The Growth, Surface Topography and Curie Temperature in Ni Thin Films: Kinetic Lattice Monte Carlo Simulation

2010 ◽  
Vol 150-151 ◽  
pp. 493-498
Author(s):  
Ling Jun Zeng ◽  
Shuang Juan Shen ◽  
Qian Feng ◽  
Jian Min Zhang ◽  
Zhi Gao Chen ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Monte Carlo ◽  
Curie Temperature ◽  
Film Growth ◽  
Growth Surface ◽  
Lattice Monte Carlo ◽  
The Mean ◽  
Mc Simulation ◽  
Curie Temperatures ◽  
Curie Temperature Tc

Based on the Monte Carlo (MC) simulation, the film growth and magnetic properties of Ni (100) films are investigated. The simulated results indicate that the surface roughness of the Ni films drops with the increase of the substrate temperature and the decrease of the deposition rate. The Curie temperature Tc is greatly influenced by the surface roughness and size of Ni films. Moreover, it is found that the Curie temperatures of the films are related to the mean coordination number Z and the surface roughness r. The simulated results explain the experimental facts well.

scholarly journals A SIMPLE SOLID-ON-SOLID MODEL OF EPITAXIAL FILM GROWTH: SURFACE ROUGHNESS AND DYNAMICS

1999 ◽  
Vol 10 (04) ◽  
pp. 645-657 ◽  
Author(s):  
K. MALARZ ◽  
A. Z. MAKSYMOWICZ
Keyword(s):  
Surface Roughness ◽  
Film Growth ◽  
Growth Models ◽  
Limited Range ◽  
Growth Exponent ◽  
Growth Surface ◽  
Model Calculations ◽  
Surface Migration ◽  
Two Factors ◽  
Epitaxial Film Growth

The random deposition model must be enhanced to reflect the variety of surface roughness due to some material characteristics of the film growing by vacuum deposition or sputtering. The essence of the computer simulation in this case is to account for possible surface migration of atoms just after the deposition, in connection with the binding energy between atoms (as the mechanism provoking the diffusion) and/or diffusion energy barrier. The interplay of these two factors leads to different morphologies of the growing surfaces, from flat and smooth ones to rough and spiky ones. In this paper, we extended our earlier calculation by applying an extra diffusion barrier at the edges of terrace-like structures, known as the Ehrlich–Schwoebel barrier. It is experimentally observed that atoms avoid descending when the terrace edge is approached, and these barriers mimic this tendency. Results of our Monte Carlo computer simulations are discussed in terms of surface roughness, and compared with other model calculations and some experiments from literature. The power law of the surface roughness σ against film thickness t was confirmed. The nonzero minimum value of the growth exponent β near 0.2 was obtained which is due to the limited range of the surface diffusion and the Ehrlich–Schwoebel barrier. Observations for different diffusion ranges are also discussed. The results are also confirimed with some deterministic growth models.

Kinetic Monte Carlo Simulations of Ge Segregation During Epitaxial Growth of Si-SixGel-x Heterostructures

1994 ◽  
Vol 340 ◽  
Author(s):  
J. Deppe ◽  
J. V. Lill ◽  
D. J. Godbey ◽  
K. D. Hobart
Keyword(s):  
Monte Carlo ◽  
Surface Diffusion ◽  
Photoelectron Spectroscopy ◽  
Surface Segregation ◽  
Film Growth ◽  
Kinetic Monte Carlo ◽  
Growth Surface ◽  
Germanium Surface ◽  
Specific Step ◽  
Kinetic Monte Carlo Simulations

ABSTRACTThe temperature dependence of germanium surface segregation during growth by solid source SiGe molecular beam epitaxy was studied by x-ray photoelectron spectroscopy and kinetic Monte Carlo (KMC) modeling. Germanium segregation persisted at temperatures 60ºC below that predicted by a two-state exchange model. KMC simulations, where film growth, surface diffusion, and surface segregation are modeled consistently, successfully describe the low temperature segregation of germanium. Realistic descriptions of MBE must follow the physical rates of the growth, surface diffusion, and surface segregation processes. A specific, step mediated exchange mechanism is also considered and shown to lead to surface segregation. While this model of Ge segregation seems possible, more work is necessary to obtain a consistent set of energy barriers.

scholarly journals Monte Carlo Simulation of Thin Film Growth. Surface Structure and Lattice Defects.

2000 ◽  
Vol 51 (1) ◽  
pp. 81-86
Author(s):  
Yutaka KANEKO ◽  
Yasuaki HIWATARI ◽  
Katsuhiko OHARA ◽  
Tohru MURAKAMI
Keyword(s):  
Thin Film ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Surface Structure ◽  
Film Growth ◽  
Lattice Defects ◽  
Thin Film Growth ◽  
Growth Surface

Determination of Film Growth Rate and Surface Roughness using In-Situ Pyrometry

1996 ◽  
Vol 441 ◽  
Author(s):  
Z. Yina ◽  
Z. L. Akkerman ◽  
W. Smith ◽  
R. Gat
Keyword(s):  
Growth Rate ◽  
Surface Roughness ◽  
Film Growth ◽  
Apparent Temperature ◽  
Diamond Growth ◽  
Growth Surface ◽  
True Temperature ◽  
Film Growth Rate ◽  
Film Substrate

AbstractA model for the infrared radiation emitted by a film/substrate system has been developed which includes both the effects of interference in the growing film and of scattering from its rough growth surface. Predictions of the model for the time-dependence of the apparent temperature Tapp of the film/substrate system measured in-situ by both one-color and two-color infrared pyrometers are presented for the case of diamond growth on Si. Using this model, the following information can be obtained from in-situ pyrometric results in real time: the true temperature of the film/substrate system, the instantaneous film growth rate, and the rms surface roughness σ of the film.

Kinetic Lattice Monte Carlo Simulation of Cu Thin Film Growth

2010 ◽  
Vol 39 (1) ◽  
pp. 62-66
Author(s):  
吴子若 WU Zi-ruo ◽  
程鑫彬 CHENG Xin-bin ◽  
王占山 WANG Zhan-shan
Keyword(s):  
Thin Film ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Film Growth ◽  
Thin Film Growth ◽  
Lattice Monte Carlo ◽  
Kinetic Lattice Monte Carlo ◽  
Cu Thin Film ◽  
Kinetic Lattice

scholarly journals CRUMPLED-TO-TUBULE TRANSITION AND SHAPE TRANSFORMATIONS OF A MODEL OF SELF-AVOIDING SPHERICAL MESHWORK

2013 ◽  
Vol 24 (10) ◽  
pp. 1350075
Author(s):  
HIROSHI KOIBUCHI ◽  
ANDREY SHOBUKHOV
Keyword(s):  
Monte Carlo ◽  
Fractal Dimension ◽  
Pressure Difference ◽  
Radius Of Gyration ◽  
Mean Square ◽  
Pressure Term ◽  
Second Order Transition ◽  
The Mean ◽  
Mc Simulation ◽  
The One

This paper analyzes a new self-avoiding (SA) meshwork model using the canonical Monte Carlo (MC) simulation technique on lattices that consist of connection-fixed triangles. The Hamiltonian of this model includes a SA potential and a pressure term. The model identifies a crumpled-to-tubule (CT) transition between the crumpled and tubular phases. This is a second-order transition, which occurs when the pressure difference between the inner and outer sides of the surface is close to zero. We obtain the Flory swelling exponents [Formula: see text] and [Formula: see text] corresponding to the mean square radius of gyration [Formula: see text] and enclosed volume V, where Df is the fractal dimension. The analysis shows that [Formula: see text] at the transition is almost identical to the one of the smooth phase of previously reported SA model which has no crumpled phase.

Inhibition of Lithium Dendrite Growth with Highly Concentrated Ions: Cellular Automaton Simulation and Surrogate Model with Ensemble Neural Networks

2022 ◽  
Author(s):  
Tong Gao ◽  
Ziwei Qian ◽  
Hongbo Chen ◽  
Reza Shahbazian-Yassar ◽  
Issei Nakamura
Keyword(s):  
Neural Networks ◽  
Monte Carlo ◽  
Surrogate Model ◽  
Diffusion Limited Aggregation ◽  
Lattice Monte Carlo ◽  
Diffusion Limited ◽  
Simulation Based ◽  
Ensemble Neural Networks ◽  
Mc Simulation ◽  
Lithium Dendrite

We have developed a lattice Monte Carlo (MC) simulation based on the diffusion-limited aggregation model that accounts for the effect of the physical properties of small ions such as inorganic...

Sign in / Sign up

Export Citation Format

Share Document