Preparation and Characterization of Ca-Containing Anodic Alumina

2008 ◽  
Vol 41-42 ◽  
pp. 57-60
Author(s):  
Li Ping He ◽  
Zong Zhang Chen ◽  
Yiu Wing Mai

Ca-containing anodic alumina (CAA) has been successfully prepared by anodizing Al film in an alkali solution at a constant voltage and subsequently electro-depositing calcium salts on and into anodic alumina. This paper investigated the anodic behavior of Al, deposition behavior of calcium salt, and microstructure of CAA. The results show that the anodic behavior of Al in Na3PO4 electrolyte can be described as three continuous stages as of initial growth of the compact barrier layer, formation of porous alumina and further development of its pores and columnar holes. It is also found that cell voltage of electro-deposition process plays an important role at the deposition behavior of calcium slat and the microstructure of Ca-containing anodic alumina (CAA). The higher the cell voltage is, the faster the deposition rate, and the more calcium being deposited at the surface of anodic alumina and into the columnar holes or at the walls of the holes of anodic alumina. It is expected that Ca-containing anodic alumina films are promising substrates for fabricating functional bio-coatings for prosthetic applications.

2018 ◽  
Vol 346 ◽  
pp. 48-52 ◽  
Author(s):  
Shi-Yuan Zhang ◽  
Qin Xu ◽  
Zhi-Jun Wang ◽  
Sheng-Zhen Hao ◽  
Chun-Xin Sun ◽  
...  

2006 ◽  
Vol 320 ◽  
pp. 159-162 ◽  
Author(s):  
Takeshi Miki ◽  
Kaori Nishizawa ◽  
Kazuyuki Suzuki ◽  
Kazumi Kato

To obtain porous alumina films, the precursor sol was prepared by hydrolysis of Al isopropoxide and then mixing with poly(ethylene glycol) (PEG). The porous alumina films were fabricated by dip-coating technique on glass substrates and heating at 500 °C. The film was composed of nano sized particles (30-50 nm). The maximum thickness of the film prepared by one-run dip-coating was ca. 1000 nm. The film had humidity-sensitive electrical resistance at room temperature.


2006 ◽  
Vol 9 (1-3) ◽  
pp. 337-340 ◽  
Author(s):  
H.Y. Zhou ◽  
S.C. Qu ◽  
Z.G. Wang ◽  
L.Y. Liang ◽  
B.C. Cheng ◽  
...  

2006 ◽  
Vol 515 (4) ◽  
pp. 1548-1551 ◽  
Author(s):  
Assen Girginov ◽  
Angelina Popova ◽  
Ivan Kanazirski ◽  
Alexander Zahariev

Author(s):  
J.B. Posthill ◽  
R.P. Burns ◽  
R.A. Rudder ◽  
Y.H. Lee ◽  
R.J. Markunas ◽  
...  

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.


1989 ◽  
Vol 136 (11) ◽  
pp. 3518-3525 ◽  
Author(s):  
O. J. Murphy ◽  
J. S. Wainright ◽  
J. J. Lenczewski ◽  
J. H. Gibson ◽  
M. W. Santana

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