Photoluminescence of Erbium-Diffused Silicon

1996 ◽  
Vol 422 ◽  
Author(s):  
H. Horiguchi ◽  
T. Kinone ◽  
R. Saito ◽  
T. Kimura ◽  
T. Ikoma
Keyword(s):  
Room Temperature ◽  
Crystalline Silicon ◽  
Luminescence Spectra ◽  
Main Peak ◽  
Silicon Substrates ◽  
Annealing Atmosphere ◽  
Full Width ◽  
Half Maximum ◽  
Strong Luminescence ◽  
Fine Structures

AbstractErbium films are evaporated on crystalline silicon substrates and are thermally diffused into silicon in an Ar+02 or H2 flow. Very sharp Er3+-related luminescence peaks are observed around 1.54 μ m.The main peak as well as the fine structures of the luminescence spectra depend on the annealing atmosphere, suggesting different luminescence centers. The full width at half maximum (FWHM) of the main peaks is ≤ 0.5nm at 20K. Thermal diffusion with Al films on top of the Er films is found to increase the intensity of the Er3+-related peaks greatly. The temperature dependence between 20 K and room temperature is relatively small, and a strong luminescence is obtained at room temperature.

scholarly journals Observation of strong excitonic magneto-chiral anisotropy in twisted bilayer van der Waals crystals

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Shoufeng Lan ◽  
Xiaoze Liu ◽  
Siqi Wang ◽  
Hanyu Zhu ◽  
Yawen Liu ◽  
...  
Keyword(s):  
Time Reversal ◽  
Room Temperature ◽  
Photochemical Reactions ◽  
Full Width ◽  
Half Maximum ◽  
A Value ◽  
Device Applications ◽  
Spectral Splitting ◽  
Iron Garnet ◽  
Spontaneous Magnetic Moment

AbstractThe interplay between chirality and magnetism generates a distinct physical process, the magneto-chiral effect, which enables one to develop functionalities that cannot be achieved solely by any of the two. Such a process is universal with the breaking of parity-inversion and time-reversal symmetry simultaneously. However, the magneto-chiral effect observed so far is weak when the matter responds to photons, electrons, or phonons. Here we report the first observation of strong magneto-chiral response to excitons in a twisted bilayer tungsten disulfide with the amplitude of excitonic magneto-chiral (ExMCh) anisotropy reaches a value of ~4%. We further found the ExMCh anisotropy features with a spectral splitting of ~7 nm, precisely the full-width at half maximum of the excitonic chirality spectrum. Without an externally applied strong magnetic field, the observed ExMCh effect with a spontaneous magnetic moment from the ferromagnetic substrate of thulium iron garnet at room temperature is favorable for device applications. The unique ExMCh processes provide a new pathway to actively control magneto-chiral applications in photochemical reactions, asymmetric synthesis, and drug delivery.

scholarly journals Nuclear pumping of I2 vapor in dense gases

1993 ◽  
Vol 11 (3) ◽  
pp. 499-508
Author(s):  
A.A. Mavlyutov ◽  
A.I. Mis'kevich ◽  
B.S. Salamakha
Keyword(s):  
Gas Mixtures ◽  
Inert Gas ◽  
Luminescence Spectra ◽  
Full Width ◽  
Half Maximum ◽  
Dense Gases ◽  
Atomic Lines ◽  
Α Particles

The luminescence spectra of dense inert gas mixtures with iodine vapors excited by α-particles of 238Pu and 239Pu sources were investigated from 200 to 1,000 nm. In luminescence spectra of He-I2, Ar-I2, and Kr-I2 mixtures besides atomic lines corresponding to (np-ns) transitions of inert gas atom (n = 4 and 5 for Ar and Kr, respectively) there exist 288-, 320-, 342-, and 500-nm iodine molecular bands. The 342-nm (D&3II2g - A&3II2u) band has the highest intensity in these spectra and the highest intensity in the Kr-I2mixture. The measured bandwidth of the 342-nm band is equal to 24 A (full width at half maximum). In the Xe-I2 spectrum, the 342-nm band does not exist but the 253-nm Xel* excimer band has the highest intensity in it. The measured bandwidth of the 253-nm band equals 27 Å.

scholarly journals Observation of strong excitonic magneto-chiral anisotropy in twisted bilayer van der Waals crystals

2020 ◽  
Author(s):  
Shoufeng Lan ◽  
Xiaoze Liu ◽  
Siqi Wang ◽  
Hanyu Zhu ◽  
Yawen Liu ◽  
...  
Keyword(s):  
Time Reversal ◽  
Room Temperature ◽  
Photochemical Reactions ◽  
Full Width ◽  
Half Maximum ◽  
A Value ◽  
Device Applications ◽  
Spectral Splitting ◽  
Iron Garnet ◽  
Spontaneous Magnetic Moment

Abstract The interplay between chirality and magnetism generates a distinct physical process, the magneto-chiral effect, which enables one to develop functionalities that cannot be achieved solely by any of the two. Such a process is universal with the breaking of parity-inversion and time-reversal symmetry simultaneously. However, the magneto-chiral effect observed so far is weak when the matter responds to photons, electrons, or phonons. Here we report the first observation of strong magneto-chiral response to excitons in a twisted bilayer tungsten disulfide with the amplitude of excitonic magneto-chiral (ExMCh) anisotropy reaches a value of ~4%. We further found the ExMCh anisotropy features with a spectral splitting of ~7 nm, precisely the full-width at half maximum of the excitonic chirality spectrum. Without an externally applied strong magnetic field, the observed ExMCh effect with a spontaneous magnetic moment from the ferromagnetic substrate of thulium iron garnet at room temperature is favorable for device applications. The unique ExMCh processes provide a new pathway to actively control magneto-chiral applications in photochemical reactions, asymmetric synthesis, and drug delivery.

Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure

2007 ◽  
Vol 556-557 ◽  
pp. 427-430 ◽  
Author(s):  
Anatoly M. Strel'chuk ◽  
Alexander A. Lebedev ◽  
N.S. Savkina ◽  
Alexey N. Kuznetsov
Keyword(s):  
Activation Energy ◽  
Emission Band ◽  
Room Temperature ◽  
Free Exciton ◽  
Charge Carriers ◽  
Full Width ◽  
Half Maximum ◽  
Exciton Annihilation ◽  
Increasing Temperature ◽  
Injection Electroluminescence

We present the injection electroluminescence spectra in the temperature range 290-760 K of 3C-SiC pn structure, which was fabricated by sublimation epitaxy in vacuum on 6H-SiC substrate. The dominant emission band of injection electroluminescence (IEL) spectrum was observed in the green region; at room temperature the IEL intensity outside the region of hν ≈ 2.0- 2.5 eV was less than 3% of that of the green peak. The peak parameters at room temperature are: hνmax ≈ 2.32 eV, full width at half maximum w ≈ 100 meV. The green peak shifted in the longwave direction with increasing temperature; the hνmax (T) dependence was linear with the slope of - 1.3x10-4 eV/K. Both the IEL intensity of the green peak at hνmax and band width w increased upon heating. The w(T) dependence was linear with the slope of 4.6x10-4 eV/K; intensity increased with the activation energy of 70 meV. The green IEL band can be considered to be due to the free exciton annihilation or to the band-band recombination and edge IEL increasing with rising temperature can be explained by the nonequilibrium charge carriers lifetime increasing.

Electrical Properties of Silicon Nitride Thin Films Fabricated by ECR PECVD at Room Temperature

1992 ◽  
Vol 284 ◽  
Author(s):  
Yoo-Chan Jeon ◽  
Hoyoung Lee ◽  
Seung-Ki Joo
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Electrical Properties ◽  
Room Temperature ◽  
Crystalline Silicon ◽  
Silicon Substrates ◽  
Trap States ◽  
Dominant Conduction Mechanism ◽  
Frenkel Emission ◽  
New Interpretation

ABSTRACTSilicon nitride thin films were deposited on single crystalline silicon substrates at room temperature by ECR PECVD with SiH4 and N2 as source gases and the electrical properties were analyzed. The dominant conduction mechanism in a high field was Poole-Frenkel emission. A ledge in I-V curve was observed in the first voltage ramp and it was found to originate from the field reduction at the injecting electrode due to the charge trapped in deep traps in the film. It also turned out that the ledge is a characteristic of monopolar conduction. A new interpretation of the current at low field — tunneling into trap states — was proposed and the current variations according to the field and temperature could be well explained.

CBE Growth of InP with Triethylindium and Metalorganic Phosphorous Precursors: Bisphosphinoethane and Tertiarybutyl-Phosphine

1992 ◽  
Vol 282 ◽  
Author(s):  
Albert Chin ◽  
Steve Hersee ◽  
Paul Martin ◽  
John Mazurowski ◽  
James Ballingall ◽  
...  
Keyword(s):  
Indium Phosphide ◽  
Room Temperature ◽  
Epitaxial Layers ◽  
Full Width ◽  
Half Maximum ◽  
Substrate Interface ◽  
Sims Analysis

ABSTRACTTwo metallorganic phosphorous precursors, bisphosphinoethane (BPE) and tertiarybutyl phosphine (TBP), were studied. For indium phosphide (InP) grown using BPE, the measured room temperature and 77K Hall mobilities were 4,200 and 22,000 cm2/Vs, with carrierdensities 5.7E15 and 4.0E15 cm−3, respectively. For InP grown using TBP, the measured room temperature and 77K Hall mobilities were 4,400 and 26,000 cm2/Vs, with carrier densities 6.4E15 and 5.1E15 cm−3, respectively. An impurity build-up at the substrate interface is responsible for the relatively low mobility in the adjacent epitaxial layers. SIMS analysis showed that S and Si are the primary impurities measured in films grown with BPE and TBP, respectively; impurity concentrations increasedwith cracking temperature. The full width at half maximum (FWHM) of donor bound exciton peaks measured by 2.2K photoluminescence for InP grown by BPE and TBP were 0.84 and 1.28 meV, respectively.

Photoluminescence Investigation of Surface Oxidation of C0.9Zn0.1 Te Detectors

1997 ◽  
Vol 487 ◽  
Author(s):  
H. Chen ◽  
M. Hayes ◽  
K. Chattopadhyay ◽  
K. T. Chen ◽  
A. Burger ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Surface Condition ◽  
Surface Oxidation ◽  
Main Peak ◽  
Etching Time ◽  
Full Width ◽  
Half Maximum ◽  
Detector Performance ◽  
Low Temperature Photoluminescence ◽  
Effect Of Surface

AbstractThe effect of surface oxidation of Cd1−xZnxTe (x = 0.1) detectors by chemical etching in hydrogen peroxide aqueous solution (H2O2) at different concentrations and etching times was investigated by low temperature photoluminescence (PL). The treatment resulted in better surface condition evidenced by the larger I(D0, X)/Idef intensity ratio and the narrower full width at half maximum of the main peak (D0, X). Peak shifts in the PL spectra associated with bound exciton lines and free to bound transition were also observed and attributed to the oxide layer. These surface effects were found to be dependent on H2O2 concentration and etching time. The significance of this surface oxidation on device passivation and the subsequent improvements in the detector performance are also discussed.

PL Properties of SiOx Obtained by HFCVD Technique

2010 ◽  
Vol 636-637 ◽  
pp. 444-449 ◽  
Author(s):  
T. Díaz-Becerril ◽  
G. García-Salgado ◽  
A. Coyopol ◽  
E. Rosendo-Andrés ◽  
H. Juárez
Keyword(s):  
Atomic Hydrogen ◽  
Room Temperature ◽  
Light Emission ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Visible Range ◽  
Silicon Substrates ◽  
Room Temperature Photoluminescence ◽  
Average Size ◽  
Hot Filament

In this work, SiOx films were deposited on crystalline silicon substrates and their microstructure and photoluminescent properties are reported. The films were deposited by the Hot Filament Chemical Vapor Deposition (HFCVD) technique using molecular hydrogen (H2) and silica glass (SiO2) as reactants. The H2 becomes atomic hydrogen when is flowed through a tungsten wire heated at 2000 °C. According to the chemical reaction, the atomic hydrogen reacts with the solid source (SiO2) and a SiOx film on a substrate is obtained. From FTIR and room temperature photoluminescence measurements can be concluded that, regions with different average size of silicon nano-clusters in the oxide are formed and they probably are the responsible for the light emission in the visible range.

Research of Angled 8° Integrated 808 nm Wavelength SLDs

2011 ◽  
Vol 84-85 ◽  
pp. 598-602
Author(s):  
Si Yu Zhang ◽  
Zhong Liang Qiao ◽  
Bao Xue Bo ◽  
Xin Gao ◽  
Yi Qu ◽  
...  
Keyword(s):  
Emission Spectrum ◽  
Output Power ◽  
Room Temperature ◽  
Continuous Wave ◽  
Seed Source ◽  
Full Width ◽  
Half Maximum

Integrated 808 nm wavelength super-luminescent diodes (SLDs) with a ring seed source and a tapered amplifier were fabricated tilted at 8° from the facet normal. Max-output power of 700 mW was obtained in continuous wave (CW) mode under room temperature, and the full width at half maximum (FWHM) of the emission spectrum is 36 nm.

Infrared luminescence properties of bismuth-doped barium silicate glasses

2007 ◽  
Vol 22 (7) ◽  
pp. 1954-1958 ◽  
Author(s):  
Jinjun Ren ◽  
Jianrong Qiu ◽  
Danping Chen ◽  
Chen Wang ◽  
Xiongwei Jiang ◽  
...  
Keyword(s):  
Fluorescence Intensity ◽  
Room Temperature ◽  
Full Width Half Maximum ◽  
Wavelength Region ◽  
Silicate Glasses ◽  
Full Width ◽  
Half Maximum ◽  
Infrared Luminescence ◽  
Barium Silicate ◽  
Luminescent Centers

Infrared (IR) luminescence covering 1.1 to ∼1.6 μm wavelength region was observed from bismuth-doped barium silicate glasses, excited by a laser diode at 808 nm wavelength region, at room temperature. The peak of the IR luminescence appears at 1325 nm. A full width half-maximum (FWHM) and the lifetime of the fluorescence is more than 200 nm and 400 μs, respectively. The fluorescence intensity increases with Al2O3 content, but decreases with BaO content. We suggest that the IR luminescence should be ascribed to the low valence state of bismuth Bi2+ or Bi+, and Al3+ ions play an indirect dispersing role for the infrared luminescent centers.

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