GaN Layer Grown by Hydride Vapor Phase Epitaxy: Influence of the Reactor Pressure

2012 ◽  
Vol 571 ◽  
pp. 147-150
Author(s):  
Xin Jian Xie ◽  
Qiu Yan Hao ◽  
Li Min Liang ◽  
Yin Ying Li ◽  
Cai Chi Liu
Keyword(s):  
Crystal Structure ◽  
Root Mean Square ◽  
Vapor Phase ◽  
Photoluminescence Spectrum ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Mean Square ◽  
Rocking Curve ◽  
Reactor Pressure

In this paper, the influence of reactor pressure on the quality of GaN epilayer grown by Hydride vapor phase epitaxy (HVPE) is reported. A series of sample was fabricated at 0.2, 0.5, 0.7 and 1 atm. There were several samples at certain pressure in order to avoid the random affection. And the root mean square (RMS) is introduced to determine the repeatability. The rocking curve and photoluminescence spectrum are used to evaluate the quality of the grown epilayer. The reactor pressure has affection on the quality of GaN epilayer. Low reactor pressure is helpful to improving the quality of crystal structure.

The influence of reactor pressure on qualities of GaN layers grown by hydride vapor phase epitaxy

2009 ◽  
Vol 517 (6) ◽  
pp. 2088-2091 ◽  
Author(s):  
X.C. Cao ◽  
D.L. Xu ◽  
H.M. Guo ◽  
C.J. Liu ◽  
Z.J. Yin ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Reactor Pressure

Effects of the group V/III ratio and a gan inter-layer on the crystal quality of InN grown by using the hydride vapor-phase epitaxy method

2015 ◽  
Vol 66 (6) ◽  
pp. 994-1000
Author(s):  
Ju-Hyung Ha ◽  
Juan Wang ◽  
Won-Jae Lee ◽  
Young-Jun Choi ◽  
Hae-Yong Lee ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Crystal Quality ◽  
Group V

Study of the structural quality of GaN epitaxial layers obtained by hydride vapor phase epitaxy using a low-temperature buffer layer

2015 ◽  
Vol 60 (6) ◽  
pp. 889-894
Author(s):  
I. A. Belogorohov ◽  
A. A. Donskov ◽  
S. N. Knyazev ◽  
Yu. P. Kozlova ◽  
V. F. Pavlov ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Structural Quality ◽  
Epitaxial Layers

The influence of sapphire substrate orientation on crystalline quality of GaN films grown by hydride vapor phase epitaxy

2009 ◽  
Vol 404 (23-24) ◽  
pp. 4919-4921
Author(s):  
Anatolij Govorkov ◽  
Alexsandr Donskov ◽  
Lev Diakonov ◽  
Yulia Kozlova ◽  
Sergej Malahov ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Sapphire Substrate ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Crystalline Quality ◽  
Substrate Orientation

scholarly journals Growth of Freestanding Gallium Nitride (GaN) Through Polyporous Interlayer Formed Directly During Successive Hydride Vapor Phase Epitaxy (HVPE) Process

Crystals ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 141 ◽  
Author(s):  
Haixiao Hu ◽  
Baoguo Zhang ◽  
Lei Liu ◽  
Deqin Xu ◽  
Yongliang Shao ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Chemical Vapor ◽  
Growth Stress ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Organic Chemical ◽  
High Quality ◽  
Continuous Growth

The progress of nitride technology is widely limited and hindered by the lack of high-quality gallium nitride (GaN) wafers. Therefore, a large number of GaN epitaxial devices are grown on heterogeneous substrates. Although various additional treatments of substrate have been used to promote crystal quality, there is still plenty of room for its improvement, in terms of direct and continuous growth based on the hydride vapor phase epitaxy (HVPE) technique. Here, we report a three-step process that can be used to enhance the quality of GaN crystal by tuning V/III rate during successive HVPE process. In the growth, a metal-organic chemical vapor deposition (MOCVD) grown GaN on sapphire (MOCVD-GaN/Al2O3) was employed as substrate, and a high-quality GaN polyporous interlayer, with successful acquisition, without any additional substrate treatment, caused the growth stress to decrease to 0.06 GPa. Meanwhile the quality of GaN improved, and the freestanding GaN was directly obtained during the growth process.

scholarly journals In-Situ Preparation of GaN Sacrificial Layers on Sapphire Substrate in MOVPE Reactor for Self-Separation of the Overgrown GaN Crystal

Crystals ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1100
Author(s):  
Sepideh Faraji ◽  
Elke Meissner ◽  
Roland Weingärtner ◽  
Sven Besendörfer ◽  
Jochen Friedrich
Keyword(s):  
Vapor Phase ◽  
Sapphire Substrate ◽  
Vapor Phase Epitaxy ◽  
The Self ◽  
Etching Process ◽  
Hydride Vapor Phase Epitaxy ◽  
Etching Parameters ◽  
Gan Crystal

GaN layers on sapphire substrates were prepared by using metal organic vapor phase epitaxy (MOVPE) combined with an in-situ H2 etching process for the purpose of later self-separation of thick GaN crystals produced by hydride vapor phase epitaxy (HVPE) on such substrates. The etching process results in deep pits and long voids that formed on the surface and along the lower interface between GaN and sapphire, respectively. The pits, which were investigated by SEM analysis, can be modified in their aspect ratio and density by controlling the etching parameters. Using a proper set of in-situ etching parameters, a seed layer with internal voids can be prepared, which is suitable for HVPE overgrowth and the self-separation process. The quality of the in-situ-etched seed GaN layer and overgrown GaN crystal were characterized by X-ray diffraction (XRD) and defect selective etching (DSE). With the aid of atomic force microscopy (AFM) in tapping mode, the interface morphology of the separated GaN crystal was analyzed. The crystal quality of the separated HVPE-GaN crystal is comparable to the crystal grown on untreated GaN MOVPE-seed, which did not separate from the sapphire substrate. The introduced technique to promote the crystal separation during the HVPE process has no obvious drawback on the quality of the grown GaN crystals. Using this technique, the self-separation occurs more gently due to a weakened interface between GaN/sapphire. The conventional separation from an untreated seed by pure thermomechanical action results in higher mechanical forces on the crystal and consequently much higher risk of crystal breakage.

Effects of the V/III ratio on the quality of aluminum nitride grown on (0001) sapphire by high temperature hydride vapor phase epitaxy

2013 ◽  
Vol 10 (3) ◽  
pp. 362-365 ◽  
Author(s):  
N. Coudurier ◽  
R. Boichot ◽  
V. Fellmann ◽  
A. Claudel ◽  
E. Blanquet ◽  
...  
Keyword(s):  
High Temperature ◽  
Aluminum Nitride ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

scholarly journals Полуполярные GaN-слои на наноструктурированной Si(100)-подложке

2018 ◽  
Vol 44 (12) ◽  
pp. 45
Author(s):  
В.Н. Бессолов ◽  
Е.В. Коненкова ◽  
Т.А. Орлова ◽  
С.Н. Родин ◽  
М.П. Щеглов ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
New Method ◽  
Rocking Curve ◽  
X Ray ◽  
Polar Direction ◽  
Semipolar Gan

AbstractWe propose a new method for growing semipolar GaN films on a Si(100) substrate with an array of sub-100-nm-sized V-grooves formed on the surface. It is shown that, using such a nanostructured substrate for metalorganic hydride vapor-phase epitaxy, it is possible to obtain GaN (101̅1̇) epilayers deviating by an angle of about 62° from the polar direction and having an X-ray rocking curve with a minimum FWHM value of ω_θ ~ 60 arcmin.

Sign in / Sign up

Export Citation Format

Share Document