Influence of Sputtering Power on Structural and Optical Properties of ZnO Films Fabricated by RF Magnetron Sputtering

2014 ◽  
Vol 1053 ◽  
pp. 325-331
Author(s):  
Yang Zhou ◽  
Hong Fang Zheng ◽  
Guang Zhao ◽  
Man Li ◽  
Bao Ting Liu
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Axis Orientation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Light Region ◽  
Sputtering Power ◽  
Average Transmission

ZnO thin film has been fabricated on sapphire substrate (0001) using RF magnetron sputtering at room temperature. The influence of sputtering power ranging from 10 W to 70 W on the microstructural and optical properties of ZnO films is investigated by atomic force microscopy (AFM), X-ray diffraction (XRD), ultraviolet-visible spectrophotometer. The AFM results show that with the increase of sputtering power, the size of ZnO crystalline increases first, then decrease and the maximum grain size occurs at 50 W. The XRD measurements indicate that the ZnO films with wurtzite structure are highly c-axis orientation and the film fabricated at 50 W has the best crystalline quality. Optical transmission spectra of the ZnO samples demonstrate that the ZnO film obtained at 50 W has the higher average transmission (above 90%) in the visible-light region and its optical band gap is 3.26 eV.

Role of Sputtering Power on the Structural and Optical Properties of ZnO/SiO2 Films Deposited by Radio Frequency Magnetron Sputtering

2013 ◽  
Vol 760-762 ◽  
pp. 776-779
Author(s):  
Shuang Li ◽  
Ming Chen ◽  
Feng Xiang Wang
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Force Microscopy ◽  
Sputtering Power

In the present work, we investigated the effect of sputtering power on the structural and optical properties of ZnO films by radio frequency (rf) magnetron sputtering. Atom force microscopy (AFM), X-ray diffraction (XRD) and Prism coupling method were adopted to investigate the structure and optical properties of ZnO thin films deposited by sputtering powers in the range from 100~150W. XRD and AFM results shown that ZnO films with high c-axis preferred orientation crystalline structures have been successfully deposited under higher sputtering power condition. Moreover, it was also found that the indexes refractive of the films obtained by higher sputtering power are less than that of the bulk ZnO materials, which is closer to Crystal Refractive index.

Studies of Hydroxyapatite Thin Coating Produced by Dual RF Magnetron Sputtering for Biomedical Applications

2011 ◽  
Vol 493-494 ◽  
pp. 473-476
Author(s):  
E.O. Lopez ◽  
F.F. Borghi ◽  
Alexandre Mello ◽  
J. Gomes ◽  
Antonella M. Rossi
Keyword(s):  
Magnetron Sputtering ◽  
Deposition Time ◽  
Grazing Incidence ◽  
Rf Magnetron Sputtering ◽  
Nanocrystalline Phase ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Sputtering Power

In this present work, we characterize HAp thin films deposited by dual magnetron sputtering device DMS on silicon (Si/HAp). The sputtering RF power was varied from 90 watts to 120 watts and deposition times from 60 to 180 minutes. The argon and oxygen pressure were fixed at 5.0 mTorr and 1.0 mTorr, respectively. Grazing incidence X-ray diffraction (GIXRD) from synchrotron radiation, infrared spectroscopy (FTIR) and atomic force microscopy (AFM) were used for the structural characterization. At lower deposition times, a crystalline phase with preferential orientation along apatite (002) and a disordered nanocrystalline phase were identified. The coating crystallinity was improved with the increase of the deposition time besides the sputtering power.

STUDY ON THE STRUCTURE AND OPTICAL PROPERTIES OF Zn1-xCrxO FILMS BY RF MAGNETRON SPUTTERING TECHNIQUE

2008 ◽  
Vol 22 (30) ◽  
pp. 5279-5287
Author(s):  
J. JU ◽  
X. M. WU ◽  
L. J. ZHUGE
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Lattice Parameter ◽  
Crystal Lattice Parameter ◽  
Zno Films ◽  
Ultraviolet Region ◽  
Axis Orientation ◽  
Glass Substrates ◽  
Cr Concentration

Zn 1-x Cr x O (x = 0, 0.03, 0.09) films were prepared by the radio frequency (RF) magnetron sputtering technique on Si (111) and quartz glass substrates. The effects of Cr -doping on the structural and optical properties of ZnO films have been discussed. The structural properties were investigated using X-ray diffraction (XRD) and scanning electron microscope (SEM) while optical properties using UV-Visible spectrophotometer (UV-VIS). XRD measurement revealed that the films were single phase and wurtzite structure with c-axis orientation. With the increase of Cr concentration, the intensity of the (002) peak and the grain size of the Zn 1-x Cr x O (x = 0, 0.03, 0.09) films decreased, and the Full Width at Half Maximum (FWHM) of (002) peak, the crystal lattice parameter c of Zn 1-x Cr x O (x = 0, 0.03, 0.09) films and the width of optical band gap increased, respectively. In the transmittance spectra of the Zn 1-x Cr x O (x = 0, 0.03, 0.09) films, the movement of the absorption edge of the ultraviolet region is the Burstein–Moss shift with the increase of Cr concentration.

Influence of Sputtering Power and Substrate Temperature on Properties of Al2O3-Doped ZnO Films

2012 ◽  
Vol 557-559 ◽  
pp. 1945-1949
Author(s):  
Ge Yu ◽  
Ya Liu ◽  
Dan Hong Hong ◽  
Dong Lin Li ◽  
Jian Xin Zang
Keyword(s):  
Optical Properties ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Electrical And Optical Properties ◽  
Atomic Force ◽  
Argon Flow ◽  
Sputtering Power ◽  
Diffraction Peaks ◽  
Substrate Temperatures

Aluminum oxide-doped zinc oxide (AZO) films were deposited by radio frequency (RF) magnetron sputtering at various substrate temperatures and sputtering powers with pure argon flow. Their electrical and optical properties and microstructures were investigated by X-ray diffractometer (XRD), atomic force microscope (AFM), ultraviolet-visible spectrophotometer, four-probe tester. The investigation indicates that the electrical and optical properties and microstructures of the AZO films are remarkably influenced by substrate temperature and sputtering power. With the sputtering power increasing from 60W to 180W, the diffraction peaks rise significantly, the resistivity decreases quickly and the visible transmission is all quite high. When the substrate temperature increases from 25°C to 400°C, the diffraction peaks rise first and lower then both quickly, the resistivity decreases first sharply and then very slowly, and the visible transmission is also high. The films deposited at the substrate temperature 300°C with the sputtering power 180W have low resistivity 1.2×10–3 Ω•cm and high transmittance 92% at the same time.

STRUCTURE AND OPTICAL PROPERTIES OF InN THIN FILM GROWN ON SiC BY REACTIVE RF MAGNETRON SPUTTERING

2013 ◽  
Vol 20 (01) ◽  
pp. 1350008 ◽  
Author(s):  
M. AMIRHOSEINY ◽  
Z. HASSAN ◽  
S. S. NG ◽  
G. ALAHYARIZADEH
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Root Mean Square Roughness ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Growth Orientation ◽  
Atomic Force

The structure and optical properties of InN thin film grown on 6H-SiC by reactive radio frequency magnetron sputtering were investigated. X-ray diffraction measurement shows that the deposited InN film has (101) preferred growth orientation and wurtzite structure. Atomic force microscopy results reveal smooth surface with root-mean-square roughness around 3.3 nm. One Raman-active optical phonon of E2(high) and two Raman- and infrared-active modes of A1(LO) and E1(TO) of the wurtzite InN are clearly observed at 488.7, 582.7 and 486 cm-1, respectively. These results leading to conclude that the wurtzite InN thin film with (101) preferred growth orientation was successfully grown on 6H-SiC substrate.

Synthesis and Morphology of ZnO Films Prepared by Magnetron Sputtering

2013 ◽  
Vol 307 ◽  
pp. 333-336
Author(s):  
Shiuh Chuan Her ◽  
Tsung Chi Chi
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Xrd Patterns

Zinc oxide (ZnO) thin films were deposited on glass substrate by Radio frequency (RF) magnetron sputtering. The effect of substrate temperature on the microstructure of the ZnO films has been investigated. Crystal structure and surface morphology of the films were examined by X-ray diffraction (XRD) and atomic force microscopy (AFM). XRD patterns and AFM images show that the crystallinity and grain size are increasing with the increase of substrate temperature.

Micrographs and Optical Properties of Al-Doped ZnO Thin Films Deposited by Radio Frequency Magnetron Sputtering

2014 ◽  
Vol 924 ◽  
pp. 176-180
Author(s):  
Yuan Yuan Li ◽  
Zhen Chen ◽  
Shu Li Li ◽  
Xi Long Li ◽  
Geng Rong Chang ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Rf Magnetron Sputtering ◽  
Sem Images ◽  
Axis Orientation ◽  
Glass Substrates ◽  
Light Region ◽  
Doped Zno

The micrographs and optical properties of Al-doped ZnO (AZO) films deposited by radio frequency (RF) magnetron sputtering are presented in this paper. The AZO films termed as films I, II and III were sputtered on glass substrates heating at 300C, 400C and 500C, respectively. The micrographs, crystal structures and optical properties of AZO thin films were analyzed by using scanning electronic microscopy (SEM) images, X-ray diffraction (XRD) pattern, optical transmission and reflection spectra ranging from 350 to 1000 nm. As the substrate temperature increases to 500C, the film III exhibits a better flatness surface and a larger grain size of ~25nm with a stronger c-axis orientation. The film II has a high transmittance of greater than 92% in the visible light region. We also show that the films II and III have significant red-shift band gap ~3.00 and ~3.13eV, respectively, in comparison with that of the film I (3.31eV). This might be due to the increasing doped Al atoms which do not activate due to segregation at the grain boundaries.

Influence of Post Annealing Temperature on the Properties of ZnO Films Prepared by RF Magnetron Sputtering

2012 ◽  
Vol 576 ◽  
pp. 602-606
Author(s):  
Samsiah Ahmad ◽  
N.D.M. Sin ◽  
M.N. Berhan ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Magnetron Sputtering ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Post Annealing ◽  
Current Voltage ◽  
Post Annealing Temperature

Zinc Oxide (ZnO) films were prepared on unheated glass substrate by radio frequency (RF) magnetron sputtering technique and post deposition annealing of the ZnO thin film were performed at 350, 400, 450 and 500°C. Post annealing temperature was found to improve the structural and electrical characteristics of the deposited films. The structural properties of the films were carried out by the surface profiler, X-Ray diffraction (XRD), atomic force microscopy (AFM) and field emission scanning electron microscope (FESEM) while the electrical properties were measured using current voltage (I-V) probe measurement system. All samples exhibit the (002) peak and the sample annealed at 500°C gives the highest crystalline quality, highest Rms roughness (1.819 nm) and highest electrical conductivity (3.28 x 10-3 Sm-1).

Influence of Deposition Time on ZnO Films Grown by RF Magnetron Sputtering

2012 ◽  
Vol 562-564 ◽  
pp. 175-178 ◽  
Author(s):  
Zi Jun Ma
Keyword(s):  
Magnetron Sputtering ◽  
Deposition Time ◽  
Green Emission ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Green Emission Band ◽  
Atomic Force ◽  
Surface Morphologies

ZnO thin films were prepared on glass substrates by radio frequency co-reactive magnetron sputtering at different deposition time of 20, 40, 60 and 80 min. Surface morphologies and crystal structures were examined using atomic force microscopy and X-ray diffraction. As the deposition time increased to 60 min, surface morphologies of the films became smooth and distributed uniformly. The crystallinity along the c-axis improved as the deposition time increased. The photoluminescence (PL) studies indicate that three main emission peaks located at 439nm, 483nm and 525nm were observed. The intensity of 439nm emission increased to maximum as the deposition time was 80 min, while the intensity of green emission band (from 483 to 525nm) attained to maximum as the deposition time increased to 60 min.

ELECTRICAL AND OPTICAL PROPERTIES OF ZnO THIN FILMS PREPARED BY R.F. MAGNETRON SPUTTERING

2011 ◽  
Vol 25 (20) ◽  
pp. 2741-2749 ◽  
Author(s):  
J. C. ZHOU ◽  
L. LI ◽  
L. Y. RONG ◽  
B. X. ZHAO ◽  
Y. M. CHEN ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Oxide Thin Film ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Electrical And Optical Properties ◽  
Axis Orientation ◽  
Sputtering Power

High transparency and conductivity of transparent conducting oxide thin film are very important for improving the efficiency of solar cells. ZnO thin film is a better candidate for transparent conductive layer of solar cell. N-type ZnO thin films were prepared by radio-frequency magnetron sputtering on glass substrates. ZnO thin films underwent annealing treatment after deposition. The influence of the sputtering power on the surface morphology, the electrical and optical properties were studied by AFM, XRD, UV2450 and HMS-3000. The experimental results indicate that the crystal quality of ZnO thin film is improved and all films show higher c-axis orientation with increasing sputtering power from 50 to 125 W. The average transparency of ZnO thin films is higher than 90% in the range of 400–900 nm between the sputtering power of 50–100 W. After the rapid thermal annealing at 550°C for 300 s under N2 ambient, the minimum resistivity reach to 10-2Ω⋅ cm .

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