First-Principles Calculations of Transition Metal Nitrides TiN and NbN

2010 ◽  
Vol 150-151 ◽  
pp. 174-177 ◽  
Author(s):  
F.Y. Xue ◽  
H.Y. Wang ◽  
Nai Hui Zhao ◽  
De Jun Li
Keyword(s):  
Density Of States ◽  
First Principles ◽  
Density Functional ◽  
Density Functional Theory Method ◽  
First Principles Calculations ◽  
Transition Metal Nitrides ◽  
Functional Theory ◽  
Pseudopotential Calculations ◽  
Theoretical Results ◽  
Good Agreement

First-principles study of elastic modulus, shear modulus and some other elastic parameters of TiN and NbN are reported using the plane-wave pseudopotential density functional theory method in this paper. The calculated lattice and elastic constants are in good agreement with the experimental data and other theoretical results. The band structure and density of states of these two compounds were obtained, which show that the mainly contribution on pseudopotential calculations of the density of states of TiN is Ti-3d orbital and N-2p orbital, while TiN is the Nb-4d orbit and B-2p orbit, TiN with higher conductivity; Pugh empirical criterion shows that TiN and NbN are both brittle compounds, and NbN is more brittle than TiN.

Electronic structure of cubic BaTbO3 from first-principles pseudopotential calculations

2006 ◽  
Vol 84 (2) ◽  
pp. 115-120 ◽  
Author(s):  
G Y Gao ◽  
K L Yao ◽  
Z L Liu
Keyword(s):  
Electronic Structure ◽  
First Principles ◽  
Density Functional ◽  
First Principles Calculations ◽  
Generalized Gradient ◽  
Functional Theory ◽  
Exchange Correlation ◽  
Pseudopotential Calculations ◽  
Correlation Potential ◽  
Density Contour

First-principles calculations of the electronic structure are performed for cubic BaTbO3 using the plane-wave pseudopotential method within the framework of density functional theory and using the generalized gradient approximation for the exchange-correlation potential. Our calculations show that cubic BaTbO3 is metallic, and that this metallic character is mainly governed by the Tb 4f electrons and the hybridization between the Tb 5d and O 2p states. From the analysis of the density of states, band structure, and charge density contour, we find that the chemical bonding between Tb and O is covalent while that between Ba and TbO3 is ionic. PACS Nos.: 71.15.Mb, 71.20.-b

scholarly journals Effect of Doping on the Thermoelectric Properties of Thallium Tellurides Using First Principles Calculations

2011 ◽  
Vol 172-174 ◽  
pp. 985-989 ◽  
Author(s):  
Philippe Jund ◽  
Xiao Ma Tao ◽  
Romain Viennois ◽  
Jean Claude Tédenac
Keyword(s):  
Experimental Data ◽  
Thermoelectric Properties ◽  
First Principles ◽  
Density Functional ◽  
First Principles Calculations ◽  
Pure Compound ◽  
Functional Theory ◽  
Lattice Constants ◽  
Thallium Tellurides ◽  
Good Agreement

We present a study of the electronic properties of Tl5Te3, BiTl9Te6and SbTl9Te6compounds by means of density functional theory based calculations. The optimized lattice constants of the compounds are in good agreement with the experimental data. The band gap of BiTl9Te6and SbTl9Te6compounds are found to be equal to 0.589 eV and 0.538 eV, respectively and are in agreement with the available experimental data. To compare the thermoelectric properties of the different compounds we calculate their thermopower using Mott’s law and show, as expected experimentally, that the substituted tellurides have much better thermoelectric properties compared to the pure compound.

Theoretical calculations of stability, mechanical and thermodynamic properties of IVA group Willemite-II nitrides

2015 ◽  
Vol 14 (04) ◽  
pp. 1550024 ◽  
Author(s):  
Ying-Chun Ding ◽  
Min Chen ◽  
Wen-Juan Wu
Keyword(s):  
Experimental Data ◽  
Thermodynamic Properties ◽  
First Principles ◽  
Density Functional ◽  
Theoretical Calculations ◽  
Mechanical Anisotropy ◽  
First Principles Calculations ◽  
Functional Theory ◽  
The Density Functional Theory ◽  
Good Agreement

The structural stability and mechanical and thermodynamic properties of WII- A 3 N 4 ( A=C , Si , Ge and Sn ) are calculated by first-principles calculations based on the density functional theory. The calculated lattice parameters and elastic constants of WII- A 3 N 4 ( A=C , Si , Ge and Sn ) are in good agreement with the experimental data and previously calculated values. WII- A 3 N 4 ( A=C , Si , Ge and Sn ) compounds are also found to be thermodynamically and mechanically stable. The results suggest that hardness of WII- C 3 N 4 is the hardest of these C 3 N 4 polymorphs. The hardness of WII- Sn 3 N 4 is the smallest among WII- A 3 N 4 ( A=C , Si , Ge and Sn ). Furthermore, the mechanical anisotropy, Debye temperature, the minimum thermal conductivity and thermodynamic properties of WII- A 3 N 4 ( A=C , Si , Ge and Sn ) compounds can be investigated.

Electronic structure and elastic properties of AgZn under pressure from first-principles calculations

2016 ◽  
Vol 94 (3) ◽  
pp. 328-333
Author(s):  
Yasemin Ö. Çiftci
Keyword(s):  
Density Of States ◽  
First Principles ◽  
Density Functional ◽  
Elastic Stiffness ◽  
Distribution Analysis ◽  
First Principles Calculations ◽  
Generalized Gradient ◽  
Functional Theory ◽  
B2 Structure ◽  
Bonding Characteristic

In this study, the structural, elastic, electronic, and bonding nature of AgZn in B2 structure under pressure have been investigated by performing first principles calculations using density functional theory. The exchange-correlation potentials were treated within the generalized gradient approximation. The calculated quantities agree well with the available results. The electronic properties, such as band structure and density of states reveal that AgZn is metallic in nature with a large overlap at the Fermi level. The single-crystal elastic stiffness constants of AgZn are investigated using the stress–strain method. Present results for elastic constants show that AgZn is mechanically stable. The chemical bonding is interpreted by calculating the density of states and electron density distribution analysis. AgZn has ionic bonding characteristic.

Electronic, Optical and Vibrational Properties of B3N3H6 from First-Principles Calculations

2021 ◽  
Author(s):  
Yun-Dan Gan ◽  
Han Qin ◽  
Fu-Sheng Liu ◽  
Zheng-Tang Liu ◽  
Cheng lu Jiang ◽  
...  
Keyword(s):  
First Principles ◽  
Density Functional ◽  
Local Density ◽  
Structural Parameters ◽  
Vibrational Properties ◽  
First Principles Calculations ◽  
Generalized Gradient ◽  
Functional Theory ◽  
Conductivity Loss ◽  
Good Agreement

Abstract The electronic, optical and vibrational properties of B3N3H6 have been calculated by means of first-principles density functional theory (DFT) calculations within the generalized gradient approximation (GGA) and the local density approximation (LDA). The calculated structural parameters of B3N3H6 are in good agreement with experimental work. With the band structure and density of states (DOS), we have analyzed the optical properties including the complex dielectric function, refractive index, absorption, conductivity, loss function and reflectivity. By the contrast, it is found that on the (001) component and (100) component have obvious optical anisotropy. Moreover, the vibrational properties have been obtained and analyzed.

First-Principles Calculation of Elastic Constants for FeP

2013 ◽  
Vol 321-324 ◽  
pp. 1761-1765 ◽  
Author(s):  
Jian Ying Li ◽  
Jing Zhang ◽  
Qi Zhi Cao ◽  
Yi Fang Ouyang
Keyword(s):  
Elastic Constants ◽  
Density Functional ◽  
Formation Enthalpy ◽  
Density Functional Theory Method ◽  
First Principles Calculation ◽  
Electronic Density ◽  
Functional Theory ◽  
The Density Functional Theory ◽  
Theoretical Results ◽  
Good Agreement

The elastic constants of FeP with orthorhombic structure were calculated by using the density-functional theory method. The formation enthalpy, electronic density of states, bulk modulus, and lattice parameters of orthorhombic FeP were also calculated. All of the results are in good agreement with the experimental data and theoretical results available. The results indicate that orthorhombic FeP intermetallic compound is brittleness.

scholarly journals First-Principles Study of the Structural Stability and Electronic and Elastic Properties of Helium inα-Zirconium

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
Jian Zheng ◽  
Huijun Zhang ◽  
Xiaosong Zhou ◽  
Jianhua Liang ◽  
Liusi Sheng ◽  
...  
Keyword(s):  
Density Functional Theory ◽  
Elastic Properties ◽  
Density Of States ◽  
First Principles ◽  
Octahedral Site ◽  
Density Functional ◽  
Formation Energy ◽  
Interstitial Site ◽  
First Principles Calculations ◽  
Functional Theory

First-principles calculations within density functional theory have been performed to investigate the behaviors of helium inα-zirconium. The most favorable interstitial site for He inα-Zr is not an ordinary tetrahedral or octahedral site, but a basal octahedral site with a formation energy as low as 2.40 eV. The formation energy reduces to 1.25 eV in the presence of preexisting vacancies. The analysis on the density of states and the charge density has been carried out. In addition, the influences of He and small He-V complexes on the elastic properties have been studied. The He-V complexes have been found to greatly affect the elastic properties compared with He alone.

scholarly journals First principles calculations of the electronic and dielectric properties of λ-Ta2O5

TecnoLógicas ◽  
2018 ◽  
Vol 21 (43) ◽  
pp. 43-52 ◽  
Author(s):  
Camilo Valencia-Balvín ◽  
Santiago Pérez-Walton ◽  
Jorge M. Osorio-Guillén
Keyword(s):  
Density Functional Theory ◽  
First Principles ◽  
Density Functional ◽  
Theoretical Study ◽  
Wide Bandgap ◽  
First Principles Calculations ◽  
Functional Theory ◽  
Wide Bandgap Semiconductor ◽  
Exchange Correlation ◽  
Good Agreement

Ta2O5 is a wide-bandgap semiconductor that offers interesting applications in microwavecommunications, mainly related to the manufacture of filters and resonators whosesize is inversely proportional to the dielectric constant of the material. For that reason, inthis work we present a theoretical study, based on density functional theory (using PBEsoland hybrid HSE06 exchange-correlation functionals), of the electronic and dielectricproperties of the orthorhombic model -Ta2O5. We found that this model has a direct gap of2.09 and 3.7 eV with PBEsol and HSE06, respectively. Furthermore, the calculated staticdielectric constant, 51, is in good agreement with the reported values of other phases of thissemiconductor.

First-principles study on the electronic structure and elastic properties of Mo2NiB2 doped with V

2018 ◽  
Vol 32 (10) ◽  
pp. 1850065 ◽  
Author(s):  
Jinming Li ◽  
Xiaobo Li ◽  
Haiyun Gao ◽  
Dian Peng
Keyword(s):  
Electronic Structure ◽  
Elastic Properties ◽  
Density Of States ◽  
First Principles ◽  
Density Functional ◽  
Mechanical Stability ◽  
Formation Enthalpy ◽  
First Principles Calculations ◽  
Functional Theory ◽  
Ternary Boride

The content of this study is to analyze the electronic structure and elastic properties that the different structures of Mo2NiB2 and doping with V of the tetragonal M3B2 (Mo2Ni[Formula: see text]V[Formula: see text]B2 and Mo[Formula: see text]Ni[Formula: see text]V[Formula: see text]B2) (x = 0.25, 0.5, 0.75 and y = 0.125, 0.25, 0.375) by first-principles calculations based on density functional theory (DFT) combined with the projection-plus-wave method. But the calculated formation energy shows that V atoms prefer to substitute the Mo and Ni atoms of the tetragonal Mo2NiB2. Moreover, with the increase of V content, the formation enthalpy of tetragonal Mo2NiB2 is reduced, and the formation enthalpy of Mo[Formula: see text]Ni[Formula: see text]V[Formula: see text]B2 is the least as −53.23 kJ/mol. The calculated elastic constant suffices the condition of mechanical stability, indicate that they are stable. The calculated elastic modulus illustrates that Mo2NiB2 having better mechanical properties when V elements are at Mo and Ni sites instead of Ni sites. The calculated and analyzed density of states of Mo[Formula: see text]Ni[Formula: see text]V[Formula: see text]B2 has the smallest the density of states at the Fermi level indicating that it has the more stable structure. For the theoretical analysis of the first-principles calculations, the addition of 15 atom% of the V and V doping modes of Mo and Ni are preferentially replaced by V atoms of Mo2NiB2 ternary boride has the best performance.

scholarly journals The Effect of Point Defects on the Electronic Density of States of ScMN2-Type (M = V, Nb, Ta) Phases

2019 ◽  
Vol 4 (3) ◽  
pp. 70 ◽  
Author(s):  
Robert Pilemalm ◽  
Sergei Simak ◽  
Per Eklund
Keyword(s):  
Density Of States ◽  
Point Defects ◽  
First Principles ◽  
Density Functional ◽  
First Principles Calculations ◽  
Electronic Density ◽  
Functional Theory ◽  
Occupied State ◽  
Narrow Bandgap ◽  
Bandgap Semiconductors

ScMN2-type (M = V, Nb, Ta) phases are layered materials that have been experimentally reported for M = Ta and Nb. They are narrow-bandgap semiconductors with potentially interesting thermoelectric properties. Point defects such as dopants and vacancies largely affect these properties, motivating the need to investigate these effects. In particular, asymmetric peak features in the density of states (DOS) close to the highest occupied state is expected to increase the Seebeck coefficient. Here, we used first principles calculations to study the effects of one vacancy or one C, O, or F dopant on the DOS of the ScMN2 phases. We used density functional theory to calculate formation energy and the density of states when a point defect is introduced in the structures. In the DOS, asymmetric peak features close to the highest occupied state were found as a result of having a vacancy in all three phases. Furthermore, one C dopant in ScTaN2, ScNbN2, and ScVN2 implies a shift of the highest occupied state into the valence band, while one O or F dopant causes a shift of the highest occupied state into the conduction band.

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