Magnetic Properties and Crystal Structure of High Moment FeTaN Thin Films

1993 ◽  
Vol 313 ◽  
Author(s):  
G. Qiu ◽  
E. Haftek ◽  
J. C. Cates ◽  
C. Alexander ◽  
J. A. Barnard
Keyword(s):  
Magnetic Properties ◽  
Single Phase ◽  
Single Layer ◽  
Nanocrystalline Structure ◽  
Anisotropy Field ◽  
Initial Permeability ◽  
High Moment ◽  
High Rate ◽  
Dc Magnetron Sputtering ◽  
Soft Magnetic

ABSTRACTHigh Moment single layer FeTaN films with excellent soft magnetic properties have been grown by high rate reactive dc magnetron sputtering. The best combination of properties (easy and hard axis coercivities < 1 Oe, saturation Magnetization > 1650 emu/cc, anisotropy field of 5 Oe, and initial permeability of 4800) are found in films containing ∼3.2 a/O Ta and ∼7.5 a/o N after 400°C annealing in a 200 Oe dc field for two hours. These properties are associated with a single phase, random, nanocrystalline structure consisting of a-Fe crystallites (grain size of ∼ 100Å) whose lattice is expanded by both Ta and N.

Microstructure and Magnetic Properties of the CoPtRu-SiO2 Single and CoPtRu-SiO2/Co72Pt28-SiO2 Double Layer Nanocomposite Films

2011 ◽  
Vol 688 ◽  
pp. 358-363
Author(s):  
Ru Jun Tang ◽  
Wan Li Zhang ◽  
Yan Rong Li
Keyword(s):  
Magnetic Properties ◽  
Double Layer ◽  
Single Layer ◽  
Anisotropy Field ◽  
Anisotropy Constant ◽  
Nanocomposite Films ◽  
Soft Magnetic ◽  
Layer Film ◽  
Single Layer Film ◽  
Microstructure And Magnetic Properties

In this work, the CoPtRu nanocomposite films with were fabricated on the Ru seed layer. The effects of Ru content on the microstructure and magnetic properties of the CoPtRu-SiO2single layer nanocomposite films, and magnetic properties of the CoPtRu-SiO2/Co72Pt28-SiO2double layer nanocomposite films were studied. Results showed that with an increase of Ru content in the CoPtRu film, the ordering degree ofhcp-CoPtRu decreased, the volume of soft magneticfccphase increased, both the anisotropy constant and the saturation magnetization of the CoPtRu film decreased greatly. As a result, the anisotropy field of the film did not decrease notably. Therefore, the coercivity of the CoPtRu-SiO2/Co72Pt28-SiO2double layer film was very close to that of Co72Pt28-SiO2single layer film at both room temperature and low temperature.

scholarly journals Влияние напряжения смещения и скорости осаждения на структуру и коэрцитивность пленок NiFe

2020 ◽  
Vol 62 (12) ◽  
pp. 2174
Author(s):  
А.С. Джумалиев ◽  
C.Л. Высоцкий ◽  
В.К. Сахаров
Keyword(s):  
Grain Size ◽  
Magnetic Properties ◽  
Film Thickness ◽  
Deposition Rate ◽  
Entire Range ◽  
Soft Magnetic Properties ◽  
Supercritical State ◽  
Dc Magnetron Sputtering ◽  
Soft Magnetic ◽  
Critical Film Thickness

Influence of the bias voltage Ub and the deposition rate  on the structure, grain size D, and coercivity Hc of NiFe films with the thickness d from 30 to 980 nm, grown onto Si / SiO2 substrates by DC magnetron sputtering, was studied. In the case Ub = 0, the decrease of  from ≈ nm/min to ≈ 7 nm/min is accompanied by the increase of the critical film thickness dcr from dcr ≈ 220 nm to dcr ≈ 270 nm. In this case, Hc in the films with d < dcr is characterized by the dependence Hc ~ D6 and varies from ~ 1 to ~ 20 Oe. In the case of Ub = -100 V, the effect of the deposition rate on the coercivity is much more noticeable. At ν = 7 and 14 nm / min, the films demonstrate soft magnetic properties (Нс ≈ 0.15 - 1.4 Oe) and the absence of dcr for the entire range of studied thicknesses. The films obtained at ν = 21 and 27 nm / min turn into the “supercritical” state at d ≥ dcr ≈ 520 nm, and, in the region d < dcr, they are characterized by the dependence Hc ~ D3 and by the increase of coercivity from ~ 0.35 to ~ 10 Oe.

Soft magnetic properties and microstructure of high moment Fe-N-Al-O films for recording heads

2000 ◽  
Vol 36 (5) ◽  
pp. 3470-3472 ◽  
Author(s):  
S. Ikeda ◽  
Y. Uehara ◽  
I. Tagawa ◽  
N. Takeguchi ◽  
M. Kakehi
Keyword(s):  
Magnetic Properties ◽  
High Moment ◽  
Soft Magnetic Properties ◽  
Soft Magnetic ◽  
Recording Heads

EVOLUTION OF NANOGRAINS AND SOFT MAGNETIC PROPERTIES OF Fe74Cu0.8Nb2.7Si15.5B7 BY ISOTHERMAL ANNEALING

2011 ◽  
Vol 25 (14) ◽  
pp. 1241-1251 ◽  
Author(s):  
SHEIKH MANJURA HOQUE ◽  
UMASREE DHAR ◽  
M. A. HAKIM ◽  
D. K. SAHA ◽  
HARI NARAYAN DAS
Keyword(s):  
Magnetic Properties ◽  
Melt Spinning ◽  
Isothermal Annealing ◽  
Amorphous State ◽  
Initial Permeability ◽  
Soft Magnetic Properties ◽  
Soft Magnetic ◽  
Type Composition ◽  
Long Time ◽  
Short Time

Fe -based alloy of the composition, Fe 74 Cu 0.8 Nb 2.7 Si 15.5 B 7 has been studied thoroughly in order to research the evolution of nanograins and soft magnetic properties. The composition has been significantly deviated from FINEMET type composition given by Fe 73.5 Cu 1 Nb 3 Si 13.5 B 9. It is hard to optimize composition to obtain equally good soft magnetic properties as FINEMET significantly deviating from conventional type alloy. Fe -based alloy of the composition, Fe 74 Cu 0.8 Nb 2.7 Si 15.5 B 7 has been prepared by single roller melt spinning machine. X-ray diffraction studies confirmed that the ribbon is in the amorphous state. Evolution of α- Fe ( Si ) nanograins from amorphous matrix were carried out by isothermal annealing in the temperature range from 550°C to 650°C for 1, 3, 5, 10, 20, 30, 40, 50 and 60 minutes. Frequency spectrum of real and imaginary part of complex initial permeability has been measured for the samples at different annealing conditions. Short time annealing has been proved to be more efficient than long time annealing for the samples of this composition for most of the annealing temperatures.

Influence of The Alloy Composition on The Magnetic Properties of Nanocrystalline Fe80M7B12Cu1 (M: Ti, Ta, Nb, Mo)

1999 ◽  
Vol 577 ◽  
Author(s):  
M. Kopcewicz ◽  
A. Grabias ◽  
B. Idzikowski
Keyword(s):  
Magnetic Properties ◽  
Annealing Temperature ◽  
Alloy Composition ◽  
Anisotropy Field ◽  
Nanocrystalline Phase ◽  
Soft Magnetic Properties ◽  
Soft Magnetic ◽  
Scanning Calorimetry ◽  
Rf Magnetic Field ◽  
Collapse Effect

ABSTRACTFormation of the nanocrystalline bcc Fe phase due to thermal treatment of the amorphous Fe80M7B12Cu1 (M: Ti, Ta, Nb, Mo) precursors is studied by the Mössbauer and differential scanning calorimetry techniques. The dependence of the formation of the bcc Fe phase on the alloy composition is discussed. In order to determine the optimal soft magnetic properties of these nanocrystalline alloys the rf-Mössbauer technique is used in which rf collapse effect induced by a radio-frequency (rf) magnetic field is employed. It was found that anisotropy fields in the nanocrystalline phase were smaller in Nb- and Mo-containing alloys as compared to the alloys which contain Ti or Ta. Variations of the anisotropy field vs. alloy composition and annealing temperature are discussed in detail.

Soft Magnetic Properties of [Fe80Ni20-O/NiZn-Ferrite]n Multilayer Thin Films for High Frequency Application

2014 ◽  
Vol 488-489 ◽  
pp. 174-177
Author(s):  
Rui Xu ◽  
Lai Sen Wang ◽  
Xiao Long Liu ◽  
Meng Lei ◽  
Qing Luo ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Layer Thickness ◽  
High Frequency ◽  
Anisotropy Field ◽  
Soft Magnetic Properties ◽  
Multilayer Thin Films ◽  
Insulation Layer ◽  
Soft Magnetic ◽  
Measured Resistivity

In this research, a series of [Fe80Ni20-O/NiZn-ferritn multilayer thin films with different insulation layer thickness were prepared by magnetron sputtering at room temperature. The high frequency soft magnetic properties of [Fe80Ni20-O/NiZn-ferritn multilayer thin films were investigated. It was found that the in-plane magnetic anisotropy field (Hk) and saturation magnetizations (4πMs) can be adjusted by changing the insulation layer thickness, and the optimal Hk and 4πMs can be obtained as the insulation layer thickness of 2.5 nm. The adjustment of insulation layer thickness is essential to obtain low coercivity (Hc) and high permeability (μ) of the multilayer thin films. The measured resistivity (ρ) of [Fe80Ni20-O/NiZn-ferritn multilayer thin films was increased from 211 to 448 μΩcm with increasing the insulation layer thickness.

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