Experimental Investigation on Effects of Passivants in the Abrasive-Free Polishing of Copper Film

2010 ◽  
Vol 126-128 ◽  
pp. 316-319
Author(s):  
Jhy Cherng Tsai ◽  
Wei Ching Lin
Keyword(s):  
Experimental Data ◽  
Experimental Investigation ◽  
Citric Acid ◽  
Material Removal Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Copper Film ◽  
Copper Base ◽  
Polishing Pressure ◽  
Better Than

Abrasive Free Polishing (AFP) is a polishing technology without abrasives and widely employed in copper-base semiconductor fabrications. This paper investigates the effect of passivants, added to the slurry, on the material removal rate (MRR) and the non-uniformity (NU) via experiments. Two kinds of passivants, Benzotriazole (BTA) and citric acid (CA) are added to the slurry for the experiments. Experimental results showed that the MRR increases when polishing pressure increases while NU decreases at the same time. Both MRR and NU tends to increase when rotational speed increases, though MRR and NU at 40 rpm are lower than that at 30 and 50 rpm in the slurry with CA. Experimental data also showed that AFP using the slurry with CA performs better than that with BTA.

Experimental Investigation of Pressure and Velocity on Chemical Mechanical Planarization

2000 ◽  
Author(s):  
Jhy-Cherng Tsai ◽  
Mingyi Tsai
Keyword(s):  
Experimental Investigation ◽  
Taguchi Method ◽  
Material Removal Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Theoretical Models ◽  
Back Pressure ◽  
Wear Model ◽  
Polishing Pressure

Abstract Chemical-mechanical planarization or polishing (CMP) is an emerging process used in surface planarization and polishing for semiconducter wafer with multilevel interconnections. This paper investigates the effects of polishing pressure and velocity on the material removal rate (RR) and the non-uniformity (NU) in the CMP process. Wear models for CMP process from mechanical aspect, including abrasive-based model and flow-based model, are first discussed. Experiments using different polishing pressures, velocities, and back pressures are then designed and conducted based on the Taguchi method. Experimental results showed that RR and NU are consistent with theoretical models in a certain range. Both RR and NU increase as polishing speed increases. As RR and NU also increase with the polishing pressure at low pressure, their values become saturated and then decrease when the pressure exceeds certain value. It further verified that NU can be improved using proper back pressure as predicted by the flow-based wear model.

Study on Chemical Mechanical Polishing Removal Mechanism of Monocrystalline Silicon

2014 ◽  
Vol 538 ◽  
pp. 40-43
Author(s):  
Hong Wei Du ◽  
Yan Ni Chen
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Silicon Wafers ◽  
Monocrystalline Silicon ◽  
Mechanical Polishing ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Polishing Pressure

In this paper, material removal mechanism of monocrystalline silicon by chemical etching with different solutions were studied to find effective oxidant and stabilizer. Material removal mechanism by mechanical loads was analyzed based on the measured acoustic signals in the scratching processes and the observation on the scratched surfaces of silicon wafers. The chemical mechanical polishing (CMP) processes of monocrystalline silicon wafers were analyzed in detail according to the observation and measurement of the polished surfaces with XRD. The results show that H2O2 is effective oxidant and KOH stabilizer. In a certain range, the higher concentration of oxidant, the higher material removal rate; the higher the polishing liquid PH value, the higher material removal rate. The polishing pressure is an important factor to obtain ultra-smooth surface without damage. Experimental results obtained silicon polishing pressure shall not exceed 42.5kPa.

The Experimental Investigation of Stone Wear in Honing

2011 ◽  
Vol 487 ◽  
pp. 462-467 ◽  
Author(s):  
Qian Wang ◽  
Qiang Feng ◽  
Q.F. Li ◽  
Cheng Zu Ren
Keyword(s):  
Experimental Investigation ◽  
Material Removal Rate ◽  
Wear Mechanism ◽  
Material Removal ◽  
Removal Rate ◽  
Rotary Motion ◽  
Two Factors

Honing is a finishing method by means of rotary motion and alternate motion between the honing stones assembled on the honing head and the workpiece. In honing process, the honing stone status is varying all the time and plays important role in cutting property. This paper analyzes the wear mechanism and the cutting property by cylindrical honing experiments. The wear mechanism is analyzed by the topography obtained by a microscope and the cutting property was investigated by two factors: material removal rate and honing force.

Study on Chemical Mechanical Polishing Parameters of 6H-SiC Crystal Substrate Based on Diamond Abrasive

2013 ◽  
Vol 797 ◽  
pp. 261-265 ◽  
Author(s):  
Jian Xiu Su ◽  
Zhu Qing Zhang ◽  
Jian Guo Yao ◽  
Li Jie Ma ◽  
Qi Gao Feng
Keyword(s):  
Surface Roughness ◽  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Rotational Velocity ◽  
Crystal Substrate ◽  
Polishing Pressure ◽  
Diamond Abrasive ◽  
Abrasive Size

In this paper, according to the slurry ingredients obtained by former research, the influences of the chemical mechanical polishing (CMP) process parameters, such as the rotational velocity of the platen and the carrier, the polishing pressure and the abrasive size on the material removal rate (MRR) and surface roughness Ra have been studied in CMP SiC crystal substrate (0001) C and (0001) Si surface based on the diamond abrasive. The research results show that the material removal rate changes with the change of the abrasive size, the rotational velocity of the platen and the polishing pressure significantly, but the maximum of MRR can be obtained at a certain rotational velocity of platen, abrasive size and polishing pressure. The influence of the abrasive size, the platen velocity, the carrier velocity and the polishing pressure on surface roughness is no significant. Under the same conditions, the MRR of CMP the Si surface is larger than that of the C surface. This study results will provide the reference for optimizing the process parameters and researching the material removal mechanism in CMP SiC crystal substrate.

Study on Precision Polishing of a Mini Roller Mold

2010 ◽  
Vol 126-128 ◽  
pp. 551-556
Author(s):  
Choung Lii Chao ◽  
Ying Ching Hsiao ◽  
Wen Chen Chou ◽  
Chia Wei Kuo ◽  
Wen Lang Lai ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Material Removal Rate ◽  
Surface Finish ◽  
Empirical Model ◽  
Material Removal ◽  
Removal Rate ◽  
Surface Condition ◽  
Microscopic Analysis ◽  
Semi Empirical ◽  
Better Than

This research aimed to design and develop a polishing system for precision polishing mini roller mold to nanometer surface finish. An experimental polishing system was built in the present study to polish nickel plated specimens with various polishing compounds. The polished specimens were subsequently examined by Alfa-step, OM and SEM for surface finish, morphology and microscopic analysis respectively. The obtained surface condition and material removal rate were correlated to the polishing parameters such as spindle speed, abrasive concentration, and abrasive grit size for the improvement of the polishing effect. Mini-rollers of 5mm in diameter, 50mm in length were successfully polished to a surface roughness better than 2nm Ra in several hours without damaging the roundness and cylindricalness using abrasive of 0.3μm, 10,000rpm polishing speed and 0.5mm gap distance between polisher and the specimen. A semi-empirical model of polishing was also developed in the study for predicting the materials removal rate.

Study on Material Removal Rate of CMP 6H-SiC Crystal Substrate (0001) C Surface Based on Abrasive Alumina (Al2O3)

2012 ◽  
Vol 497 ◽  
pp. 250-255
Author(s):  
Jian Xiu Su ◽  
Jia Xi Du ◽  
Xing Long Liu ◽  
Hai Na Liu
Keyword(s):  
Integrated Circuits ◽  
Material Removal Rate ◽  
Material Removal ◽  
Ph Value ◽  
Removal Rate ◽  
Study Results ◽  
Crystal Substrate ◽  
Slurry Composition ◽  
Polishing Pressure ◽  
Abrasive Size

SiC crystal substrate has been widely used in the area of microelectronics, photonics and new materials, such as semiconductor lighting, integrated circuits, and so on. In this paper, the influences of the polishing slurry composition, such as the pH value, the abrasive size and its concentration, the dispersant and the oxidants, the rotational speed of the polishing platen and the workpiece and the polishing pressure on the material removal rate (MRR) of SiC crystal substrate (0001) C surface based on the alumina abrasive in chemical mechanical polishing (CMP). This study results will provide the reference for developing the slurry, optimizing the process parameters and researching the material removal mechanism in CMP of SiC crystal substrate.

scholarly journals Experimental Investigation of the Effect of Process Parameters on Material Removal Rate and Surface Finish

2020 ◽  
pp. 46-50
Author(s):  
S. Sudharsan
Keyword(s):  
Experimental Investigation ◽  
Process Parameters ◽  
Material Removal Rate ◽  
Surface Finish ◽  
Material Removal ◽  
Removal Rate ◽  
Optimum Combination ◽  
Taguchi Design Of Experiments ◽  
Finishing Process ◽  
Series Of Experiments

Lapping is a finishing process used especially for removing the material, achieving finer surfaces, correcting minor imperfections and maintaining close tolerances. This process may takes place due to the relative motion between the work material, slurry and lapping plate. This study is done by conducting a series of experiments based on taguchi design of experiments and calculating material removal rate and surface roughness. This study explains about effect of the parameters on material removal rate and surface finish. The final step of this process is to find out the optimum combination of process parameters to determine the material removal rate and the surface finish.

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