Optical Properties of in-Doped Wurtzite ZnO Based on First-Principle

2011 ◽  
Vol 335-336 ◽  
pp. 32-35
Author(s):  
Fang Wei Xie ◽  
Pei Li ◽  
Li Qiang Zhang ◽  
Xiao Liang Wang ◽  
Huan Wang ◽  
...  

In-doped ZnO thin film has been found as one of the most promising materials in the optoelectronics, but its optical properties are rarely reported. We calculated optical band gaps and optical properties of Zn1-xInxO with different In doping by using first-principle. The results reveal that the lattice constants of Zn1-xInxO increase linearly with the doping increasing and Zn1-xInxO (x=0.125, x=0.25) crystal comes to be degenerate semiconductor with band gap reduced. The imaginary part of dielectric function has an increasing trend and the absorption capacity significantly increases in ultraviolet (UV) range after doping. Also there is an obvious red-shift in the absorption spectrum. The reflectivity and energy loss spectrum were investigated, too. The results can provide a theoretical reference for finding appropriate UV protective material.

2021 ◽  
pp. 2150346
Author(s):  
Wenchao Zhang ◽  
Feng Guan ◽  
Kuo Zhao ◽  
Min Jiang ◽  
Xunjun He ◽  
...  

The satisfactory performances of electronic structures, electronic and optical properties based on pure graphene and different components graphene of doping N, doping In and doping N–In were acquired by First-principle calculations. The pure graphene is an excellent semiconductor material with the zero gap. However, when graphene is doped with N, In and N–In, the gaps of energy will be opened. In the results of three different doping, the gap values of N, In and N–In are 0.2, 0.37 and 0.51 eV, respectively. In N-doped graphene, as the electrons leave the carbon, electrons are trapped by the nitrogen. On the contrary, electrons leave the indium atom and are picked up by the carbon for the In-doped graphene. When graphene is doped with N–In, more electrons (0.61 e) will be lost to nitrogen atoms compared with N-doped graphene (0.27 e) and more electrons (1.97 e) will be obtained to indium atoms compared with In-doped graphene (1.93 eV). After N, In, N–In doping, the overall strength of graphene absorption peaks will be weakened, which is more obvious for low-frequency peaks of graphene-doped with N and In. Pure graphene and N–In-doped graphene have similar absorption curves, but the difference between them is that the peak value of low-frequency absorption peak of N–In-doped graphene will be decreased compared with pure graphene. It is a satisfactory result to fully demonstrate that the band gap of graphene-doped system can be better regulated by the addition of nitrogen and indium atoms.


2021 ◽  
Vol 11 (1) ◽  
pp. 4
Author(s):  
Asmaa. S. El-Deeb ◽  
Marwa. M. Abdel Kader ◽  
Gamal. M. Nasr ◽  
Mona. A. Ahmed ◽  
Eman O. Taha

Samples of a new-fangled polymer of poly (Vinyl Alcohol) (PVA) doped with various concentrations of Lead (II) Titanate (PbTiO3, PT) were prepared using the casting method. The prepared samples were identified by Attenuated Total Reflection–Fourier Transform Infrared (ATR-FTIR). Peaks characteristic of PVA at 3280, 2917, 1690, 1425, 1324, 1081, and 839 cm−1 appeared; a peak indicating the presence of PbTiO3 also appeared at 713 cm−1. The interaction between PVA and PbTiO3 was confirmed by observing the change in IR absorption intensity. Optical properties in the UV-Vis range were investigated using an Ultraviolet Visible technique (UV-Vis). An enhancement in absorption capacity by the increasing PbTiO3 concentration was observed. Optical properties such as band gap energy, Urbach energy, and extinction coefficient indicate that addition of PbTiO3 into the PVA polymer induced variance in internal states by increasing the ratio of PbTiO3. Obtaining a UV-protective material derived from a PVA/PbTiO3 composite is the aim of this paper.


2017 ◽  
Vol 31 (23) ◽  
pp. 1750170 ◽  
Author(s):  
Farida Hamioud ◽  
A. A. Mubarak

First-principle calculations are performed using DFT as implemented in Wien2k code to compute the mechanical, electronic, optical and thermoelectric properties of NiYSn (Y = Zr and Hf) alloys. The computed lattice constants, bulk modulus and cohesive energy of these alloys at 0 K and 0 GPa are performed. NiZrSn and NiHfSn are found to be anisotropic and elastically stable. Furthermore, both alloys are confirmed to be thermodynamically stable by the calculated values of the standard enthalpy of formation. The Young’s and shear moduli values show that NiZrSn seems to be stiffer than NiHfSn. The optical properties are performed using the dielectric function. Some beneficial optoelectronic applications are found as exposed in the optical spectra. Moreover, the alloys are classified as good insulators for solar heating. The thermoelectric properties as a function of temperature are computed utilizing BoltzTrap code. The major charge carriers are found to be electrons and the alloys are classified as [Formula: see text]-type doping alloys.


2021 ◽  
Vol 299 ◽  
pp. 122139
Author(s):  
Yan Liu ◽  
Lanlan Li ◽  
Qiaoling Li ◽  
Xinghua Zhang ◽  
Zunming Lu ◽  
...  

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Nguyen Thi Han ◽  
Vo Khuong Dien ◽  
Ming-Fa Lin

AbstractLi2SiO3 compound exhibits unique electronic and optical properties. The state-of-the-art analyses, which based on first-principle calculations, have successfully confirmed the concise physical/chemical picture and the orbital bonding in Li–O and Si–O bonds. Especially, the unusual optical response behavior includes a large red shift of the onset frequency due to the extremely strong excitonic effect, the polarization of optical properties along three-directions, various optical excitations structures and the most prominent plasmon mode in terms of the dielectric functions, energy loss functions, absorption coefficients and reflectance spectra. The close connections of electronic and optical properties can identify a specific orbital hybridization for each distinct excitation channel. The presented theoretical framework will be fully comprehending the diverse phenomena and widen the potential application of other emerging materials.


2016 ◽  
Vol 244 ◽  
pp. 181-186 ◽  
Author(s):  
Hai-Xia Cheng ◽  
Xiao-Xu Wang ◽  
Yao-Wen Hu ◽  
Hong-Quan Song ◽  
Jin-Rong Huo ◽  
...  

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