Zinc Oxide Thin Films Grown by RF Magnetron Sputtering on Nanostructure Al Thin Layer/Glass and Glass Substrates

2010 ◽  
Vol 177 ◽  
pp. 398-403
Author(s):  
T.Z. Liu ◽  
Shu Wang Duo ◽  
H. Zhang ◽  
M.J. Ran
Keyword(s):  
Magnetron Sputtering ◽  
Glass Substrate ◽  
Optical Transmission ◽  
Rf Magnetron Sputtering ◽  
Deposition Process ◽  
Zno Films ◽  
Primary Role ◽  
Growth Interface ◽  
Axis Orientation ◽  
Glass Substrates

ZnO films with random and highly (002)-preferred orientation were deposited on nanostructured Al (n-Al) /glass and glass substrates at room temperature by RF magnetron sputtering method, respectively. According to I (002)/I (100) ≈I annealed (002)/I annealed (100) ≈1.1 (on n-Al) and 2I annealed (002) /I (002) (on n-Al) ≈ I annealed (002) /I (002) (on glass) ≈3.1, the rough n-Al surface is suitable for the growth of a-axis orientation, and the appearance of the (100) peak plays a major role in decreasing the c-axis orientation. The average optical transmission of the film on n-Al layer increased significantly after annealing. At the same time, the growth mode and E g of ZnO films were discussed. On n-Al layer/glass substrate, it is not easy for the growth interface to form the smooth surface during the deposition process and Stranski Krstanov plays a primary role on the deposition of the films. Due to the significant increase of the interplanar spacing d (101), the band gaps for as-grown and annealed films grown on n-Al decreased, comparing with that of the film deposited on glass substrate.

Zinc Oxide Thin Films Grown on Nanostructured Al Thin Layer/Glass Substrate by RF Magnetron Sputtering

2011 ◽  
Vol 239-242 ◽  
pp. 777-780
Author(s):  
Ting Zhi Liu ◽  
Shu Wang Duo ◽  
C Y Hu ◽  
C B Li
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Thin Layer ◽  
Glass Substrate ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Zno Film ◽  
Substrate Roughness ◽  
Axis Orientation

ZnO films were deposited on nanostructured Al (n-Al) /glass substrate by RF magnetron sputtering. The results shows that the relation (I (002) /I (100) ≈ I annealed (002)/I annealed (100) ≈1.1) shows the rough n-Al surface is suitable for the growth of a-axis orientation. Meanwhile, the influences of substrate roughness, crystallinity and (101) plane of ZnO film deposited on n-Al layer have been discussed. XPS implies more oxygen atoms are bound to Aluminum atoms, which result in the increase of high metallic Zn in the film.

STUDY ON THE STRUCTURE AND OPTICAL PROPERTIES OF Zn1-xCrxO FILMS BY RF MAGNETRON SPUTTERING TECHNIQUE

2008 ◽  
Vol 22 (30) ◽  
pp. 5279-5287
Author(s):  
J. JU ◽  
X. M. WU ◽  
L. J. ZHUGE
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Lattice Parameter ◽  
Crystal Lattice Parameter ◽  
Zno Films ◽  
Ultraviolet Region ◽  
Axis Orientation ◽  
Glass Substrates ◽  
Cr Concentration

Zn 1-x Cr x O (x = 0, 0.03, 0.09) films were prepared by the radio frequency (RF) magnetron sputtering technique on Si (111) and quartz glass substrates. The effects of Cr -doping on the structural and optical properties of ZnO films have been discussed. The structural properties were investigated using X-ray diffraction (XRD) and scanning electron microscope (SEM) while optical properties using UV-Visible spectrophotometer (UV-VIS). XRD measurement revealed that the films were single phase and wurtzite structure with c-axis orientation. With the increase of Cr concentration, the intensity of the (002) peak and the grain size of the Zn 1-x Cr x O (x = 0, 0.03, 0.09) films decreased, and the Full Width at Half Maximum (FWHM) of (002) peak, the crystal lattice parameter c of Zn 1-x Cr x O (x = 0, 0.03, 0.09) films and the width of optical band gap increased, respectively. In the transmittance spectra of the Zn 1-x Cr x O (x = 0, 0.03, 0.09) films, the movement of the absorption edge of the ultraviolet region is the Burstein–Moss shift with the increase of Cr concentration.

Effect of Substrate Temperature on the Properties of Al-Doped ZnO Films by RF Magnetron Sputtering

2010 ◽  
Vol 663-665 ◽  
pp. 1293-1297 ◽  
Author(s):  
Yue Bo Wu ◽  
Sheng Lei ◽  
Zhe Wang ◽  
Ru Hai Zhao ◽  
Lei Huang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Axis Orientation ◽  
Glass Substrates ◽  
Higher Temperature ◽  
Doped Zno ◽  
Substrate Temperatures

The Al-doped ZnO (AZO) films were deposited on the glass substrates by RF magnetron sputtering at different substrate temperatures. The effect of substrate temperature on the structural, optical, and electrical properties of AZO films was investigated. The results indicate each of the films has a preferential c-axis orientation. The grain size increases with substrate temperature increasing. All the films exhibit a high transmittance in visible region and have sharp ultraviolet absorption characteristics. The resistivity decreases with substrate temperature increasing up to 250oC, then increases for higher temperature.

scholarly journals Microstructural control of ZnO films deposited by RF magnetron sputtering for ultrasound transducers

2021 ◽  
Author(s):  
◽  
Dayna-Maree Kivell
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Surface ◽  
Rf Magnetron Sputtering ◽  
Deposition Process ◽  
Film Stress ◽  
Zno Films ◽  
Ultrasound Transducers ◽  
Deposition Rates ◽  
Axis Orientation ◽  
Deposition Parameter

<p>The aim of this study was to develop a deposition process using RF magnetron sputtering for the production of zinc oxide (ZnO) thin films on glass substrates. These ZnO films were to be used as the active piezoelectric element in very high frequency ultrasound transducers (> 300 MHz). In order to achieve piezoelectric activity the films had to be oriented with the c-axis of the ZnO grains perpendicular to the substrate surface. At the same time, a moderately high, at least 1 m=hr (17 nm=min) deposition rate was required for the production of practical devices. Prior to a full investigation into the sputtering parameters, an initial evaluation of the HHV Auto500 RF magnetron sputter coater system was performed. Using the original chamber configuration it was not possible to deposit ZnO at the required deposition rates. A modification of the growth chamber to allow a reduced target-substrate distance was successful in producing ZnO films at the required deposition rates. A systematic study into the deposition parameters and their effect on the ZnO film quality and deposition rates was then performed and it was found that strong c-axis oriented films could be deposited only when depositing at rates below 15 nm=min at a low substrate temperature (< 50 C). Depositions above this rate resulted in the growth of polycrystalline films. A two-step deposition process was designed to preserve c-axis orientation at high deposition rates up to 28 nm=min. The ZnO films were found to be highly strained due to inherent stress from the sputtering process. The deposition pressure was identified as the most critical deposition parameter for stress control. It was found that deposition above a critical pressure of 1:2 x10-² mbar was essential to prevent mechanical failure of the films. Post growth annealing was investigated and determined to be a viable technique to relax stress and improve the crystalline quality of the films. Finally a four-step deposition process was proposed to facilitate the growth of c-axis oriented ZnO films at relatively high deposition rates whilst minimising film stress.</p>

scholarly journals Microstructural control of ZnO films deposited by RF magnetron sputtering for ultrasound transducers

2021 ◽  
Author(s):  
◽  
Dayna-Maree Kivell
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Surface ◽  
Rf Magnetron Sputtering ◽  
Deposition Process ◽  
Film Stress ◽  
Zno Films ◽  
Ultrasound Transducers ◽  
Deposition Rates ◽  
Axis Orientation ◽  
Deposition Parameter

<p>The aim of this study was to develop a deposition process using RF magnetron sputtering for the production of zinc oxide (ZnO) thin films on glass substrates. These ZnO films were to be used as the active piezoelectric element in very high frequency ultrasound transducers (> 300 MHz). In order to achieve piezoelectric activity the films had to be oriented with the c-axis of the ZnO grains perpendicular to the substrate surface. At the same time, a moderately high, at least 1 m=hr (17 nm=min) deposition rate was required for the production of practical devices. Prior to a full investigation into the sputtering parameters, an initial evaluation of the HHV Auto500 RF magnetron sputter coater system was performed. Using the original chamber configuration it was not possible to deposit ZnO at the required deposition rates. A modification of the growth chamber to allow a reduced target-substrate distance was successful in producing ZnO films at the required deposition rates. A systematic study into the deposition parameters and their effect on the ZnO film quality and deposition rates was then performed and it was found that strong c-axis oriented films could be deposited only when depositing at rates below 15 nm=min at a low substrate temperature (< 50 C). Depositions above this rate resulted in the growth of polycrystalline films. A two-step deposition process was designed to preserve c-axis orientation at high deposition rates up to 28 nm=min. The ZnO films were found to be highly strained due to inherent stress from the sputtering process. The deposition pressure was identified as the most critical deposition parameter for stress control. It was found that deposition above a critical pressure of 1:2 x10-² mbar was essential to prevent mechanical failure of the films. Post growth annealing was investigated and determined to be a viable technique to relax stress and improve the crystalline quality of the films. Finally a four-step deposition process was proposed to facilitate the growth of c-axis oriented ZnO films at relatively high deposition rates whilst minimising film stress.</p>

Properties of Nano-ZnO Films Deposited by RF Magnetron Sputtering for SAW Biosensors

2011 ◽  
Vol 418-420 ◽  
pp. 293-296
Author(s):  
Qiu Yun Fu ◽  
Peng Cheng Yi ◽  
Dong Xiang Zhou ◽  
Wei Luo ◽  
Jian Feng Deng
Keyword(s):  
Magnetron Sputtering ◽  
Deposition Time ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Nano Zno ◽  
Axis Orientation ◽  
X Ray

Abstract. In this article, nano-ZnO films were deposited on SiO2/Si (100) substrates by RF (radio frequency) magnetron sputtering using high purity (99.99%) ZnO target. The effects of deposition time and annealing temperature have been investigated. XRD (X-ray diffraction) and FSEM (Field Emission Scanning Electron Microscopy) were employed to characterize the quality of the films. The results show that the ZnO film with thickness of 600nm annealed at 900°C has higher quality of both C-axis orientation and crystallization. And for the Zone film with thickness of 300nm annealed at 850°C, the quality of both C-axis orientation and crystallization is higher than that annealed at 900°C and 950°C.

Fabrication and Study of P-Type ZnO Films by RF Magnetron Sputtering of ZnO: In2O3 Powder Together with the N-Implantation

2012 ◽  
Vol 503-504 ◽  
pp. 350-353
Author(s):  
Mao Nan ◽  
Chun Yang Kong ◽  
Guo Ping Qin ◽  
Hai Bo Ruan
Keyword(s):  
Magnetron Sputtering ◽  
Hole Concentration ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Electrical Characteristics ◽  
Radio Frequency Magnetron Sputtering ◽  
Glass Substrates ◽  
Powder Target ◽  
Post Annealing ◽  
P Type

The N-In codoped p-type ZnO films with preferential orientation along (002) plane have been fabricated on quartz glass substrates using radio frequency magnetron sputtering technique of ZnO:In2O3 powder target combining with N-implantation. The samples annealed at 700°C deserved the optimal properties, the best of which exhibits electrical characteristics with the hole concentration of 4.04×1018 cm-3, the lowest resistivity of 1.15 Ωcm and Hall mobility of about 1.35 cm2V-1s-1. The effects of post-annealing on the microstructure and electronic properties of the codoped ZnO films is analyzed via SEM, XRD, XPS and Hall measurements system, and the trend of carrier concentration with annealing time is discussed theoretically.

The Photoelectric and Photocatalytic Property Study of Cu2S/ZnO Films

2012 ◽  
Vol 271-272 ◽  
pp. 301-304
Author(s):  
Feng Xu ◽  
Sheng Nan Sun ◽  
Yi Xin Wang ◽  
Jia Jia Cao ◽  
Zi Han Wang ◽  
...  
Keyword(s):  
Photocatalytic Activity ◽  
Methyl Orange ◽  
Magnetron Sputtering ◽  
Glass Substrate ◽  
Photocatalytic Property ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Zno Film

ZnO film and Cu2S/ZnO bilays on the glass substrate were fabricated by RF magnetron sputtering. We carried out the experiments by adjusting the thickness of Cu2S on ZnO layer. The performance of Cu2S/ZnO on the transparency, conduction and photocatalysis were investigated. The photocatalytic experiments showed a good photocatalytic activity for photodegradation of methyl orange.

Structural evolution of ZnO films deposited by rf magnetron sputtering on glass substrate

2010 ◽  
Vol 207 (8) ◽  
pp. 1850-1853 ◽  
Author(s):  
Yan-Ping Liao ◽  
Jian-Hua Zhang ◽  
Shu-Xin Li ◽  
Zhan-Sheng Guo ◽  
Jin Cao ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Glass Substrate ◽  
Structural Evolution ◽  
Rf Magnetron Sputtering ◽  
Zno Films

Influence of Sputtering Power on Structural and Optical Properties of ZnO Films Fabricated by RF Magnetron Sputtering

2014 ◽  
Vol 1053 ◽  
pp. 325-331
Author(s):  
Yang Zhou ◽  
Hong Fang Zheng ◽  
Guang Zhao ◽  
Man Li ◽  
Bao Ting Liu
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Axis Orientation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Light Region ◽  
Sputtering Power ◽  
Average Transmission

ZnO thin film has been fabricated on sapphire substrate (0001) using RF magnetron sputtering at room temperature. The influence of sputtering power ranging from 10 W to 70 W on the microstructural and optical properties of ZnO films is investigated by atomic force microscopy (AFM), X-ray diffraction (XRD), ultraviolet-visible spectrophotometer. The AFM results show that with the increase of sputtering power, the size of ZnO crystalline increases first, then decrease and the maximum grain size occurs at 50 W. The XRD measurements indicate that the ZnO films with wurtzite structure are highly c-axis orientation and the film fabricated at 50 W has the best crystalline quality. Optical transmission spectra of the ZnO samples demonstrate that the ZnO film obtained at 50 W has the higher average transmission (above 90%) in the visible-light region and its optical band gap is 3.26 eV.

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