Large-Area Synthesis and Microstructural Investigations of Silicon Nanowires and Te/Bi2Te3-Si Core-Shell Structures

2011 ◽  
Vol 364 ◽  
pp. 243-247
Author(s):  
Inn Khuan Ng ◽  
Kuan Ying Kok ◽  
Siti Salwa Zainal Abidin ◽  
Nur Ubaidah Saidin ◽  
Thye Foo Choo
Keyword(s):  
Silicon Nanowires ◽  
Silicon Nanowire ◽  
Growth Conditions ◽  
Shell Structures ◽  
Core Shell ◽  
Redox Potentials ◽  
Large Area ◽  
Aspect Ratios ◽  
P Type ◽  
Microstructural Studies

Large-area randomly-oriented silicon nanowires (SiNWs) were synthesized using Au-coated p-type Si (100) substrates via the solid-liquid-solid (SLS) process under different growth conditions. Microstructural studies on the NWs produced showed that straight crystalline nanowires of large aspect ratios were generally obtained at a growth temperature of 1000°C along with some worm-like amorphous structures. Large-area vertically aligned silicon nanowire (SiNW) arrays on p-type (001) Si substrates were also synthesized in an aqueous solution containing AgNO3 and HF by self-selective electroless etching. Diameters of the SiNWs produced from both methods varied from 50 nm to 350 nm and their lengths generally extended from several to approximately a few tens of µm depending on the growth conditions used. Te-Si and Bi2Te3-Si core-shell structures were subsequently obtained via galvanic displacement of SiNWs in acidic HF electrolytes containing HTeO2+ and Bi3+/HTeO2+ ions. The reactions were basically a nanoelectrochemical process due to the difference in redox potentials between the materials. The modified SiNWs of core-shell structures had roughened surface morphologies and, therefore, higher surface-to-bulk ratios compared to unmodified SiNWs. They should have potential applications in sensors, photovoltaic and thermoelectric nanodevices. Microstructural studies on the SiNWs and core-shell structures produced are presented using various microscopy, diffraction and probe-based techniques for characterization.

Polymer-assisted synthesis of aligned amorphous silicon nanowires and their core/shell structures with Au nanoparticles

2004 ◽  
Vol 397 (1-3) ◽  
pp. 128-132 ◽  
Author(s):  
Xing-bin Yan ◽  
Tao Xu ◽  
Shan Xu ◽  
Gang Chen ◽  
Qun-ji Xue ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Silicon Nanowires ◽  
Au Nanoparticles ◽  
Shell Structures ◽  
Core Shell

Synthesis of Silicon Nanowire Arrays by Metal-Assisted Chemical Etching in Aqueous NH4HF2 Solution

2012 ◽  
Vol 21 ◽  
pp. 109-115 ◽  
Author(s):  
S. Naama ◽  
T. Hadjersi ◽  
G. Nezzal ◽  
L. Guerbous
Keyword(s):  
Silicon Nanowires ◽  
Chemical Etching ◽  
Silicon Nanowire ◽  
Nanowire Arrays ◽  
Etching Time ◽  
Silicon Nanowire Arrays ◽  
Peak Intensity ◽  
One Step ◽  
Etching Parameters ◽  
P Type

One-step metal-assisted electroless chemical etching of p-type silicon substrate in NH4HF2/AgNO3 solution was investigated. The effect of different etching parameters including etching time, temperature, AgNO3 concentration and NH4HF2 concentration were investigated. The etched layers formed were investigated by scanning electron microscopy (SEM) and Photoluminescence. It was found that the etched layer was formed by well-aligned silicon nanowires. It is noted that their density and length strongly depend on etching parameters. Room temperature photoluminescence (PL) from etched layer was observed. It was observed that PL peak intensity increases significantly with AgNO3 concentration.

Fabrication of Large-Area Silicon Nanowire Arrays Based on Electroless Metal Deposition

2011 ◽  
Vol 194-196 ◽  
pp. 598-601
Author(s):  
Xuan Liu ◽  
Li Jie Zhao ◽  
Ping Feng
Keyword(s):  
Reaction Time ◽  
Silicon Nanowires ◽  
Silicon Nanowire ◽  
Metal Deposition ◽  
Wire Diameter ◽  
Nanowire Arrays ◽  
Metal Particles ◽  
Large Area ◽  
Average Growth ◽  
Silicon Nanowire Arrays

Electroless metal deposition is a simple, low-cost and effective method for fabricating silicon nanowire arrays and has been used widely in micro electromechanical industry. In this paper, large-area silicon nanowire arrays are prepared successfully with mixed AgNO3and HF solution by this method at normal temperature and pressure. It has been proved the best equality of silicon nanowires can be obtained at the concentration ratio of 0.02 mol/l: 5mol/l for AgNO3and HF and 1h reaction time. The influence of nano metal particles on the growth, the wire diameter, the distribution and the array of silicon nanowires are analyzed. Experimental results show the distribution and wire diameter of silicon nanowires can be controlled effectively by nano metal particles deposited on silicon wafers. The length of silicon nanowires increases with the reaction time and the average growth velocity is predicted to be 0.5～0.7μm/min. The equality of silicon nanowires with nano Au particles is better than those with nano Pt particles. The reaction mechanism of preparing large-area silicon nanowire arrays is analyzed as the result of the deoxidization of silver ion and the removal of the oxidized silicon solution by reacting with HF.

FABRICATION OF LARGE-AREA SILICON NANOWIRE ARRAYS FOR SOLAR CELLS

2012 ◽  
Vol 11 (06) ◽  
pp. 1240026
Author(s):  
WUXING LAI ◽  
GUOQIANG XU ◽  
WEI ZHANG ◽  
TIELIN SHI
Keyword(s):  
Solar Cells ◽  
Aspect Ratio ◽  
Silicon Wafer ◽  
Low Cost ◽  
Silicon Nanowire ◽  
Large Area ◽  
Water Contact ◽  
Potential Implication ◽  
Silicon Nanowire Arrays ◽  
P Type

In this paper, a simple, low-cost and efficient method was adopted to fabricate large-area Si nanowire ( SiNW ) arrays by inserting the p-type (100) silicon wafer into aqueous HF + AgNO3 solution for a certain time at room temperature. Surface of the silicon wafer with high aspect ratio SiNW shows the characteristics of low-reflection as low as 5% in the 450–800 nm wavelength range, especially less than 1% after etching for 60 min. The surface also exhibits super-hydrophobicity with water contact angle up to 150°. We investigated the relationship between the etching duration and aspect ratio of the SiNW systematically and demonstrated that the aspect ratio of the SiNW can be controlled. The antireflection surface shows a potential implication in increasing the conversation efficiency for solar cells, and the self-cleaning properties will further enhance the resistance to environment conditions for a long-life work.

Dual-ligand mediated one-pot self-assembly of Cu/ZnO core/shell structures for enhanced microwave absorption

RSC Advances ◽  
2016 ◽  
Vol 6 (48) ◽  
pp. 41724-41733 ◽  
Author(s):  
Yi-Feng Cheng ◽  
Han Bi ◽  
Chao Wang ◽  
Qi Cao ◽  
Wenling Jiao ◽  
...  
Keyword(s):  
Microwave Absorption ◽  
Self Assembly ◽  
Shell Structures ◽  
Core Shell ◽  
One Pot ◽  
Aspect Ratios ◽  
The One

A facile one-pot method has developed to assemble Cu/ZnO core/shell nanocrystals with different aspect ratios for enhanced microwave absorption. Besides, the one-pot method has shown the appreciable yields and no cumbersome multistep operations.

Effect of Etching Temperature on the Growth of Silicon Nanowires

2011 ◽  
Vol 138-139 ◽  
pp. 1082-1088 ◽  
Author(s):  
Yan Li Liu ◽  
Jian Zhang
Keyword(s):  
Growth Rate ◽  
Surface Morphology ◽  
Temperature Dependence ◽  
Silicon Nanowires ◽  
Room Temperature ◽  
Aspect Ratios ◽  
C 30 ◽  
C 50 ◽  
P Type

The effects of different etching temperatures (near room temperature) on the length and surface morphology of SiNWs were reported in this paper. The studies on temperature dependence of SiNWs growth rate were carried out at 20 °C, 30 °C, 40 °C, 50 °C, 60 °C, and 70 °C for n-type and p-type substrates. The results suggested that the SiNWs length could be controlled easily by the change of the etching temperature. Superlong SiNWs were also fabricated by this technique. The superlong SiNWs had the length more than 400 μm and the aspect ratios were about 2000-20000, which could be applied in nanosensors and interconnection.

scholarly journals Fabrication of Needle-Like Silicon Nanowires by Using a Nanoparticles-Assisted Bosch Process for Both High Hydrophobicity and Anti-Reflection

Micromachines ◽  
2021 ◽  
Vol 12 (9) ◽  
pp. 1009
Author(s):  
Zengxing Zhang ◽  
Guohua Liu ◽  
Kaiying Wang
Keyword(s):  
Silicon Nanowires ◽  
Silicon Nanowire ◽  
Nanowire Array ◽  
Film Deposition ◽  
Au Nps ◽  
Aspect Ratios ◽  
Hydrophobic Behavior ◽  
Hydrophobic Chemical ◽  
Wave Range ◽  
Reflection Characteristics

In this work, a modified Bosch etching process is developed to create silicon nanowires. Au nanoparticles (NPs) formed by magnetron sputtering film deposition and thermal annealing were employed as the hard mask to achieve controllable density and high aspect ratios. Such silicon nanowire exhibits the excellent anti-reflection ability of a reflectance value of below 2% within a broad light wave range between 220 and 1100 nm. In addition, Au NPs-induced surface plasmons significantly enhance the near-unity anti-reflection characteristics, achieving a reflectance below 3% within the wavelength range of 220 to 2600 nm. Furthermore, the nanowire array exhibits super-hydrophobic behavior with a contact angle over ~165.6° without enforcing any hydrophobic chemical treatment. Such behavior yields in water droplets bouncing off the surface many times. These properties render this silicon nanowire attractive for applications such as photothermal, photocatalysis, supercapacitor, and microfluidics.

Improving yields in bridging silicon nanowires with rational control of the bridge characteristics

2013 ◽  
Vol 1551 ◽  
pp. 111-116
Author(s):  
Jin Yong Oh ◽  
M. Saif Islam
Keyword(s):  
Gold Nanoparticles ◽  
Silicon Nanowires ◽  
Deposition Time ◽  
Silicon Nanowire ◽  
Large Area ◽  
Surface Deposition ◽  
Rational Control ◽  
Poor Adhesion

ABSTRACTWe present a practical technique for fabricating silicon nanowire bridges on pre-patterned Si electrodes arrays. Silicon nanowires, catalyzed by gold nanoparticles, were grown on silicon electrodes from HF treated Au colloid as well as on electrodes treated with poly-L-lysine. Negligible growth was observed on untreated substrates due to poor adhesion of gold nanoparticles to the hydrogen terminated Si surface. In contrast, the treatments significantly increased occurrence of silicon nanowire bridges, which can be attributed to improved deposition of gold nanoparticles on the surface. Deposition time and concentrations of colloids also affected the occurrence of SiNW bridges. These results indicate that our techniqute for fabricating nanowire bridge arrays will be useful for large-area nanowire applications.

Constructing film composites of silicon nanowires@CdS quantum dot arrays with ameliorated photocatalytic performance

2018 ◽  
Vol 42 (17) ◽  
pp. 14096-14103 ◽  
Author(s):  
Xin Lin ◽  
Shao-Hai Li ◽  
Kang-Qiang Lu ◽  
Zi-Rong Tang ◽  
Yi-Jun Xu
Keyword(s):  
Quantum Dot ◽  
Silicon Nanowires ◽  
Photocatalytic Performance ◽  
Silicon Nanowire ◽  
Nanowire Arrays ◽  
Type Silicon ◽  
Silicon Nanowire Arrays ◽  
Cds Quantum Dot ◽  
P Type ◽  
Film Composites

The film composites of n-type CdS QD decorated p-type silicon nanowire arrays are assembled toward H2 evolution with improved photoactivity and photostability.

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