactions ◽  
Full Width ◽  
Half Maximum ◽  
A Value ◽  
Device Applications ◽  
Spectral Splitting ◽  
Iron Garnet ◽  
Spontaneous Magnetic Moment

Abstract The interplay between chirality and magnetism generates a distinct physical process, the magneto-chiral effect, which enables one to develop functionalities that cannot be achieved solely by any of the two. Such a process is universal with the breaking of parity-inversion and time-reversal symmetry simultaneously. However, the magneto-chiral effect observed so far is weak when the matter responds to photons, electrons, or phonons. Here we report the first observation of strong magneto-chiral response to excitons in a twisted bilayer tungsten disulfide with the amplitude of excitonic magneto-chiral (ExMCh) anisotropy reaches a value of ~4%. We further found the ExMCh anisotropy features with a spectral splitting of ~7 nm, precisely the full-width at half maximum of the excitonic chirality spectrum. Without an externally applied strong magnetic field, the observed ExMCh effect with a spontaneous magnetic moment from the ferromagnetic substrate of thulium iron garnet at room temperature is favorable for device applications. The unique ExMCh processes provide a new pathway to actively control magneto-chiral applications in photochemical reactions, asymmetric synthesis, and drug delivery.

Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure

2007 ◽  
Vol 556-557 ◽  
pp. 427-430 ◽  
Author(s):  
Anatoly M. Strel'chuk ◽  
Alexander A. Lebedev ◽  
N.S. Savkina ◽  
Alexey N. Kuznetsov
Keyword(s):  
Activation Energy ◽  
Emission Band ◽  
Room Temperature ◽  
Free Exciton ◽  
Charge Carriers ◽  
Full Width ◽  
Half Maximum ◽  
Exciton Annihilation ◽  
Increasing Temperature ◽  
Injection Electroluminescence

We present the injection electroluminescence spectra in the temperature range 290-760 K of 3C-SiC pn structure, which was fabricated by sublimation epitaxy in vacuum on 6H-SiC substrate. The dominant emission band of injection electroluminescence (IEL) spectrum was observed in the green region; at room temperature the IEL intensity outside the region of hν ≈ 2.0- 2.5 eV was less than 3% of that of the green peak. The peak parameters at room temperature are: hνmax ≈ 2.32 eV, full width at half maximum w ≈ 100 meV. The green peak shifted in the longwave direction with increasing temperature; the hνmax (T) dependence was linear with the slope of - 1.3x10-4 eV/K. Both the IEL intensity of the green peak at hνmax and band width w increased upon heating. The w(T) dependence was linear with the slope of 4.6x10-4 eV/K; intensity increased with the activation energy of 70 meV. The green IEL band can be considered to be due to the free exciton annihilation or to the band-band recombination and edge IEL increasing with rising temperature can be explained by the nonequilibrium charge carriers lifetime increasing.

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