Temperature-dependent interface characteristic of silicon wafer bonding based on an amorphous germanium layer deposited by DC-magnetron sputtering

The (GeSbSn)100-xFex films (x = 0 ~ 12.9) were deposited on nature oxidized silicon wafer, and glass substrate by dc magnetron sputtering. The ZnS-SiO2 films were used as protective layers. The thickness of the (GeSbSn)100-xFex film is 100 nm. We have studied the effects of Fe addition on the crystallization kinetics, and microstructures of the GeSbSn recording film. The crystallization temperatures of (GeSbSn)100-xFex films with x = 0, 7.1, 9.1, and 12.9 were found to be 225 °C, 198 °C, 167 °C, and 165 °C, respectively. The crystallization activation energies of (GeSbSn)100-xFex films with x = 0, 7.1, 9.1, and 12.9 are about 1.74 eV, 1.15 eV, 0.81 eV, and 0.52 eV, respectively.

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Characterisation and Optimisation of Indium Tin Oxide Films Deposited by Pulsed DC Magnetron Sputtering for Heterojunction Silicon Wafer Solar Cell Applications

Energy Procedia ◽

10.1016/j.egypro.2013.05.044 ◽

2013 ◽

Vol 33 ◽

pp. 91-98 ◽

Cited By ~ 9

Author(s):

Mei Huang ◽

Ziv Hameiri ◽

Selvaraj Venkataraj ◽

Armin G. Aberle ◽

Thomas Mueller

Keyword(s):

Solar Cell ◽

Magnetron Sputtering ◽

Silicon Wafer ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Oxide Films ◽

Dc Magnetron Sputtering ◽

Pulsed Dc ◽

Pulsed Dc Magnetron Sputtering ◽

Tin Oxide Films

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Optimization of the Broadband Reflectance of Graded Multilayers for Hard X-Ray Mirrors

MRS Proceedings ◽

10.1557/proc-586-105 ◽

1999 ◽

Vol 586 ◽

Author(s):

Adrian Ivana ◽

Ricardo Brunia ◽

Kyung Byuna ◽

Paul Gorensteina ◽

Suzanne Romaine

Keyword(s):

Magnetron Sputtering ◽

Silicon Wafer ◽

Interface Roughness ◽

Multilayer Structures ◽

X Rays ◽

Dc Magnetron Sputtering ◽

Multilayer Systems ◽

X Ray ◽

Optimization Study ◽

Broad Energy

ABSTRACTMultilayer structures with depth graded spacing can present a high reflectivity in a broad energy bandpass for hard X-rays (>20 keV) if the interface roughness/diffuseness is controlled and minimized. We present an optimization study of several multilayer systems deposited by DC magnetron sputtering on <111> silicon wafer substrates. The material combinations presented in this work are W/Si, W/C, Wsi2/Si, Pt/C, Ni/C, and Mo/Si.

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Effect of Sputtering Pressure on Al-doped ZnO Films by DC Magnetron Sputtering

Journal of Inorganic Materials ◽

10.3724/sp.j.1077.2012.12213 ◽

2013 ◽

Vol 27 (10) ◽

pp. 1112-1116 ◽

Cited By ~ 2

Author(s):

Ke-Wei SUN ◽

Wan-Cheng ZHOU ◽

Shan-Shan HUANG ◽

Xiu-Feng TANG

Keyword(s):

Magnetron Sputtering ◽

Zno Films ◽

Dc Magnetron Sputtering ◽

Doped Zno ◽

Sputtering Pressure

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Structure and Optical Properties CdS and CdTe Films on Flexible Substrate Obtained by DC Magnetron Sputtering for Solar Cells

Journal of Nano- and Electronic Physics ◽

10.21272/jnep.9(5).05035 ◽

2017 ◽

Vol 9 (5) ◽

pp. 05035-1-05035-6 ◽

Cited By ~ 3

Author(s):

G. I. Kopach ◽

◽

R. P. Mygushchenko ◽

G. S. Khrypunov ◽

A. I. Dobrozhan ◽

...

Keyword(s):

Optical Properties ◽

Solar Cells ◽

Magnetron Sputtering ◽

Flexible Substrate ◽

Dc Magnetron Sputtering ◽

Cdte Films

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Process control for low temperature reactive deposition of Al doped ZnO films by ICP-assisted DC magnetron sputtering

Surface and Coatings Technology ◽

10.1016/j.surfcoat.2005.02.207 ◽

2005 ◽

Vol 200 (1-4) ◽

pp. 862-866 ◽

Cited By ~ 15

Author(s):

S.J. Jung ◽

B.M. Koo ◽

Y.H. Han ◽

J.J. Lee ◽

J.H. Joo

Keyword(s):

Low Temperature ◽

Process Control ◽

Magnetron Sputtering ◽

Zno Films ◽

Dc Magnetron Sputtering ◽

Reactive Deposition ◽

Doped Zno

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Preparing transparent cobalt-doped ZnO thin films by DC magnetron sputtering

Materials Today Proceedings ◽

10.1016/j.matpr.2017.06.132 ◽

2017 ◽

Vol 4 (5) ◽

pp. 6311-6316 ◽

Cited By ~ 1

Author(s):

Pongladda Panyajirawut ◽

Nattha Pratumsuwan ◽

Kornkamon Meesombad ◽

Kridsana Thanawattana ◽

Artit Chingsungnoen ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Zno Thin Films ◽

Dc Magnetron Sputtering ◽

Doped Zno

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Black TiOx Films with Photothermal-Assisted Photocatalytic Activity Prepared by Reactive Sputtering

Materials ◽

10.3390/ma14102508 ◽

2021 ◽

Vol 14 (10) ◽

pp. 2508

Author(s):

Quan Mao ◽

Meng Liu ◽

Yajie Li ◽

Yuquan Wei ◽

Yong Yang ◽

...

Keyword(s):

Photocatalytic Activity ◽

Magnetron Sputtering ◽

High Light ◽

Chemical Compositions ◽

Practical Application ◽

Dc Magnetron Sputtering ◽

Optical Absorbance ◽

Low Efficiency ◽

Tio2 Phase ◽

Photocatalytic Tio2

Titanium oxide is widely applied as a photocatalyst. However, its low efficiency and narrow light absorption range are two main disadvantages that severely impede its practical application. In this work, black TiOx films with different chemical compositions were fabricated by tuning target voltage and controlling O2 flow during reactive DC magnetron sputtering. The optimized TiOx films with mixed phases (TiO, Ti2O3, Ti3O5, and TiO2) exhibited fantastic photothermal and photocatalytic activity by combining high light-absorptive Ti2O3 and Ti3O5 phases with the photocatalytic TiO2 phase. The sample prepared with oxygen flow at 5.6 ± 0.2 sccm and target voltage near 400 V exhibited excellent optical absorbance of 89.29% under visible light, which could improve surface temperature to 114 °C under sunlight. This film could degrade Rhodamine-B up to 74% after 150 min of UV irradiation. In a word, this work provides a guideline for fabricating black TiOx films with photothermal-assisted photocatalytic activity by reactive DC magnetron sputtering, which could avoid the usage of hydrogen and is convenient for quantity preparation.

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