Influence of Substrate Temperature on Some Properties of Close-Spacing Thermally Evaporated CdTe Thin Films

2008 ◽  
Vol 55-57 ◽  
pp. 881-884 ◽  
Author(s):  
Thitinai Gaewdang ◽  
N. Wongcharoen ◽  
P. Siribuddhaiwon ◽  
N. Promros
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Suitable Condition ◽  
Xrd Analysis ◽  
Thermal Evaporation Method ◽  
Cdte Thin Films ◽  
Influence Of Substrate ◽  
Substrate Temperatures ◽  
Deposited Films ◽  
Resistance Value

CdTe thin films with different substrate temperatures have been deposited by thermal evaporation method on glass substrate in vacuum chamber having low pressure about 3.0x10-5 mbar. According to XRD analysis, CdTe thin films are polycrystalline belonging to cubic structure with preferential orientation of (111) plane. The strongest peak intensity of XRD is observed in the film prepared with substrate temperature of 150°C. Band gap and band tail values of the as-deposited films were evaluated from the optical transmission spectra. The lowest dark sheet resistance value was obtained from the film prepared with substrate temperature of 150°C as well. Regarding to our experimental results, it may be indicated that the 150°C substrate temperature is the most suitable condition in preparing CdTe thin films for solar cell applications.

Effect of Annealing and Substrate Temperatures on the Structural Properties of In2Te3 Thin Films

2018 ◽  
Vol 24 (8) ◽  
pp. 5611-5613
Author(s):  
Vallem Sowjanya ◽  
Kasturi V Bangera ◽  
G. K Shivakumar
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Xrd Analysis ◽  
X Rays ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
Glass Substrates ◽  
Indium Telluride ◽  
Substrate Temperatures

Indium telluride (In2Te3) thin films were synthesized on glass substrates using thermal evaporation method under the vacuum of the order of 10−6 torr. The role of annealing and substrate temperatures on the growth of In2Te3 thin films was investigated. The structure, surface morphology, and composition of films were studied by X-ray diffraction (XRD), scanning electron microscope (SEM) and energy dispersive analysis of X-rays (EDAX), respectively. The as-deposited films at substrate temperature 25 °C and 150 °C were found to be non-stoichiometric. The films deposited at 150 °C substrate temperature and post-annealed at 300 °C for 1 h were stoichiometric in composition and the XRD analysis revealed that these films were cubic in nature with preferred orientation along (5 1 1) plane. The electrical studies revealed that the films were p-type in nature. In addition, the resistivity and optical band gap of optimized films found to be 33 × 10−2 Ω-cm and 0.99 eV, respectively.

Influence of Substrate Temperature in Plasma Assisted Pulsed Laser Deposition of Hydroxyapatite Thin Films

2006 ◽  
Vol 514-516 ◽  
pp. 1029-1033
Author(s):  
Eugenio Luís Solla ◽  
Jacinto P. Borrajo ◽  
Pio González ◽  
Julia Serra ◽  
Stefano Chiussi ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Rf Discharge ◽  
Rf Plasma ◽  
X Ray Diffraction ◽  
Influence Of Substrate ◽  
Substrate Temperatures

The bioactive properties of hydroxyapatite (HA) are well known in the implant industry and coatings of HA have been used to enhance the adhesion of living tissue to metal prostheses. Pulsed laser deposition (PLD) in a water vapour atmosphere is an appropriate method for the production of crystalline HA coatings. In this work the effect of RF plasma on thin films of HA grown by PLD at different substrate temperatures has been studied. The physicochemical properties of the films were studied by Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS), showing that the incorporation of RF discharge in the deposition chamber can lead to changes in the crystallinity and deposition rate of the films but substrate temperature still plays the most important role.

EFFECT OF SUBSTRATE TEMPERATURE ON THE GROWTH OF COPPER OXIDE THIN FILMS DEPOSITED BY PULSED LASER DEPOSITION TECHNIQUE

2018 ◽  
Vol 25 (02) ◽  
pp. 1850053 ◽  
Author(s):  
MUHAMMAD KAIF SHABBIR ◽  
SHAZIA BASHIR ◽  
QAZI SALMAN AHMED ◽  
NAZISH YASEEN ◽  
SOHAIL ABDUL JALIL ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Copper Oxide ◽  
Growth Temperature ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Oxide Thin Films ◽  
Vis Spectroscopy ◽  
Substrate Temperatures ◽  
Deposited Films

The effect of substrate temperature on growth of pulsed laser deposited copper oxide thin films has been investigated by employing Nd: YAG laser (532[Formula: see text]nm, 6[Formula: see text]ns, 10[Formula: see text]Hz) irradiation at a fluence of 8.2[Formula: see text]J/cm2. XRD analysis reveals that copper oxide films deposited at room temperature are amorphous in nature, whereas films deposited at higher substrate temperatures are polycrystalline in nature. SEM and AFM analyses revealed that films deposited at substrate temperatures, ranging from room temperature to 300[Formula: see text]C are comprised of large sized clusters, islands and particulates, whereas uniform films with an appearance of granular morphology and distinct bump formation are grown at higher substrate temperatures of 400[Formula: see text]C and 500[Formula: see text]C. The optical bandgap of deposited films is evaluated by UV-VIS spectroscopy and shows a decreasing trend with increasing substrate temperature. Four point probe analysis reveals that electrical conductivity of the deposited films increases with increase in the substrate temperature, and is maximum for highest growth temperature of 500[Formula: see text]C. It is revealed that growth temperature plays a significant role for structure, texture, optical and electrical behavior of copper oxide thin films. The surface and structural properties of the deposited films are well correlated with their electrical and optical response.

Influence of Substrate Temperature on Structure and Optical Property of Cu3N Thin Films

2010 ◽  
Vol 152-153 ◽  
pp. 218-221
Author(s):  
Jian Rong Xiao ◽  
Ai Hua Jiang ◽  
Ye Guang Liang
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Optical Transmission ◽  
X Ray Diffraction ◽  
Compact Structure ◽  
Copper Nitride ◽  
X Ray ◽  
Atomic Force ◽  
Influence Of Substrate ◽  
Substrate Temperatures

Copper nitride thin films were prepared by reactive radio frequency magnetron sputtering at various substrate temperatures. The surface morphology and crystal structure of the thin films were characterized by atomic force microscope (AFM) and X-ray diffraction (XRD), respectively. The AFM images demonstrate that the films have a compact structure. The XRD test indicates that growth orientation of the thin films prefers the (111) or (100) at different substrate temperature. The optical transmission properties of the thin films were obtained by an ultraviolet visible spectrometer. The optical band gap of the thin films decreases with increasing substrate temperature.

Influence of Substrate Temperature on Tin Oxide Thin Films Deposited by Electron Beam Evaporation Technique

1992 ◽  
Vol 242 ◽  
Author(s):  
S. M. Rozati ◽  
S. Mirzapour ◽  
M. G. Takwale ◽  
B. R. Marathe ◽  
V. G. Bhide
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Electron Beam Evaporation ◽  
Electron Beam Evaporation Technique ◽  
Evaporation Technique ◽  
Influence Of Substrate ◽  
Tin Oxide Films ◽  
Deposited Films

ABSTRACTTransparent conducting tin oxide films were prepared by an electron beam evaporation technique. As-deposited films were amorphous or polycrystalline depending on the substrate temperature and the time of deposition. In order to get transparent and conducting thin films of SnO2, as-deposited films were subjected to further heat-treatment in air at 650°C for 2 hours. Physical properties of as-deposited and annealed films are discussed with reference to substrate temperature and deposition time.

Influence of Substrate Temperature on Semiconducting Properties of Thin Films

1968 ◽  
Vol 23 (3) ◽  
pp. 348-351 ◽  
Author(s):  
V. D. Deokar ◽  
A. Goswami
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Carrier Concentration ◽  
Hall Coefficient ◽  
Hall Mobility ◽  
Mean Free Path ◽  
Growth Defects ◽  
Semiconducting Properties ◽  
Influence Of Substrate ◽  
Deposited Films

The influence of the substrate temperature during deposition on various semiconducting parameters viz. Hall coefficient (RH), conductivity (σ), Hall mobility (μH), carrier concentration (n) and mean free path (ι0) of vacuum deposited films of Tl2Se and Tl2Te compounds has been studied. Increasing values of RH , σ, μH and ι0 with increasing substrate temperature are explained by a decrease of growth defects of the films with rising substrate temperature.

Fabrication of ZnS Thin Film Buffer Layer in Solar Cell by Radio Frequency Sputtering Method

2014 ◽  
Vol 894 ◽  
pp. 386-390
Author(s):  
Zue Chin Chang ◽  
Yi Chen Lin ◽  
Chih Yuan Chen ◽  
Chien Chon Chen
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Temperature ◽  
Radio Frequency ◽  
Transmission Rate ◽  
Hexagonal Wurtzite Structure ◽  
Xrd Analysis ◽  
Electrical Measurement ◽  
Radio Frequency Sputtering ◽  
Substrate Temperatures

The present study aims to investigate the influence of Coring glass substrate temperature on the topography, deposition rate, crystal structure, optical, and electrical properties of ZnS thin films produced by magnetic radio frequency sputtering method. From plain view SEM micrographs, the pebble structure has shown in all ZnS thin films deposited at various substrate temperatures. Through higher substrate temperature, smaller ZnS grains can be obtained in the present study. From XRD analysis, ZnS thin film exhibits hexagonal Wurtzite structure. When thickness of ZnS thin film arrive 300nm, optical transmission rate can be above 85% regardless of substrate temperature and gets optical energy barrier of 3.9 eV. From electrical measurement, the variation of resistivity with temperature exhibits a linear relationship for ZnS thin film.

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