Effects of Selenization Conditions on the Properties of Cu-In-Ga-Se Thin Films Prepared by Pulsed Laser Deposition

2015 ◽  
Vol 1102 ◽  
pp. 83-86 ◽  
Author(s):  
Lei Tang ◽  
Shui Yuan Chen ◽  
Hui Qin Zhang ◽  
Zhi Gao Huang
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Annealing Temperature ◽  
Synthesis Method ◽  
Pulsed Laser ◽  
Metal Films ◽  
Laser Deposition ◽  
Absorption Properties ◽  
Alternative Synthesis ◽  
Quartz Substrates

In this paper, Pulsed laser deposition (PLD) is attempted to be an alternative synthesis method for Cu-Ga-In (CIGS) thin films. Cu-In-Ga prefabricated metal films were grown on the quartz substrates by PLD method. Then the CIGS films with different Se content were synthesized by the post-selenization(Se)-annealing processes. The structure, element component proportion and optical properties of the CIGS films were investigated. The experimental results indicate that the CIGS films can be well obtained by the PLD method with Se-annealing. The performances of the CIGS films are much affect by the Se-annealing processes, including Se-annealing temperature, annealing time, and the way of Se-annealing. The CIGS films prepared by PLD method with Se-annealing present fine visible light absorption properties.

Pulsed laser deposition of oriented V2O5 thin films

2000 ◽  
Vol 15 (10) ◽  
pp. 2249-2265 ◽  
Author(s):  
Jeanne M. McGraw ◽  
John D. Perkins ◽  
Falah Hasoon ◽  
Philip A. Parilla ◽  
Chollada Warmsingh ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Glass Substrates ◽  
Wide Range ◽  
Phase Pure ◽  
Amorphous Quartz ◽  
Quartz Substrates

We have found that by varying only the substrate temperature and oxygen pressure five different crystallographic orientations of V2O5 thin films can be grown, ranging from amorphous to highly textured crystalline. Dense, phase-pure V2O5 thin films were grown on SnO2/glass substrates and amorphous quartz substrates by pulsed laser deposition over a wide range of temperatures and oxygen pressures. The films' microstructure, crystallinity, and texturing were characterized by electron microscopy, x-ray diffraction, and Raman spectroscopy. Temperature and oxygen pressure appeared to play more significant roles in the resulting crystallographic texture than did the choice of substrate. A growth map summarizes the results and delineates the temperature and O2 pressure window for growing dense, uniform, phase-pure V2O5 films.

Effect of Annealing on Structural and Optical Properties of Pulsed Laser Deposited Titanium Dioxide Thin Films

2009 ◽  
Vol 67 ◽  
pp. 65-70 ◽  
Author(s):  
Gaurav Shukla ◽  
Alika K. Khare
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Annealing Temperature ◽  
Ambient Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Tio2 Thin Films ◽  
Post Annealing ◽  
Post Annealing Temperature

TiO2 is a widely studied material for many important applications in areas such as environmental purification, photocatalyst, gas sensors, cancer therapy and high effect solar cell. However, investigations demonstrated that the properties and applications of titanium oxide films depend upon the nature of the crystalline phases present in the films, i.e. anatase and rutile phases. We report on the pulsed laser deposition of high quality TiO2 thin films. Pulsed Laser deposition of TiO2 thin films were performed in different ambient viz. oxygen, argon and vacuum, using a second harmonic of Nd:YAG laser of 6 ns pulse width. These deposited films of TiO2 were further annealed for 5hrs in air at different temperatures. TiO2 thin films were characterized using x-ray diffraction, SEM, photoluminescence, transmittance and reflectance. We observed effect of annealing over structural, morphological and optical properties of TiO2 thin films. The anatase phase of as-deposited TiO2 thin films is found to change into rutile phase with increased annealing temperature. Increase in crystalline behaviour of thin films with post-annealing temperature is also observed. Surface morphology of TiO2 thin films is dependent upon ambient pressure and post- annealing temperature. TiO2 thin films are found to be optically transparent with very low reflectivity hence will be suitable for antireflection coating applications.

Highly Conductive and Optically Transparent Polycrystalline Iridium Oxide Thin Films Grown by Reactive Pulsed Laser Deposition

1997 ◽  
Vol 472 ◽  
Author(s):  
M.A. El Khakani ◽  
M. Chaker
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Deposition Temperature ◽  
Room Temperature ◽  
Optical Transmission ◽  
Ambient Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Structure Morphology ◽  
Quartz Substrates

ABSTRACTReactive pulsed laser deposition has been used to deposit IrO2 thin films on both SiO2 and fused quartz substrates, by ablating a metal iridium target in oxygen atmosphere. At a KrF laser intensity of about 1.7 × 109 W/cm2, IrO2 films were deposited at substrate deposition temperatures ranging from room-temperature to 700 °C under an optimum oxygen ambient pressure of 200 mTorr. The structure, morphology, electrical resistivity and optical transmission of the deposited films were characterized as a function of their deposition temperature (Td). High quality IrO2 films are obtained in the 400–600 °C deposition temperature range. They are polycrystalline with preferred orientations, depending on the substrate, and show a dense granular morphology. At a Td as low as 400 °C, highly conductive IrO2 films with room-temperature resistivities as low as (42±6) μΩ cm are obtained. Over the 300–600 °C Td range, the IrO2 films were found to exhibit a maximum optical transmission at 450 °C (∼ 45 % at 500 nm for 80 nm-thick films).

Superconducting properties of YBCO thin films grown on [001] quartz substrates by pulsed laser deposition

2019 ◽  
Vol 562 ◽  
pp. 20-24 ◽  
Author(s):  
N.V. Porokhov ◽  
E.E. Levin ◽  
M.L. Chukharkin ◽  
A.S. Kalaboukhov ◽  
A.G. Maresov ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Superconducting Properties ◽  
Ybco Thin Films ◽  
Quartz Substrates

A STUDY ON STRUCTURAL AND OPTOELECTRONIC PROPERTIES OF ZnO FILM PREPARED BY PULSED LASER DEPOSITION ON Si(111) SUBSTRATES

2007 ◽  
Vol 21 (10) ◽  
pp. 1775-1785 ◽  
Author(s):  
XIAN-QI WEI ◽  
BAO-YUAN MAN ◽  
YU-TAI WANG ◽  
HUI-ZHAO ZHUANG
Keyword(s):  
Thin Films ◽  
Ir Spectra ◽  
Pulsed Laser Deposition ◽  
Annealing Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Zno Film ◽  
Post Annealing ◽  
Structural And Optoelectronic Properties

Zinc oxide (ZnO) thin films grown on Si (111) substrates by pulsed laser deposition at O 2 ambient pressure of 1.3 Pa at different deposition temperatures have been studied. ZnO thin films underwent annealing treatment after deposition. The structural and optoelectronic properties of deposited and annealed thin films have been characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), infrared absorption (IR) spectra, four-probe measurements and photoluminescence (PL) spectra. The XRD observation shows that the best crystalline quality of ZnO thin films with hexagonal structure are those grown at a temperature of 400°C and annealed at a temperature of 600°C, respectively. AFM results show that the surface roughness of the ZnO films can be decreased with increasing annealing temperature up to 600°C and then increased by further increasing the annealing temperature. The intense absorption peak sited at 417.54 cm-1 has been observed by IR spectra for ZnO film grown at 400°C and annealed at 600°C, and the property of absorption is improved by post-annealing. ZnO film grown at 400°C with a resistivity of 12.3 Ω· cm shows the best n-type semiconductor property. The PL spectra show the dominant increase in UV emission by annealing. It is concluded that the best post-annealing temperature is about 600°C.

Benefits of carbon addition on the hydrogen absorption properties of Mg-based thin films grown by Pulsed Laser Deposition

2006 ◽  
Vol 515 (4) ◽  
pp. 1299-1306 ◽  
Author(s):  
X. Darok ◽  
A. Rougier ◽  
V. Bhat ◽  
L. Aymard ◽  
L. Dupont ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Hydrogen Absorption ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Carbon Addition ◽  
Absorption Properties
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