STUDY ON THE STRUCTURE AND OPTICAL PROPERTIES OF Zn1-xCrxO FILMS BY RF MAGNETRON SPUTTERING TECHNIQUE

Zn 1-x Cr x O (x = 0, 0.03, 0.09) films were prepared by the radio frequency (RF) magnetron sputtering technique on Si (111) and quartz glass substrates. The effects of Cr -doping on the structural and optical properties of ZnO films have been discussed. The structural properties were investigated using X-ray diffraction (XRD) and scanning electron microscope (SEM) while optical properties using UV-Visible spectrophotometer (UV-VIS). XRD measurement revealed that the films were single phase and wurtzite structure with c-axis orientation. With the increase of Cr concentration, the intensity of the (002) peak and the grain size of the Zn 1-x Cr x O (x = 0, 0.03, 0.09) films decreased, and the Full Width at Half Maximum (FWHM) of (002) peak, the crystal lattice parameter c of Zn 1-x Cr x O (x = 0, 0.03, 0.09) films and the width of optical band gap increased, respectively. In the transmittance spectra of the Zn 1-x Cr x O (x = 0, 0.03, 0.09) films, the movement of the absorption edge of the ultraviolet region is the Burstein–Moss shift with the increase of Cr concentration.

Download Full-text

Effect of Substrate Temperature on the Properties of Al-Doped ZnO Films by RF Magnetron Sputtering

Materials Science Forum ◽

10.4028/www.scientific.net/msf.663-665.1293 ◽

2010 ◽

Vol 663-665 ◽

pp. 1293-1297 ◽

Cited By ~ 1

Author(s):

Yue Bo Wu ◽

Sheng Lei ◽

Zhe Wang ◽

Ru Hai Zhao ◽

Lei Huang ◽

...

Keyword(s):

Magnetron Sputtering ◽

Substrate Temperature ◽

Visible Region ◽

Rf Magnetron Sputtering ◽

Zno Films ◽

Axis Orientation ◽

Glass Substrates ◽

Higher Temperature ◽

Doped Zno ◽

Substrate Temperatures

The Al-doped ZnO (AZO) films were deposited on the glass substrates by RF magnetron sputtering at different substrate temperatures. The effect of substrate temperature on the structural, optical, and electrical properties of AZO films was investigated. The results indicate each of the films has a preferential c-axis orientation. The grain size increases with substrate temperature increasing. All the films exhibit a high transmittance in visible region and have sharp ultraviolet absorption characteristics. The resistivity decreases with substrate temperature increasing up to 250oC, then increases for higher temperature.

Download Full-text

Zinc Oxide Thin Films Grown by RF Magnetron Sputtering on Nanostructure Al Thin Layer/Glass and Glass Substrates

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.177.398 ◽

2010 ◽

Vol 177 ◽

pp. 398-403

Author(s):

T.Z. Liu ◽

Shu Wang Duo ◽

H. Zhang ◽

M.J. Ran

Keyword(s):

Magnetron Sputtering ◽

Glass Substrate ◽

Optical Transmission ◽

Rf Magnetron Sputtering ◽

Deposition Process ◽

Zno Films ◽

Primary Role ◽

Growth Interface ◽

Axis Orientation ◽

Glass Substrates

ZnO films with random and highly (002)-preferred orientation were deposited on nanostructured Al (n-Al) /glass and glass substrates at room temperature by RF magnetron sputtering method, respectively. According to I (002)/I (100) ≈I annealed (002)/I annealed (100) ≈1.1 (on n-Al) and 2I annealed (002) /I (002) (on n-Al) ≈ I annealed (002) /I (002) (on glass) ≈3.1, the rough n-Al surface is suitable for the growth of a-axis orientation, and the appearance of the (100) peak plays a major role in decreasing the c-axis orientation. The average optical transmission of the film on n-Al layer increased significantly after annealing. At the same time, the growth mode and E g of ZnO films were discussed. On n-Al layer/glass substrate, it is not easy for the growth interface to form the smooth surface during the deposition process and Stranski Krstanov plays a primary role on the deposition of the films. Due to the significant increase of the interplanar spacing d (101), the band gaps for as-grown and annealed films grown on n-Al decreased, comparing with that of the film deposited on glass substrate.

Download Full-text

Influence of Sputtering Power on Structural and Optical Properties of ZnO Films Fabricated by RF Magnetron Sputtering

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.1053.325 ◽

2014 ◽

Vol 1053 ◽

pp. 325-331

Author(s):

Yang Zhou ◽

Hong Fang Zheng ◽

Guang Zhao ◽

Man Li ◽

Bao Ting Liu

Keyword(s):

Optical Properties ◽

Magnetron Sputtering ◽

Rf Magnetron Sputtering ◽

Zno Films ◽

Axis Orientation ◽

Force Microscopy ◽

Atomic Force ◽

Light Region ◽

Sputtering Power ◽

Average Transmission

ZnO thin film has been fabricated on sapphire substrate (0001) using RF magnetron sputtering at room temperature. The influence of sputtering power ranging from 10 W to 70 W on the microstructural and optical properties of ZnO films is investigated by atomic force microscopy (AFM), X-ray diffraction (XRD), ultraviolet-visible spectrophotometer. The AFM results show that with the increase of sputtering power, the size of ZnO crystalline increases first, then decrease and the maximum grain size occurs at 50 W. The XRD measurements indicate that the ZnO films with wurtzite structure are highly c-axis orientation and the film fabricated at 50 W has the best crystalline quality. Optical transmission spectra of the ZnO samples demonstrate that the ZnO film obtained at 50 W has the higher average transmission (above 90%) in the visible-light region and its optical band gap is 3.26 eV.

Download Full-text

Micrographs and Optical Properties of Al-Doped ZnO Thin Films Deposited by Radio Frequency Magnetron Sputtering

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.924.176 ◽

2014 ◽

Vol 924 ◽

pp. 176-180

Author(s):

Yuan Yuan Li ◽

Zhen Chen ◽

Shu Li Li ◽

Xi Long Li ◽

Geng Rong Chang ◽

...

Keyword(s):

Thin Films ◽

Optical Properties ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Rf Magnetron Sputtering ◽

Sem Images ◽

Axis Orientation ◽

Glass Substrates ◽

Light Region ◽

Doped Zno

The micrographs and optical properties of Al-doped ZnO (AZO) films deposited by radio frequency (RF) magnetron sputtering are presented in this paper. The AZO films termed as films I, II and III were sputtered on glass substrates heating at 300C, 400C and 500C, respectively. The micrographs, crystal structures and optical properties of AZO thin films were analyzed by using scanning electronic microscopy (SEM) images, X-ray diffraction (XRD) pattern, optical transmission and reflection spectra ranging from 350 to 1000 nm. As the substrate temperature increases to 500C, the film III exhibits a better flatness surface and a larger grain size of ~25nm with a stronger c-axis orientation. The film II has a high transmittance of greater than 92% in the visible light region. We also show that the films II and III have significant red-shift band gap ~3.00 and ~3.13eV, respectively, in comparison with that of the film I (3.31eV). This might be due to the increasing doped Al atoms which do not activate due to segregation at the grain boundaries.

Download Full-text

Zinc Oxide Thin Films Grown on Nanostructured Al Thin Layer/Glass Substrate by RF Magnetron Sputtering

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.239-242.777 ◽

2011 ◽

Vol 239-242 ◽

pp. 777-780

Author(s):

Ting Zhi Liu ◽

Shu Wang Duo ◽

C Y Hu ◽

C B Li

Keyword(s):

Thin Films ◽

Zinc Oxide ◽

Magnetron Sputtering ◽

Thin Layer ◽

Glass Substrate ◽

Rf Magnetron Sputtering ◽

Zno Films ◽

Zno Film ◽

Substrate Roughness ◽

Axis Orientation

ZnO films were deposited on nanostructured Al (n-Al) /glass substrate by RF magnetron sputtering. The results shows that the relation (I (002) /I (100) ≈ I annealed (002)/I annealed (100) ≈1.1) shows the rough n-Al surface is suitable for the growth of a-axis orientation. Meanwhile, the influences of substrate roughness, crystallinity and (101) plane of ZnO film deposited on n-Al layer have been discussed. XPS implies more oxygen atoms are bound to Aluminum atoms, which result in the increase of high metallic Zn in the film.

Download Full-text

Properties of Nano-ZnO Films Deposited by RF Magnetron Sputtering for SAW Biosensors

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.418-420.293 ◽

2011 ◽

Vol 418-420 ◽

pp. 293-296

Author(s):

Qiu Yun Fu ◽

Peng Cheng Yi ◽

Dong Xiang Zhou ◽

Wei Luo ◽

Jian Feng Deng

Keyword(s):

Magnetron Sputtering ◽

Deposition Time ◽

Rf Magnetron Sputtering ◽

Zno Films ◽

X Ray Diffraction ◽

Zno Film ◽

Nano Zno ◽

Axis Orientation ◽

X Ray

Abstract. In this article, nano-ZnO films were deposited on SiO2/Si (100) substrates by RF (radio frequency) magnetron sputtering using high purity (99.99%) ZnO target. The effects of deposition time and annealing temperature have been investigated. XRD (X-ray diffraction) and FSEM (Field Emission Scanning Electron Microscopy) were employed to characterize the quality of the films. The results show that the ZnO film with thickness of 600nm annealed at 900°C has higher quality of both C-axis orientation and crystallization. And for the Zone film with thickness of 300nm annealed at 850°C, the quality of both C-axis orientation and crystallization is higher than that annealed at 900°C and 950°C.

Download Full-text

Fabrication and Study of P-Type ZnO Films by RF Magnetron Sputtering of ZnO: In2O3 Powder Together with the N-Implantation

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.503-504.350 ◽

2012 ◽

Vol 503-504 ◽

pp. 350-353

Author(s):

Mao Nan ◽

Chun Yang Kong ◽

Guo Ping Qin ◽

Hai Bo Ruan

Keyword(s):

Magnetron Sputtering ◽

Hole Concentration ◽

Rf Magnetron Sputtering ◽

Zno Films ◽

Electrical Characteristics ◽

Radio Frequency Magnetron Sputtering ◽

Glass Substrates ◽

Powder Target ◽

Post Annealing ◽

P Type

The N-In codoped p-type ZnO films with preferential orientation along (002) plane have been fabricated on quartz glass substrates using radio frequency magnetron sputtering technique of ZnO:In2O3 powder target combining with N-implantation. The samples annealed at 700°C deserved the optimal properties, the best of which exhibits electrical characteristics with the hole concentration of 4.04×1018 cm-3, the lowest resistivity of 1.15 Ωcm and Hall mobility of about 1.35 cm2V-1s-1. The effects of post-annealing on the microstructure and electronic properties of the codoped ZnO films is analyzed via SEM, XRD, XPS and Hall measurements system, and the trend of carrier concentration with annealing time is discussed theoretically.

Download Full-text