Surface Morphology of Films Grown by Size-Selected Ta Nanoparticles

2013 ◽  
Vol 647 ◽  
pp. 732-737 ◽  
Author(s):  
Vidyadhar Singh ◽  
Cathal Cassidy ◽  
Murtaza Bohra ◽  
Antony Galea ◽  
Zafer Hawash ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
High Resolution ◽  
Sputter Deposition ◽  
Silicon Substrates ◽  
Contact Mode ◽  
X Ray ◽  
Force Microscopy ◽  
Spherical Structure ◽  
Atomic Force ◽  
Morphology Of Films

Tantalum nanoparticle (NP) films have been deposited on silicon substrates, using sputter deposition with gas aggregation. The resultant NP films have been characterized using high resolution atomic force microscopy and X-ray fluorescence spectroscopy. The films remain stable and the NPs maintain a spherical structure on annealing up to 600 °C. In addition to characterization, these NP films have been locally patterned by atomic force microscope scanning of the surface in contact mode.

scholarly journals Contact-Mode High-Resolution High-Speed Atomic Force Microscopy Movies of the Purple Membrane

2009 ◽  
Vol 97 (5) ◽  
pp. 1354-1361 ◽  
Author(s):  
Ignacio Casuso ◽  
Noriyuki Kodera ◽  
Christian Le Grimellec ◽  
Toshio Ando ◽  
Simon Scheuring
Keyword(s):  
Atomic Force Microscopy ◽  
High Resolution ◽  
High Speed ◽  
Purple Membrane ◽  
Contact Mode ◽  
Force Microscopy ◽  
Atomic Force

scholarly journals A Non-Destructive, Tuneable Method to Isolate Live Cells for High-Speed AFM Analysis

2021 ◽  
Vol 9 (4) ◽  
pp. 680
Author(s):  
Christopher T. Evans ◽  
Sara J. Baldock ◽  
John G. Hardy ◽  
Oliver Payton ◽  
Loren Picco ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
High Resolution ◽  
High Speed ◽  
Single Cells ◽  
Sample Surface ◽  
Live Cells ◽  
Contact Mode ◽  
Force Microscopy ◽  
Atomic Force ◽  
Afm Analysis

Suitable immobilisation of microorganisms and single cells is key for high-resolution topographical imaging and study of mechanical properties with atomic force microscopy (AFM) under physiologically relevant conditions. Sample preparation techniques must be able to withstand the forces exerted by the Z range-limited cantilever tip, and not negatively affect the sample surface for data acquisition. Here, we describe an inherently flexible methodology, utilising the high-resolution three-dimensional based printing technique of multiphoton polymerisation to rapidly generate bespoke arrays for cellular AFM analysis. As an example, we present data collected from live Emiliania huxleyi cells, unicellular microalgae, imaged by contact mode High-Speed Atomic Force Microscopy (HS-AFM), including one cell that was imaged continuously for over 90 min.

High-Resolution Nanophotolithography in Atomic Force Microscopy Contact Mode

2004 ◽  
Vol 37 (10) ◽  
pp. 3780-3791 ◽  
Author(s):  
Yann Gilbert ◽  
Radouane Fikri ◽  
Anna Ruymantseva ◽  
Gilles Lerondel ◽  
Renaud Bachelot ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
High Resolution ◽  
Contact Mode ◽  
Force Microscopy ◽  
Atomic Force

scholarly journals Calibration of high-resolution X-ray tomography with atomic force microscopy

2000 ◽  
Vol 105 (6) ◽  
pp. 867 ◽  
Author(s):  
A.R. Kalukin ◽  
B. Winn ◽  
Y.X. Wang ◽  
C. Jacobsen ◽  
Z.H. Levine ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
High Resolution ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

A Study of Dark Currents on Various Modified Surfaces of Mercuric Iodide Single Crystals

1993 ◽  
Vol 302 ◽  
Author(s):  
H. N. Jayatirtha ◽  
M. Azoulay ◽  
M.A. George ◽  
A. Burger
Keyword(s):  
Atomic Force Microscopy ◽  
High Resolution ◽  
Surface Modifications ◽  
Low Noise ◽  
Mercuric Iodide ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Modified Surfaces ◽  
Dark Currents

ABSTRACTThe surface modifications that occur on °-mercuric iodide surfaces during the fabrication process are crucial for the development of a low noise, high resolution X-ray spectrometer. In this study, we discuss the effects of surface treatments on the dark currents and the results are correlated with surface morphology studies that were carried out by the atomic force microscopy (AFM) technique.

scholarly journals Рост твердых растворов InAs-=SUB=-x-=/SUB=-Sb-=SUB=-1-x-=/SUB=- на отклоненных подложках GaAs(001) методом молекулярно-лучевой эпитаксии

2019 ◽  
Vol 53 (4) ◽  
pp. 512
Author(s):  
Е.А. Емельянов ◽  
А.В. Васев ◽  
Б.Р. Семягин ◽  
М.Ю. Есин ◽  
И.Д. Лошкарев ◽  
...  
Keyword(s):  
Solid Solution ◽  
Atomic Force Microscopy ◽  
High Resolution ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Molecular Form ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Influence Of Substrate

The influence of substrate misorientation degree on the composition and morphology of layers during molecular-beam epitaxy of InAsxSb1−x solid solutions on the GaAs surface was studied. The GaAs wafers with orientation (001), which were miscuted in the [110] direction by 0, 1, 2 and 5◦, were used as substrates. The growth of heterostructures was performed for temperatures of 310◦C and 380◦C (lower and upper boundaries for the temperature range of structurally perfect InAsx Sb1−x films formation, respectively). The influence of the arsenic molecular form (As2 or As4) on the composition of layers was studied. Studies of composition and structural properties were carried out using high-resolution X-ray diffractometry (HRXRD) and atomic force microscopy (AFM). It was established that in the series of misorientation from 0 to 5◦ the arsenic fraction x increases consecutively with the use of both flux of As2 and flux of As4 molecules. When the flux of As2 molecules is used, the fraction x increases insignificantly (in 1.05 times) with a rise of misorientation degree, but when using As4 molecules, x increases in 1.75 times. The increase of the growth temperature leads to the rise of the arsenic fraction in the solid solution. The morphology of the surface improves during increasing of misorientation degree at a low growth temperature and degrades at high temperatures.

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