Tuning of Energy Band Gaps in Ternary Semiconductors
2007 ◽
Vol 31
◽
pp. 164-166
◽
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The first principle investigations on electronic structure of ABC2 (A = Cd; B = Si, Ge, Sn; C= P, As) pnictides using the Tight Binding Linear Muffin Tin Orbital (TB-LMTO) method within the Atomic Sphere Approximation (ASA) is reported. Variation of Eg with pressure reveals the direct and pseudodirect natures of these compounds. CdSiP2 shows a pseudo direct and CdGeP2, CdSnP2, CdSiAs2, CdGeAs2 and CdSnAs2 show direct band gap natures. Semiconductor to metal transition at high pressures is observed. Metallisation volumes (V/Vo) m and pressures (Pm), bulk modulus (Bo) and its pressure derivative (Bo 1) are reported. Correlation connecting Bo and the unit cell volume (Vo) is established.
1995 ◽
Vol 09
(11n12)
◽
pp. 701-709
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Keyword(s):
2019 ◽
Vol 234
(9)
◽
pp. 581-586
Keyword(s):
Keyword(s):
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