Comparison of Fe Catalyst Species in Chemical Mechanical Polishing Based on Fenton Reaction for SiC Wafer

2014 ◽  
Vol 1027 ◽  
pp. 171-176 ◽  
Author(s):  
Lei Wang ◽  
Qiu Sheng Yan ◽  
Jia Bin Lu ◽  
Xiao Lan Xiao
Keyword(s):  
Chemical Reaction ◽  
Chemical Mechanical Polishing ◽  
Fenton Reaction ◽  
Reaction Rate ◽  
Mechanical Polishing ◽  
Wafer Surface ◽  
Fe Catalyst ◽  
Fe Powder ◽  
Chemical Reaction Rate ◽  
Sic Wafer

Chemical reaction rate of SiC wafer surface usually determines the material removal rate (MRR) in chemical mechanical polishing (CMP). In this paper, systemic experiments are carried out to discover the relationship between Fe catalyst with different forms or valence and chemical reaction rate based on Fenton reaction. Experimental results show that the MRR changes little using Fe powder or hydrogen peroxide (H2O2) alone, but the MRR of SiC will increase largely by adding them both that will produce Fenton reaction. The MRR continues to increase slightly when Fe2+ ions is employ as catalyst, but that is much lower when utilizing Fe3+ ions. Moreover, SiC wafer with a smaller surface roughness and better quality can be obtained when using Fe powder as catalyst in Fenton reaction. The results indicate that the Fenton reaction can effectively improve the polishing efficiency of SiC substrate and Fe powder is more suitable for polishing of SiC than ferrous or ferric salt in CMP based on Fenton reaction.

Modeling and Analyzing on Nonuniformity of Material Removal in Chemical Mechanical Polishing of Silicon Wafer

2004 ◽  
Vol 471-472 ◽  
pp. 26-31 ◽  
Author(s):  
Jian Xiu Su ◽  
Dong Ming Guo ◽  
Ren Ke Kang ◽  
Zhu Ji Jin ◽  
X.J. Li ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Mechanical Polishing ◽  
Wafer Surface ◽  
Removal Mechanism ◽  
Particle Movement ◽  
Material Removal Mechanism ◽  
The Relationship ◽  
Nonuniform Material

Chemical mechanical polishing (CMP) has already become a mainstream technology in global planarization of wafer, but the mechanism of nonuniform material removal has not been revealed. In this paper, the calculation of particle movement tracks on wafer surface was conducted by the motion relationship between the wafer and the polishing pad on a large-sized single head CMP machine. Based on the distribution of particle tracks on wafer surface, the model for the within-wafer-nonuniformity (WIWNU) of material removal was put forward. By the calculation and analysis, the relationship between the motion variables of the CMP machine and the WIWNU of material removal on wafer surface had been derived. This model can be used not only for predicting the WIWNU, but also for providing theoretical guide to the design of CMP equipment, selecting the motion variables of CMP and further understanding the material removal mechanism in wafer CMP.

Measuring Surface Uniformity in Chemical Mechanical Polishing

2009 ◽  
Vol 76-78 ◽  
pp. 459-464
Author(s):  
Jae Won Baik ◽  
Chang Wook Kang
Keyword(s):  
Chemical Mechanical Polishing ◽  
Geometric Mean ◽  
Mechanical Polishing ◽  
Wafer Surface ◽  
Semiconductor Wafer ◽  
Statistical Process ◽  
Significant Step ◽  
The Difference ◽  
Thickness Variations ◽  
The Stability

Chemical mechanical polishing (CMP) is a technique used in semiconductor fabrication for planarizing the top surface of an in-process semiconductor wafer. Especially, Post-CMP thickness variations are known to have a severe impact on the stability of downstream processes and ultimately on device yield. Hence understanding how to quantify and characterize this non-uniformity is significant step towards statistical process control to achieve higher quality and enhanced productivity. The main reason is that the non-uniformed interface between the wafer and the machine-pad adversely affects the polishing performance and ultimate surface uniformity. The purpose of this paper is to suggest a new measure that estimates the uniformity of wafer surface considering the difference of the amount of abrasion between the center and the edge. This new measure which is called the Coefficient of Uniformity is defined as the following ratio: Geometric Mean (GM) / Arithmetic Mean (AM). This metric can be evaluated regionally to quantify the non-uniformity on the wafer surface from the center to the edge. Further simulations show that this new measure is insensitive to shift of the wafer center and sensitive to shift of the wafer edge. This trend indicates that this new measure is a very useful to test the non-uniformity of wafer after CMP polishing.

Diffusion and Mixing in Microchannel Analyzed by the Luminol Chemiluminescence

2013 ◽  
Author(s):  
Ruru Matsuo ◽  
Ryosuke Matsumoto
Keyword(s):  
Numerical Simulation ◽  
Chemical Reaction ◽  
Reaction Rate ◽  
Mixing Layer ◽  
Fluorescence Technique ◽  
Chemiluminescence Intensity ◽  
Luminol Chemiluminescence ◽  
Chemical Reaction Rate ◽  
Pdms Chip ◽  
Reaction Profile

This study focused on the diffusion and mixing phenomena investigated by using luminol chemiluminescence (CL) to estimate the local chemical reaction rate in the T-junction microchannel. Generally, the degree of mixing in microchannel is calculated by the deviation of the obtained concentration profiles from the uniform concentration profile by using fluorescence technique. Thus, the degree of mixing is a macroscopic estimate for the whole microchannel, which is inappropriate for understanding the diffusion and mixing phenomena in the mixing layer. In this study, the luminol CL reaction is applied to visualize the local chemical reaction and to estimate the local diffusion and mixing phenomena at an interface between two liquids in microchannel. Luminol emits blue chemiluminescence when it reacts with the hydrogen peroxide at the mixing layer. Experiments were carried out on the T-junction microchannel with 200 microns in width and 50 microns in depth casted in the PDMS chip. The chemiluminescence intensity profiles clearly show the mixing layer at an interface between two liquids. The experimental results are compared with the results of numerical simulation that involves solving the mass transport equations including the chemical reaction term. By calibrating CL intensity to the chemical reaction rate estimated by the numerical simulation, the local chemical reaction profile can be quantitatively estimated from the CL intensity profile.

Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001)

2008 ◽  
Vol 600-603 ◽  
pp. 831-834 ◽  
Author(s):  
Joon Ho An ◽  
Gi Sub Lee ◽  
Won Jae Lee ◽  
Byoung Chul Shin ◽  
Jung Doo Seo ◽  
...  
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Diamond Particles ◽  
Average Grain Size ◽  
Silica Slurry ◽  
Sic Wafer

2inch 6H-SiC (0001) wafers were sliced from the ingot grown by a conventional physical vapor transport (PVT) method using an abrasive multi-wire saw. While sliced SiC wafers lapped by a slurry with 1~9㎛ diamond particles had a mean height (Ra) value of 40nm, wafers after the final mechanical polishing using the slurry of 0.1㎛ diamond particles exhibited Ra of 4Å. In this study, we focused on investigation into the effect of the slurry type of chemical mechanical polishing (CMP) on the material removal rate of SiC materials and the change in surface roughness by adding abrasives and oxidizer to conventional KOH-based colloidal silica slurry. The nano-sized diamond slurry (average grain size of 25nm) added in KOH-based colloidal silica slurry resulted in a material removal rate (MRR) of 0.07mg/hr and the Ra of 1.811Å. The addition of oxidizer (NaOCl) in the nano-size diamond and KOH based colloidal silica slurry was proven to improve the CMP characteristics for SiC wafer, having a MRR of 0.3mg/hr and Ra of 1.087Å.

Sign in / Sign up

Export Citation Format

Share Document