The Influence of Total and Oxygen Partial Pressures on Structure and Hydrophilic Property of TiO2 Thin Films Deposited by Reactive DC Magnetron Sputtering

TiO2 thin films have been deposited by reactive DC magnetron sputtering technique to study the effect of total pressure and oxygen partial pressure on structure and hydrophilic properties. The crystal structure and hydrophilic property was measured by XRD and contact angle meter, respectively. The results showed that the films were composed of pure rutile and mixed of anatase/rutile structure dependent on the total pressure and oxygen partial pressure. It was found that all films can perform hydrophilic property. In case of high total pressure, the films showed superhydrophilic property, whereas the films deposited under various oxygen partial pressures with fixed total pressure were all films exhibit superhydrophilic property.

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Oxygen Partial Pressure Dependence of the Properties of TiO2 Thin Films Deposited by DC Reactive Magnetron Sputtering

Procedia Engineering ◽

10.1016/j.proeng.2012.01.1326 ◽

2012 ◽

Vol 32 ◽

pp. 676-682 ◽

Cited By ~ 32

Author(s):

M. Horprathum ◽

P. Eiamchai ◽

P. Chindaudom ◽

A. Pokaipisit ◽

P. Limsuwan

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Oxygen Partial Pressure ◽

Partial Pressure ◽

Pressure Dependence ◽

Reactive Magnetron Sputtering ◽

Reactive Magnetron ◽

Tio2 Thin Films ◽

Dc Reactive Magnetron Sputtering

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OPTICAL AND ELECTRICAL PROPERTIES OF VANADIUM NITRIDE THIN FILMS

International Journal of Modern Physics B ◽

10.1142/s0217979299000692 ◽

1999 ◽

Vol 13 (07) ◽

pp. 833-839 ◽

Cited By ~ 4

Author(s):

M. GHANASHYAM KRISHNA ◽

A. K. BHATTACHARYA

Keyword(s):

Thin Films ◽

Partial Pressure ◽

Total Pressure ◽

Optical Constants ◽

Vanadium Nitride ◽

Nitrogen Partial Pressure ◽

Dc Magnetron Sputtering ◽

Partial Pressures ◽

Similar Dependence ◽

Quartz Substrates

Vanadium nitride thin films have been deposited on to quartz substrates by dc magnetron sputtering at two different total pressures and a series of nitrogen partial pressures. The spectral transmittance of these films, in the region 350 to 1500 nm, is strongly dependent on the nitrogen partial pressure during sputtering and relatively insensitive to total pressure. The films became more transparent as the nitrogen partial pressure was decreased at a constant total pressure. The optical constants, refractive index and extinction coefficient, exhibited a similar dependence on the nitrogen partial pressure. The sheet resistivity of the films decreased with increasing nitrogen partial pressure. The values of resistivity indicate that the films are semiconducting rather than metalic.

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Characterization of Ruo2 Films Prepared by Rf Reactive Magnetron Sputtering

MRS Proceedings ◽

10.1557/proc-541-141 ◽

1998 ◽

Vol 541 ◽

Author(s):

Li-jian Meng ◽

M.P. dos Santos

Keyword(s):

Magnetron Sputtering ◽

Oxygen Partial Pressure ◽

Partial Pressure ◽

Total Pressure ◽

High Stress ◽

Reactive Magnetron Sputtering ◽

Reactive Magnetron ◽

Low Oxygen ◽

X Ray Diffraction ◽

Partial Pressures

AbstractRuthenium dioxide films have been prepared by rf reactive magnetron sputtering at different oxygen partial pressures and total sputtering pressures. The films have been characterized by scanning electron microscopy, X-ray diffraction and electrical conductivity. The films prepared at low oxygen partial pressure and total pressure show a strong preferred orientation along the [110] direction. As both pressures increased, the peak intensity decreases. All the films are subject to a compressive stress. As the total pressure is decreased and the oxygen partial pressure is increased, the stress increases. When the total pressure is lower than 6 × 10−3 mbar and the oxygen partial pressure is higher than 1 × 103 mbar, the films peeled off automatically from the substrate because of the high stress. The films prepared at high oxygen partial pressure and high total pressure have a rough surface and those prepared at low pressure show smooth surface. In this paper, these phenomena have been discussed. In addition, the electrical properties of the films are also discussed.

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