Influence of Substrate on Soft Magnetic Properties of Fe-Co-Si/Native Oxide Multilayer Films

2013 ◽  
Vol 750-752 ◽  
pp. 965-969
Author(s):  
Hua Ping Zuo ◽  
Shi Hui Ge ◽  
Feng Zhang ◽  
Guo Wei Wang ◽  
Min Xu ◽  
...  

The [Fe-Co-Si (d)/native oxid50multilayer films were deposited on Kapton substrate and glass substrate by DC magnetron sputtering. The effect of substrate on magnetic and electric properties of the multilayer films was investigated. Compared to the films on glass substrates, higher coercivity, larger uniaxial-anisotropy field were achieved for the flexible films. The values of the resistivities for the flexible films are of the order of 10 mΩcm, which is two orders higher than the value of 0.1 mΩcm for the multilayer films on glass substrates. Furthermore, higher frwas found in the flexible films. It is believed that the [Fe-Co-Si (d)/native oxide]50multilayer films on flexible substrates can find its wide applications at high frequency for various purposes.

2010 ◽  
Vol 62 (10) ◽  
pp. 766-769 ◽  
Author(s):  
Huaping Zuo ◽  
Shihui Ge ◽  
Zhenkun Wang ◽  
Yuhua Xiao ◽  
Dongsheng Yao

2015 ◽  
Vol 727-728 ◽  
pp. 130-133
Author(s):  
Hua Ping Zuo ◽  
Shi Hui Ge ◽  
Min Xu ◽  
Chun Hua Wu

The [Fe-Co-Si (2 nm)/native oxide]N multilayer films weredeposited on glass substrate by DC magnetron sputtering. The effect of repetitionnumber N on static and dynamicmagnetic properties of the multilayer films was investigated. Good soft magnetic properties have been obtained inthe multilayer films with repetition number more than 30. Relatively highvalues of the complex permeability and ferromagnetic resonance frequency wereobtained and they can be adjusted by changing the repetition number of themultilayer films.


Materials ◽  
2019 ◽  
Vol 12 (14) ◽  
pp. 2328
Author(s):  
Luran Zhang ◽  
Dandan Gao ◽  
Huan Liu ◽  
Jiyang Xie ◽  
Wanbiao Hu

A series of FeCoN films were successfully deposited on glass substrates in a magnetron sputtering system. Using oblique incidence method and FeCoN/Ru/FeCoN synthetic antiferromagnetic (SAF) structure, two additional anisotropies energy were introduced: oblique incidence anisotropy and exchange anisotropy energy, which marked enhancement of the effective magnetic anisotropy (Hk). The increment of Hk results in a significant improvement in the roll-off frequency of these films. The roll-off frequency of FeCoN/Ru/FeCoN films with SAF structure can reach up to 8.6 GHz. A feasible approach to conveniently controlling Hk of soft magnetic thin films by using oblique deposition and SAF structure can further improve their properties for the potential applications in the high frequency region.


2014 ◽  
Vol 488-489 ◽  
pp. 174-177
Author(s):  
Rui Xu ◽  
Lai Sen Wang ◽  
Xiao Long Liu ◽  
Meng Lei ◽  
Qing Luo ◽  
...  

In this research, a series of [Fe80Ni20-O/NiZn-ferritn multilayer thin films with different insulation layer thickness were prepared by magnetron sputtering at room temperature. The high frequency soft magnetic properties of [Fe80Ni20-O/NiZn-ferritn multilayer thin films were investigated. It was found that the in-plane magnetic anisotropy field (Hk) and saturation magnetizations (4πMs) can be adjusted by changing the insulation layer thickness, and the optimal Hk and 4πMs can be obtained as the insulation layer thickness of 2.5 nm. The adjustment of insulation layer thickness is essential to obtain low coercivity (Hc) and high permeability (μ) of the multilayer thin films. The measured resistivity (ρ) of [Fe80Ni20-O/NiZn-ferritn multilayer thin films was increased from 211 to 448 μΩcm with increasing the insulation layer thickness.


1993 ◽  
Vol 313 ◽  
Author(s):  
G. Qiu ◽  
E. Haftek ◽  
J. C. Cates ◽  
C. Alexander ◽  
J. A. Barnard

ABSTRACTHigh Moment single layer FeTaN films with excellent soft magnetic properties have been grown by high rate reactive dc magnetron sputtering. The best combination of properties (easy and hard axis coercivities < 1 Oe, saturation Magnetization > 1650 emu/cc, anisotropy field of 5 Oe, and initial permeability of 4800) are found in films containing ∼3.2 a/O Ta and ∼7.5 a/o N after 400°C annealing in a 200 Oe dc field for two hours. These properties are associated with a single phase, random, nanocrystalline structure consisting of a-Fe crystallites (grain size of ∼ 100Å) whose lattice is expanded by both Ta and N.


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