Magnetron Sputtering Yield and Relative Factors

2011 ◽  
Vol 361-363 ◽  
pp. 1655-1663 ◽  
Author(s):  
Li Feng Wang ◽  
Ze Yan Wu ◽  
Zhi Jun Meng
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Target Material ◽  
Angle Of Incidence ◽  
Magnetron Sputter Deposition ◽  
Sputtering Yield ◽  
Energy And Momentum ◽  
Relative Factors

In this work, we mainly summarize the influence of the ion bombardment cathode (target) and relative factors of magnetron sputtering yield in production thin film. Magnetron sputter deposition permits a much wider selection of film materials, produces films with higher purity and better controlled composition, provides films with greater adhesive strength and homogeneity, and permits better control of deposit thickness. Unlike most other work described about sputtering yield, sputtering for thin-film production is performed using the plasma rather than a focused ion beam. When an ion with the energy hits a surface of the target, a small fraction of the energy and momentum of the incoming ion will, through lattice collisions, be reversed and may cause ejection of surface atoms (sputtering). The average number of the atoms ejected from the cathode surface per incident ion is called the sputtering yield. The sputtering yield varies with the target material, the kind of impinging ion, and the energy of that ion. At a given ion energy, The sputtering yield increases with increasing angle of incidence up to a maximum at an angle between 55 ° and 85 ° with respect to the surface normal [1, 3].

Fabrication of Dc-SQUID with As-Grown YBaCuO Thin Film by Focused Ion Beam

1990 ◽  
pp. 987-990
Author(s):  
M. Tanioku ◽  
K. Kuroda ◽  
K. Kojima ◽  
K. Hamanaka ◽  
Y. H. Hisaoka ◽  
...  
Keyword(s):  
Thin Film ◽  
Focused Ion Beam ◽  
Ion Beam

Characterization of FIB Damage in Silicon

1999 ◽  
Vol 5 (S2) ◽  
pp. 740-741 ◽  
Author(s):  
C.A. Urbanik ◽  
B.I. Prenitzer ◽  
L.A. Gianhuzzi ◽  
S.R. Brown ◽  
T.L. Shofner ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Target Material ◽  
Beam Current ◽  
Specimen Preparation ◽  
Transfer Energy ◽  
Transmission Electron ◽  
Preparation Techniques ◽  
Reactive Gas

Focused ion beam (FIB) instruments are useful for high spatial resolution milling, deposition, and imaging capabilities. As a result, FIB specimen preparation techniques have been widely accepted within the semiconductor community as a means to rapidly prepare high quality, site-specific specimens for transmission electron microscopy (TEM) [1]. In spite of the excellent results that have been observed for both high resolution (HREM) and standard TEM specimen preparation applications, a degree of structural modification is inherent to FIB milled surfaces [2,3]. The magnitude of the damage region that results from Ga+ ion bombardment is dependent on the operating parameters of the FIB (e.g., beam current, beam voltage, milling time, and the use of reactive gas assisted etching).Lattice defects occur as a consequence of FIB milling because the incident ions transfer energy to the atoms of the target material. Momentum transferred from the incident ions to the target atoms can result in the creation of point defects (e.g., vacancies, self interstitials, and interstitial and substitutional ion implantation), the generation of phonons, and plasmon excitation in the case of metal targets.

Optimization Based Geometric Modeling of Nano/Micro Scale Ion Milling of Organic Materials

2009 ◽  
Author(s):  
Jing Fu ◽  
Sanjay B. Joshi
Keyword(s):  
Geometric Modeling ◽  
Focused Ion Beam ◽  
Organic Materials ◽  
Ion Beam ◽  
Target Material ◽  
Milling Process ◽  
Ion Milling ◽  
Flexible Tool ◽  
Water Ice ◽  
Micro Scale

Recently, Focused Ion Beam (FIB) instruments have begun be applied to organic materials such as polymers and biological systems. This provides a novel tool for sectioning biological samples for analysis, or microfabrication with environment friendly materials. The modeling of nano/micro scale geometry accurately sculptured by FIB milling is crucial for generating the milling plan and process control, and for computer simulation for prediction and visualization of the milled geometry. However, modeling of the ion milling process on compound materials, especially for high aspect ratio feature, is still difficult due to the complexity of target material, as well as multiple physical and chemical interactions involved. In this study, a comprehensive model of ion milling with organic targets is presented to address the challenges using a simulation based approach. This platform has also been validated by milling different features on water ice in a cryogenic environment, and the simulation and experiment results show great consistency. With the proliferation of nanotechnology to biomedical and biomaterial domains, the proposed approach is expected to be a flexible tool for various applications involving novel and heterogeneous milling targets.

Temperature Measurement by Using Metal Thin Film Thermocouples

2003 ◽  
Author(s):  
Koji Miyazaki ◽  
Hiroshi Tsukamoto ◽  
Takahiro Miike ◽  
Toshiaki Takamiya
Keyword(s):  
Thin Film ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Glass Plate ◽  
Mean Free Path ◽  
Dimensional Structure ◽  
Measured Temperature ◽  
Metal Thin Film ◽  
Thin Film Thermocouples ◽  
Thermocouple Junction

We fabricate metal thin film thermocouples (TFTCs). Au-Pt, Cu-Ni, and W-Ni are deposited on a glass plate using standard thin film processes. The dimension of thermocouple junction is 300μm × 300μm. The thermoelectric powers of TFTCs are different from those of bulk because diffusion of electrons is restricted by the very thin film. The film thickness of TFTCs is of the same order as the mean free path of electrons. However TFTCs are still useful for temperature measurements because the thermoelectric voltage is proportional to measured temperature at thermocouple junction. The response time of Au-Pt TFTCs is about 30ns when the surface of the glass is heated by a YAG pulsed laser. The result compares favorably with measurements by a thermoreflectance method. We also describe W-Ni nano-TFTCs fabricated by Focused Ion Beam for the measurement of temperature distribution in a sub-micron area. In order to reduce the size of the TFTCs we employ a 3-dimensional structure.

Fracture Toughness of Titanium - Titanium Nitride Multi-Layer Thin Film

2008 ◽  
Author(s):  
Mohan Prasad Manoharan ◽  
Amit Desai ◽  
Amanul Haque
Keyword(s):  
Thin Film ◽  
Fracture Toughness ◽  
Titanium Nitride ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
New Class ◽  
Tin Coatings ◽  
Film Specimen ◽  
Cantilever Bending ◽  
Layer Thin Film

Thin film specimens of titanium - titanium nitride multilayer erosion resistant coating were prepared using liftout technique in Focused Ion Beam - Scanning Electron Microscope (SEM). The fracture toughness of the thin film specimen was measured in situ using a cantilever bending experiment in SEM to be 11.33 MPa/m0.5, twice as much as conventional TiN coatings. Ti–TiN multi-layer coatings are part of a new class of advanced erosion resistant coatings and this paper discusses an experimental technique to measure the fracture toughness of these coatings.

A Membrane Deflection Fracture Experiment to Investigate Fracture Toughness of Freestanding MEMS Materials

2003 ◽  
Vol 795 ◽  
Author(s):  
H. D. Espinosa ◽  
B. Peng
Keyword(s):  
Thin Film ◽  
Fracture Toughness ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
National Laboratory ◽  
Argonne National Laboratory ◽  
Mean Value ◽  
Advanced Materials ◽  
Ultrananocrystalline Diamond ◽  
Membrane Deflection

ABSTRACTThis paper presents a novel Membrane Deflection Fracture Experiment (MDFE) to investigate the fracture toughness of MEMS and other advanced materials in thin film form. It involves the stretching of freestanding thin-film membranes, in a fixed-fixed configuration, containing pre-existing cracks. The fracture behavior of ultrananocrystalline diamond (UNCD), a material developed at Argonne National Laboratory, is investigated to illustrate the methodology. When the fracture initiates from sharp cracks, produced by indentation, the fracture toughness was found to be 4.7 MPa m1/2. When the fracture initiates from blunt notches with radii about 100 nm, machined by focused ion beam (FIB), the mean value of the apparent fracture toughness was found to be 7.2 MPa m1/2. Comparison of these two values, using the model proposed by Drory et al. [9], provides a correction factor of 2/3, which corresponds to a mean value of ρ/2x=1/2.

Etching characteristics of TiNi thin film by focused ion beam

2004 ◽  
Vol 225 (1-4) ◽  
pp. 54-58 ◽  
Author(s):  
D.Z. Xie ◽  
B.K.A. Ngoi ◽  
Y.Q. Fu ◽  
A.S. Ong ◽  
B.H. Lim
Keyword(s):  
Thin Film ◽  
Focused Ion Beam ◽  
Ion Beam

In-Situ Tem Characterization of Whiskers on Al Electrodes for Thin-Film Transistors

1996 ◽  
Vol 441 ◽  
Author(s):  
K. Tsujimoto ◽  
S. Tsuji ◽  
H. Saka ◽  
K. Kuroda ◽  
H. Takatsuji ◽  
...  
Keyword(s):  
Thin Film ◽  
High Voltage ◽  
Focused Ion Beam ◽  
Liquid Crystal Display ◽  
Ion Beam ◽  
Thin Film Transistor ◽  
Dark Field ◽  
Growth Stages ◽  
In Situ Tem

AbstractThe recent attention paid to stress migration of aluminum (Al) electrodes in thin-film transistor liquid crystal display (TFT-LCD) applications indicates that wiring materials with low electrical resistivities are of considerable interest for their potential use in higher-resolution displays. In this paper, we firstly describe how as-grown Al whiskers on Al electrodes fabricated on a LCD-grade glass substrate can be characterized by means of a high-voltage transmission electron microscope (HV-TEM) operated at 1 MV. The whiskers ranging from 300 to 400 nm in diameter are sufficient to be transparent to high-voltage electrons. This allows detailed observation of whisker characteristics such as its morphology and crystallography. In most cases, the as-grown Al whiskers in our study had straight rod shapes, and could be regarded as single crystals. Secondly, we report on the in-situ fabrication and observation of Al whiskers at elevated temperature with the HV-TEM. Since relatively thick TEM samples (up to about 1 mm) can be set on a sample holder in the HV-TEM, various growth stages of Al whiskers can be investigated under various heating conditions. Finally, we demonstrate a TEM sample preparation method for the cross-section of an individual Al whisker, using focused ion beam (FIB) etching. This technique makes it possible to reduce the thickness of an Al whisker close to the root. Both bright- and dark-field TEM images provide nanostructural information on the whisker/Al thin-film interface.

Sign in / Sign up

Export Citation Format

Share Document