Microstructure and Crystallization Mechanism of (GeSbSn)100-xFex Phase Change Optical Recording Films

2010 ◽  
Vol 123-125 ◽  
pp. 731-734
Author(s):  
Sin Liang Ou ◽  
Po Cheng Kuo ◽  
Shih Hsien Ma ◽  
Chih Long Shen ◽  
Don Yau Chiang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Phase Change ◽  
Silicon Wafer ◽  
Crystallization Kinetics ◽  
Glass Substrate ◽  
Optical Recording ◽  
Crystallization Mechanism ◽  
Dc Magnetron Sputtering ◽  
Protective Layers ◽  
Fe Addition

The (GeSbSn)100-xFex films (x = 0 ~ 12.9) were deposited on nature oxidized silicon wafer, and glass substrate by dc magnetron sputtering. The ZnS-SiO2 films were used as protective layers. The thickness of the (GeSbSn)100-xFex film is 100 nm. We have studied the effects of Fe addition on the crystallization kinetics, and microstructures of the GeSbSn recording film. The crystallization temperatures of (GeSbSn)100-xFex films with x = 0, 7.1, 9.1, and 12.9 were found to be 225 °C, 198 °C, 167 °C, and 165 °C, respectively. The crystallization activation energies of (GeSbSn)100-xFex films with x = 0, 7.1, 9.1, and 12.9 are about 1.74 eV, 1.15 eV, 0.81 eV, and 0.52 eV, respectively.

Bi-Ge-Sb-Te Films for Reversible Phase-Change Optical Recording

2006 ◽  
Vol 118 ◽  
pp. 293-298 ◽  
Author(s):  
Su Shia Lin
Keyword(s):  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Phase Change ◽  
High Speed ◽  
Optical Recording ◽  
Dc Magnetron Sputtering ◽  
Aging Test ◽  
Optical Disks ◽  
Reversible Phase

The Bi-Ge-Sb-Te phase-change recording films were prepared by DC magnetron sputtering of Bi5Ge9Sb68Te18 and Bi5Ge3Sb74Te18 targets, individually. The surface roughness of Bi5Ge9Sb68Te18 film was relatively low. At the recording speed of 27.92 m/s, the jitter value of Bi5Ge9Sb68Te18 disk was 21.33%, but Bi5Ge3Sb74Te18 disk could not be recorded. After the aging test, the reflectivity change (Rbef.−Raft.) of Bi5Ge9Sb68Te18 film was obviously less. It could be found that the Bi5Ge9Sb68Te18 film was suitable for high-speed recording and showed the better archival life stability. As the results, the recording performance and archival life stability of phase-change optical disks were dominated by the composition of recording film.

Crystallization Mechanism of Si/Cu100-xZrx Bilayer Film for Write-Once Blue Laser Optical Recording Media

2010 ◽  
Vol 123-125 ◽  
pp. 643-646
Author(s):  
Sin Liang Ou ◽  
Po Cheng Kuo ◽  
Chih Hsiang Hsiao ◽  
Don Yau Chiang ◽  
Chao Te Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Property ◽  
Magnetron Sputtering ◽  
Optical Recording ◽  
Crystallization Mechanism ◽  
Blue Laser ◽  
Bilayer Film ◽  
Recording Media ◽  
Protective Layers ◽  
Bilayer Films

Si/Cu100xZrx (x= 0~38.1) bilayer recording thin films were deposited on nature oxidized silicon wafer, and glass substrate by magnetron sputtering. The ZnS-SiO2 films were used as protective layers. We have studied the thermal property, optical property, and crystallization mechanism of the Si/Cu100-xZrx bilayer thin films. The optical contrasts of the Si/Cu100-xZrx (x= 0~38.1) bilayer films under 405 nm wavelength are all larger than 15%, and it reaches a high value of 40%, as x= 38.1. This indicates that the Si/Cu100-xZrx (x= 0~38.1) bilayer films are suitable for blue laser optical recording.

Characteristics of In-Ge-Sb-Sn-Te Thin Film Used for Phase Change Optical Recording Media

2011 ◽  
Vol 189-193 ◽  
pp. 4430-4433 ◽  
Author(s):  
Sin Liang Ou ◽  
Chin Pao Cheng ◽  
Chin Yen Yeh ◽  
Chung Jen Chung ◽  
Kuo Sheng Kao ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Optical Recording ◽  
Blue Laser ◽  
Recording Media ◽  
Dc Magnetron Sputtering ◽  
Structural And Optical Properties ◽  
Protective Layers ◽  
20 Nm

The In10GexSb52-xSn23Te15 films (x = 2, 5, and 9) were deposited on nature oxidized silicon wafer and glass substrate by dc magnetron sputtering. The ZnS-SiO2 films were used as protective layers. The thickness of the In10GexSb52-xSn23Te15 film is 20 nm. We have studied the crystallization kinetics, structural and optical properties of the In10GexSb52-xSn23Te15 (x = 2, 5, and 9) recording films. It is found that the crystallization temperature of the film is increased with increasing Ge content. The optical contrasts of In10GexSb52-xSn23Te15 films with x = 2~9 are all higher than 30 % at a wavelength of 405 nm, showing that the films are suitable for blue laser optical recording media application.

Structural, Morphological and Adhesion Properties of Cofeb Thin Films Deposited by DC Magnetron Sputtering

2013 ◽  
Vol 802 ◽  
pp. 47-52
Author(s):  
Chuleerat Ibuki ◽  
Rachasak Sakdanuphab
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Magnetron Sputtering ◽  
Crystalline Structure ◽  
Glass Substrate ◽  
Intrinsic Stress ◽  
Dc Magnetron Sputtering ◽  
Adhesion Properties ◽  
Sputtering Power

In this work the effects of amorphous (glass) and crystalline (Si) substrates on the structural, morphological and adhesion properties of CoFeB thin film deposited by DC Magnetron sputtering were investigated. It was found that the structure of a substrate affects to crystal formation, surface morphology and adhesion of CoFeB thin films. The X-Ray diffraction patterns reveal that as-deposited CoFeB thin film at low sputtering power was amorphous and would become crystal when the power increased. The increase in crystalline structure of CoFeB thin film is attributed to the crystalline substrate and the increase of kinetic energy of sputtering atoms. Atomic Force Microscopy images of CoFeB thin film clearly show that the roughness, grain size, and uniformity correlate to the sputtering power and the structure of substrate. The CoFeB thin film on glass substrate shows a smooth surface and a small grain size whereas the CoFeB thin film on Si substrate shows a rough surface and a slightly increases of grain size. Sticky Tape Test on CoFeB thin film deposited on glass substrate indicates the adhesion failure with a high sputtering power. The results suggest that the crystalline structure of substrate affects to the atomic bonding and the sputtering power affects to intrinsic stress of CoFeB thin film.

Stress and Adhesion Determination of a Wedged Iron Film System by Buckle Morphologies

2012 ◽  
Vol 457-458 ◽  
pp. 113-117
Author(s):  
Hong Zhou ◽  
Sen Jiang Yu ◽  
Yong Ju Zhang ◽  
Miao Gen Chen
Keyword(s):  
Magnetron Sputtering ◽  
Film Thickness ◽  
Glass Substrate ◽  
Silicone Oil ◽  
Adhesion Energy ◽  
Iron Film ◽  
Film System ◽  
Dc Magnetron Sputtering ◽  
Very High

By using the mobile property of silicone oil, a wedged iron (Fe) film system, deposited on glass substrate, has been prepared by dc-magnetron sputtering technique. The wedged Fe film is quenched by the silicone oil during deposition, and therefore contains a very high compressive stress, which is relieved by formation of a large number of telephone cord buckles. Both the buckle width l and maximum buckle deflection δ increase linearly with the film thickness, but the ratio of δ to l (l/δ ) decreases steadily. The internal stress and adhesion energy are estimated in the frame of continuum elastic theory.

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