Investigation of Microstructure, Electrical and Optical Properties of WO3 Film by RF Magnetron Sputtering with Ar/H2

2010 ◽  
Vol 123-125 ◽  
pp. 983-986 ◽  
Author(s):  
Chao Te Lee ◽  
Po Kai Chiu ◽  
C.N. Hsiao ◽  
C.L. Huang ◽  
Tao Lian Chuang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
Sputtering Deposition ◽  
X Ray ◽  
Average Transmittance

WO3 thin film was prepared on glass substrate at room temperature by RF magnetron sputtering deposition with hybrid (Ar+2.5% H2) gas. Effects of RF power on the microstructure, electrical and optical properties of WO3 films are investigated by field emission scanning electron microscopy, X-ray diffraction, Hall measurement and spectrometer. X-ray diffraction analysis reveals that all of the films are amorphous. The minimum resistivity of the WO3 film prepared with RF 70W is 5.74 × 10-3 -cm. The average transmittance in the visible region was decreased with increased RF power from 50W to 150W. The average transmittance was lower than 15% with RF 50W. The electrical and optical mechanisms have been explained in terms of composition and film thickness were changed with RF power.

Electrical and Optical Properties of ZnO-Doped Zr0.8Sn0.2TiO4 Thin Films on ITO/Glass Substrates by RF Magnetron Sputtering

2011 ◽  
Vol 687 ◽  
pp. 70-74
Author(s):  
Cheng Hsing Hsu ◽  
His Wen Yang ◽  
Jenn Sen Lin
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
Electrical And Optical Properties ◽  
Glass Substrates ◽  
Ito Glass

Electrical and optical properties of 1wt% ZnO-doped (Zr0.8Sn0.2)TiO4thin films prepared by rf magnetron sputtering on ITO/Glass substrates at different rf power and substrate temperature were investigated. The surface structural and morphological characteristics analyzed by X-ray diffraction (XRD) and atomic force microscope (AFM) were found to be sensitive to the deposition conditions, such as rf power and substrate temperature. The selected-area diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. All films exhibited ZST (111) orientation perpendicular to the substrate surface and the grain size as well as the deposition rate of the film increased with the increase in both the rf power and the substrate temperature. Optical transmittance spectroscopy further revealed high transparency (over 60%) in the visible region of the spectrum.

INFLUENCE OF SUBSTRATE TEMPERATURE ON STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF ITO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING

2013 ◽  
Vol 20 (05) ◽  
pp. 1350045 ◽  
Author(s):  
BO HE ◽  
LEI ZHAO ◽  
JING XU ◽  
HUAIZHONG XING ◽  
SHAOLIN XUE ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Electrical And Optical Properties ◽  
High Quantum Efficiency ◽  
Ito Thin Films ◽  
Ito Films

In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at various substrate temperatures were investigated. The results indicate the grain size increases with substrate temperature increases. As the substrate temperature grew up, the resistivity of ITO films greatly decreased. The ITO film possesses high quality in terms of electrode functions, when substrate temperature is 480°C. The resistivity is as low as 9.42 × 10-5 Ω• cm , while the carrier concentration and mobility are as high as 3.461 × 1021 atom∕cm3 and 19.1 cm2∕V⋅s, respectively. The average transmittance of the film is about 95% in the visible region. The novel ITO/np-Silicon frame, which prepared by RF magnetron sputtering at 480°C substrate temperature, can be used not only for low-cost solar cell, but also for high quantum efficiency of UV and visible lights enhanced photodetector for various applications.

Investigation of Nanostructure and Optical Properties of Flexible AZO Thin Films at Different Powers of RF Magnetron Sputtering

NANO ◽  
2018 ◽  
Vol 13 (06) ◽  
pp. 1850062 ◽  
Author(s):  
Sh. Khatami ◽  
L. Fekri Aval ◽  
G. Behzadi Pour
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Light Emitting ◽  
Structure Morphology ◽  
Xrd Patterns ◽  
Predominant Direction

In this study Al-doped Zinc Oxide (AZO) thin films were successfully deposited on the flexible Polymethyl methacrylate (PMMA) substrate by RF magnetron sputtering. The effects of RF power on the crystal structure, morphology, thickness and optical properties of AZO thin films have been investigated. The AZO thin films were analyzed using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), DEKTAK 3 profilometer, UV–Visible spectroscopy and room temperature photoluminescence (PL) spectroscopy. The XRD patterns show that increase of RF power leads to increase in the predominant direction along (100) and crystal plane of hexagonal ZnO. Moreover, the transmittance of thin films decreased from 76% to 61% and optical bang gap varied among 3.34[Formula: see text]eV to 3.22[Formula: see text]eV with increasing RF power. The PL spectra show excellent light-emitting characteristics: 375[Formula: see text]nm, 428[Formula: see text]nm, 467[Formula: see text]nm and 505[Formula: see text]nm. The results indicate that the peak intensity increases with increasing RF power from 80[Formula: see text]W to 180[Formula: see text]W.

Effects of Deposition Temperatures on ZnO:Al Films Deposited on Polymer Substrates by RF Magnetron Sputtering

2011 ◽  
Vol 415-417 ◽  
pp. 1871-1874
Author(s):  
Xiao Jing Wang ◽  
De Jun Li ◽  
Huan Qi Tao ◽  
Jun Wang
Keyword(s):  
Magnetron Sputtering ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Structure And Properties ◽  
Scanning Electronic Microscopy ◽  
Electronic Microscopy ◽  
Polymer Substrates ◽  
X Ray ◽  
Average Transmittance ◽  
Uv Visible

Aluminium doped ZnO (ZnO:Al) films were deposited on polymer substrates by RF magnetron sputtering. The effects of deposition temperatures on structure and properties of films were investigated by X-ray diffractometery, Scanning electronic microscopy, UV-visible spectrophotometer, as well as Four-point Probes System. The results revealed that moderate deposition temperature was helpful to improve the crystal quality and optoelectronic properties of ZnO:Al films. The lowest resistivity of 9.5×10-3Ω•cm and the average transmittance of 76% in the visible region was obtained for the film deposited from ZnO:2wt% Al2O3 target at 75°C.

Effects of Annealing Temperature on Optical Properties of Bi3.4Nd0.6Ti3O12 Films by RF Magnetron Sputtering Method

2012 ◽  
Vol 503-504 ◽  
pp. 620-624
Author(s):  
Yan Zou ◽  
Qiu Xiang Liu ◽  
Yan Ping Jiang ◽  
Xin Gui Tang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Band Gap ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
Constant Thickness ◽  
X Ray Diffraction ◽  
X Ray ◽  
Annealing Temperatures

Bi3.4Nd0.6Ti3O12 (BNT) thin films have been prepared on Si (100) substrate by RF magnetron sputtering method. The crystalline structures were studied by X-ray diffraction. The surface of the films have been observed by SEM. The reflectivity was measured by n & k Analyzer 2000 with the wavelength from 190 to 900 nm. The optical constant, thickness and the forbidden band gap were fitted. The results showed that with the annealing temperatures raised from 600 to 750 °C, the reflectivity index decreased from 2.224 to 2.039, and the forbidden band gap decreased from 3.19 to 2.99 eV. The possible mechanism of the effect of annealing temperature on the optical properties was discussed.

Influence of Ammoniating Temperatures on Microstructures, Morphologies and Optical Properties of GaN/Nb Nanostructures by RF Magnetron Sputtering Technique

2012 ◽  
Vol 1439 ◽  
pp. 17-23
Author(s):  
Feng Shi ◽  
Chengshan Xue
Keyword(s):  
Electron Microscopy ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Hexagonal Wurtzite Structure ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gan Nanowires ◽  
Transmission Electron

AbstractGaN nanowires and nanorods have been successfully synthesized on Si (111) substrates by magnetron sputtering through ammoniating Ga2O3/Nb thin films and the effects of ammoniation temperatures on growth of GaN nanowires and nanorods were analyzed in detail. X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, high-resolution transmission electron microscopy, and photoluminescence spectra were carried out to characterize microstructures, morphologies, and optical properties of GaN samples. The results demonstrate that sample after ammoniation at 950 °C is single crystal GaN with hexagonal wurtzite structure and high crystalline quality, having the size of 30 - 80 nm in diameter. After ammoniation at 1000 °C, GaN nanorods appear with smooth and clean surface and more than 100 nm in diameter. The optical properties of GaN nanowires grown at 950 °C and nanorods grown at 1000 °C are best with strong emission intensities.

Growth Conditions Effect on the Structure and Optical Properties of ZnO Thin Films Synthesized by rf magnetron Sputtering

2009 ◽  
Vol 1165 ◽  
Author(s):  
Luis Angelats-Silva ◽  
Maharaj S. Tomar ◽  
Oscar Perales-Perez ◽  
S. P. Singh ◽  
Segundo R. Jauregui-Rosas
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Growth Conditions ◽  
Zno Thin Films ◽  
Zno Films ◽  
Rf Power ◽  
Substrate Distance

AbstractWe report a systematic study of the influence of the target-substrate distance and rf power on the structural and optical properties of ZnO thin films grown by rf magnetron sputtering in Ar atmosphere from ZnO sputtering target. Sharp (002) peak showed by XRD indicates a c-axis crystalline growth of ZnO films. Growth rate remained almost constant for short target-substrate distances. However, the grain size increases with the rf power decreasing the compressive stress in ZnO films. As-grown ZnO films have average transmittance more than 80% in the visible region. Optical bandgap (Eg) increases from 3.18 to 3.27 eV as increase the target-substrate distance probably due to low stress compression in ZnO films. In addition, when rf power is above 100 W, the optical band gap increases as increase of the stress compression.

Substrate Temperature and La0.9Sr0.1Ga0.8Mg0.2O3-δ Electrolyte Film Growth by Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 833 ◽  
pp. 127-133
Author(s):  
Jie Yu ◽  
Jie Xing ◽  
Xiu Hua Chen ◽  
Wen Hui Ma ◽  
Rui Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Radio Frequency ◽  
Film Growth ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrolyte Film ◽  
Porous Anode

La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) electrolyte thin films were fabricated on La0.7Sr0.3Cr0.5Mn0.5O2.75 (LSCM) porous anode substrates by Radio Frequency (RF) magnetron sputtering method. The compatibility between LSGM and LSCM was examined. Microstructures of LSGM thin films fabricated were observed by scanning electron microscope (SEM). The effect of substrate temperature on LSGM thin films was clarified by X-ray Diffraction (XRD). Deposition rate increases firstly at the range of 50°C~150°C, and then decreases at the range of 150°C ~300°C. After annealing, perovskite structure with the same growth orientation forms at different substrate temperature. Crystallite size decreases at first, to the minimum point at 150°C, then increases as substrate temperature rises.

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