Effects of Progressive SiNx Films on the Performance of Polycrystalline Silicon Solar Cells

2013 ◽  
Vol 724-725 ◽  
pp. 151-155
Author(s):  
Peng Wang ◽  
Xian Fang Gou ◽  
Wei Tao Fan ◽  
Chen Cai Sun

In order to improving the conversion efficiency of polycrystalline silicon solar cells, progressive SiNx thin films were deposited on the surface via Roth&Rau plasma-enhanced chemical vapor deposition method. The effects of progressive SiNx thin films, such as surface passivation, anti-reflection, and electrical performance were systematically investigated. Compared with monolayer films, progressive SiNx thin films have better anti-reflective properties in the wavelength range of 300-500 nm, resulting in improvement of the short wavelength absorption of the crystalline silicon solar cells. Moreover, the bottom of progressive SiNx thin films with high refractive index enhances the surface passivation. Thus, higher open-circuit voltage and fill factor could be obtained by this technique.

2014 ◽  
Vol 7 (2) ◽  
pp. 021303 ◽  
Author(s):  
Takayuki Uchida ◽  
Toshiyuki Kawaharamura ◽  
Kenji Shibayama ◽  
Takahiro Hiramatsu ◽  
Hiroyuki Orita ◽  
...  

2011 ◽  
Vol 1288 ◽  
Author(s):  
Yasuko Hirayama ◽  
Hirotada Inoue ◽  
Kenta Matsuyama ◽  
Yasu umi Tsunomura ◽  
Daisuke Fujishima ◽  
...  

ABSTRACTIn order to reduce the power-generating cost of silicon solar cells, it is necessary to achieve a high conversion efficiency using a thinner crystalline silicon (c-Si) substrate. The HIT solar cell is an amorphous silicon (a-Si) /crystalline silicon (c-Si) heterojunction solar cell that makes it possible to realize excellent surface passivation and hence high open circuit voltage (Voc). In addition, its symmetrical structure and a low-temperature fabrication process that is under 200°C provide advantages in reducing thermal and mechanical stresses within the device so that it can easily be applied to thinner solar cells. We fabricated HIT solar cells using thin wafers from 58-98 μm, and achieved a 22.8% conversion efficiency with a HIT solar cell using a 98-μm-thick wafer, and an excellent Voc value of 0.747 V with a HIT solar cell using a 58-μm-thick wafer.


1994 ◽  
Vol 64 (2) ◽  
pp. 199-201 ◽  
Author(s):  
J. Zhao ◽  
A. Wang ◽  
A. Aberle ◽  
S. R. Wenham ◽  
M. A. Green

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