Microstructure of Electromagnetically Levitated Si Droplets Solidified on Copper Plate

2013 ◽  
Vol 710 ◽  
pp. 3-7
Author(s):  
Li Xin Li ◽  
Jun Liang Zhao ◽  
Hong Xin Cai
Keyword(s):  
Direct Evidence ◽  
Electromagnetic Levitation ◽  
Copper Plate ◽  
Dendritic Morphology ◽  
Single Sample ◽  
Growth Mode ◽  
Mode Transition ◽  
Continuous Form ◽  
Equilibrium Solidification ◽  
Electromagnetically Levitated

By combination of electromagnetic levitation and copper-plate quenching, deep undercooling and non-equilibrium solidification of Si melts were realized. Several different morphologies of Si solidified at different undercoolings were found on the quenched surfaces, including spherical non-faceted morphology, faceted dendritic morphology, octahedral morphology and other polyhedral morphology. The mixed microstructures consisting of non-faceted and faceted morphologies in one single sample provide direct evidence for the growth mode transition from a continuous form to a lateral form.

Growth mode transition of InGaAs in OMVPE growth on GaP (001)

2000 ◽  
Vol 51-52 ◽  
pp. 35-42 ◽  
Author(s):  
H Moriya ◽  
Y Nonogaki ◽  
S Fuchi ◽  
A Koizumi ◽  
Y Fujiwara ◽  
...  
Keyword(s):  
Growth Mode ◽  
Mode Transition

Growth Evolution of (Zn,Cd)Se Quantum Dots Deduced from Spatially Resolved Structural and Optical Characterization

1999 ◽  
Vol 571 ◽  
Author(s):  
K. Leonard ◽  
D. Hommel ◽  
A. Stockmann ◽  
H. Selke ◽  
J. Seufert ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Three Dimensional ◽  
High Energy ◽  
Growth Direction ◽  
Growth Mode ◽  
Gradual Transition ◽  
Mode Transition ◽  
Spatially Resolved ◽  
Composition Fluctuations

ABSTRACTThe growth mode of CdSe layers grown by migration enhanced epitaxy between ZnSe barriers has been investigated. In situ reflection high-energy electron diffraction shows a gradual transition to a three-dimensional growth mode which, however, is not accompanied by a change of the surface lattice constant. High-resolution transmission electron micrographs reveal a strong Cd diffusion, leading to ternary ZnCdSe quantum wells. Furthermore. composition fluctuations perpendicular to the growth direction on a nanometer scale are found already prior to the beginning of the growth mode transition. In the case of heterostructures containing a CdSe layer that has undergone the growth mode transition, micrographs show Cd-rich quantum dots with diameters of around 8 nm and heights of around 1.5 nm within a ternary quantum well. By spatially resolved photoluminescence the emission from single quantum dots could be observed. The polarization dependence of the emission from single dots indicates an asymmetric shape of the dots with certain preferential orientations along the [110] and [110] directions.

scholarly journals Growth mode transition from layer by layer to step flow during the growth of heteroepitaxial SrRuO3 on (001) SrTiO3

2001 ◽  
Vol 79 (10) ◽  
pp. 1447-1449 ◽  
Author(s):  
J. Choi ◽  
C. B. Eom ◽  
G. Rijnders ◽  
H. Rogalla ◽  
D. H. A. Blank
Keyword(s):  
Growth Mode ◽  
Layer By Layer ◽  
Mode Transition ◽  
Step Flow

scholarly journals Growth mode transition of atomic layer deposited Al2O3 on porous TiO2 electrodes of dye-sensitized solar cells

2012 ◽  
Vol 520 (6) ◽  
pp. 1745-1750 ◽  
Author(s):  
Ta-Chang Tien ◽  
Fu-Ming Pan ◽  
Lih-Ping Wang ◽  
Feng-Yu Tsai ◽  
Ching Lin
Keyword(s):  
Solar Cells ◽  
Dye Sensitized Solar Cells ◽  
Atomic Layer ◽  
Growth Mode ◽  
Mode Transition ◽  
Porous Tio2 ◽  
Dye Sensitized ◽  
Sensitized Solar Cells
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