Long-Chain Organofunctional Silanes: Synthesis and Surface Derivatization

2011 ◽  
Vol 415-417 ◽  
pp. 1829-1836 ◽  
Author(s):  
You Lin Pan ◽  
Barry Arkles ◽  
Eric Eisenbraun ◽  
Alain Kaloyeros
Keyword(s):  
Silicon Dioxide ◽  
Photoelectron Spectroscopy ◽  
Titanium Metal ◽  
Self Assembled Monolayer ◽  
X Ray ◽  
Molecular Monolayers ◽  
Reflection Absorption Infrared Spectroscopy ◽  
Organofunctional Silanes ◽  
Titanium Silicon ◽  
Long Chain

A series of organofunctional long-chain alkylfunctional silanes have been synthesized for the purpose of derivatization of micro- and nanoparticles and generation of molecular monolayers and films on the substrates. 11-bromoundecylsilane and 1, 10-disiladecane are evaluated to interact with a variety of clean hydrogenated metal and metalloid including titanium, silicon and silicon dioxide. The surface of those treated substrates has been analyzed by X-ray photoelectron spectroscopy (XPS) and reflection-absorption infrared spectroscopy (RAIRS). Our preliminary results indicate that self-assembled monolayer has been well formed on titanium metal and silicon wafer, minimally on silicon-dioxide. The discussion of experimental results is also provided.

Low Temperature Nitridatio of SiO2 Films using a Catalytic-CVD System

2000 ◽  
Vol 611 ◽  
Author(s):  
Akira Izumi ◽  
Hidekazu Sato ◽  
Hideki Matsumura
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Catalytic Decomposition ◽  
Catalytic Chemical Vapor Deposition ◽  
Sio2 Films ◽  
X Ray

ABSTRACTThis paper reports a procedure for low-temperature nitridation of silicon dioxide (SiO2) surfaces using species produced by catalytic decomposition of NH3 on heated tungsten in catalytic chemical vapor deposition (Cat-CVD) system. The surface of SiO2/Si(100) was nitrided at temperatures as low as 200°C. X-ray photoelectron spectroscopy measurements revealed that incorporated N atoms are bound to Si atoms and O atoms and located top-surface of SiO2.

X-Ray Photoelectron Spectroscopy Study of a Self-Assembled Monolayer of Thiophene Thiol

2000 ◽  
Vol 39 (Part 1, No. 1) ◽  
pp. 252-255 ◽  
Author(s):  
Haruki Okawa ◽  
Tatsuo Wada ◽  
Hiroyuki Sasabe ◽  
Kotaro Kajikawa ◽  
Kazuhiko Seki ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Spectroscopy Study ◽  
Self Assembled Monolayer ◽  
X Ray ◽  
Self Assembled

Interaction of Hydrogen on a Lanthanum hexaboride 111 Surface

2009 ◽  
Vol 3 (1) ◽  
Author(s):  
J. Cameli ◽  
A. Tillekaratne ◽  
M. Trenary
Keyword(s):  
Photoelectron Spectroscopy ◽  
Alternative Energy ◽  
Bond Formation ◽  
Lanthanum Hexaboride ◽  
Current Level ◽  
X Ray ◽  
Low Energy Electron Diffraction ◽  
Reflection Absorption Infrared Spectroscopy ◽  
Low Energy Electron ◽  
Lower Temperature

In order to sustain society's current level of energy consumption and prevent irreversible climate degradation due to the greenhouse effect an alternative energy carrier is required. The aim of this experiment was to determine the conditions under which a lanthanum hexaboride (LaB6) surface would form boron-hydrogen (B-H) bonds when exposed to hydrogen. Reflection absorption infrared spectroscopy (RAIRS) was used to confirm formation of bonds and X-ray photoelectron spectroscopy (XPS) and low energy electron diffraction (LEED) were used to characterize the surface. Upon completion of the experiment no B-H bonds were found to form under the conditions tested. However, it is believed that the bond formation may have been impeded by tungsten contamination of the surface or may have been due to the instability of the B-H bond. A lower temperature could be required for their formation.

Impurities in SiO2: Atomic States of Phosphorus and Arsenic

1986 ◽  
Vol 82 ◽  
Author(s):  
H. E. Rhodes ◽  
G. Apai
Keyword(s):  
Binding Energy ◽  
Silicon Dioxide ◽  
Photoelectron Spectroscopy ◽  
Binding Energies ◽  
Core Level ◽  
X Ray ◽  
Impurity Atoms ◽  
Atomic States ◽  
Energy Signal ◽  
State 1

ABSTRACTWe have studied the atomic states of arsenic (As) and phosphorus (P) in SiO2 using X-ray photoelectron spectroscopy (XPS). Silicon dioxide implanted with As or P shows multiple XPS core level peaks corresponding to the impurity atoms located in two distinct atomic sites. The binding energies of the two arsenic 3d core levels occur at 45.8 and 42.3 eV and the two phosphorus 2p core levels occur at 134.7 and 130.3 eV. When the implanted oxides are annealed in an oxygen ambient between 900°C and 950°C, only the highbinding- energy peaks of P and As are observed. This identifies the highbinding- energy core level peaks as being associated with the impurity (P or As) on silicon sites. Annealing in nitrogen at 950° C results in an increase in the low-binding-energy signal. The low-binding-energy peaks are associated with the impurity (P or As) bonded to silicon neighbors. The relative amounts of dopants in silicon and oxygen sites depend on ambient purity and processing details. Reference to previous work shows that the presence of As or P on silicon sites in SiO2 corresponds to a fast diffusing state whereas As or P on oxygen sites corresponds to a slow diffusing state [1].

Corrosion Inhibition of Gemini Surfactant for Copper in 3.5% NaCl

2014 ◽  
Vol 936 ◽  
pp. 1125-1131 ◽  
Author(s):  
Kun Cao ◽  
Hu Yuan Sun ◽  
Bao Rong Hou
Keyword(s):  
Photoelectron Spectroscopy ◽  
Gemini Surfactant ◽  
Inhibition Efficiency ◽  
Copper Surface ◽  
Optimum Concentration ◽  
Nacl Solution ◽  
X Ray ◽  
Head Groups ◽  
Alkyl Ammonium ◽  
Long Chain

A new gemini surfactant containing long chain alkyl ammonium headgroups have been used as corrosion inhinbitor for copper in 3.5% NaCl solution. The weight loss and electrochemical methods results showed that presence of inhibitor greatly decrease corrosion rate, gemini surfactant acted as an excellent corrosion inhibitor with inhibition efficiency greater than 96% at an optimum concentration of 30 mg·L-1. X-ray photoelectron spectroscopy reveals that the gemini surfactant molecules adsorb onto the copper surface through the two ammonium head groups (N+).

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