A Novel Wideband Transition between Waveguide and SIW

2013 ◽  
Vol 760-762 ◽  
pp. 174-177
Author(s):  
Yi Hong Zhou ◽  
Hai Yang Wang ◽  
Jia Yin Li
Keyword(s):  
Insertion Loss ◽  
Return Loss ◽  
Substrate Integrated Waveguide ◽  
Transition Structure ◽  
Low Loss ◽  
Ka Band ◽  
Low Insertion Loss ◽  
Better Than ◽  
Wideband Transition

Based on a linearly tapered antipodal finline, a novel low-loss wideband transition between waveguide and substrate integrated waveguide (SIW) is discussed. Results show that a low insertion loss (1.2-2.1dB) and a return loss better than 15dB across the entire Ka-band are obtained for a back-to-back transition structure.

Broadband Transition between Rectangular Waveguide and Substrate Integrated Waveguide Based on Double Rhombus Antenna Probe

2014 ◽  
Vol 668-669 ◽  
pp. 799-802
Author(s):  
Hai Yan Jin ◽  
Teng Yue
Keyword(s):  
Insertion Loss ◽  
Rectangular Waveguide ◽  
Return Loss ◽  
Substrate Integrated Waveguide ◽  
Metal Waveguide ◽  
Low Insertion Loss ◽  
Better Than ◽  
Good Agreement

The paper presents a design of rectangular waveguide-SIW transition, which provides a broadband and low insertion loss performance. The broadband transition is realized by using double-rhombus antenna probe inserted into rectangular metal waveguide. The transition is simulated and measured at 9-20GHz. The measured results show that a good agreement with simulation and an insertion loss less than 2.8 dB and a return loss better than 10 dB are obtained at 10–18.5 GHz for a back-to-back structure.

A Novel Wideband transition from Substrate Integrated Waveguide to Rectangular Waveguide

2020 ◽  
Vol 10 ◽  
Author(s):  
Keyur Mahant ◽  
Hiren Mewada ◽  
Amit Patel ◽  
Alpesh Vala ◽  
Jitendra Chaudhari
Keyword(s):  
Rectangular Waveguide ◽  
Printed Circuit Board ◽  
Low Cost ◽  
Single Layer ◽  
Circuit Board ◽  
Substrate Integrated Waveguide ◽  
Ka Band ◽  
Better Than ◽  
Millimeter Wave Circuits ◽  
Wideband Transition

Aim: In this article, wideband substrate integrated waveguide (SIW) and rectangular waveguide (RWG) transition operating in Ka-band is proposed Objective: In this article, wideband substrate integrated waveguide (SIW) and rectangular waveguide (RWG) transition operating in Ka-band is proposed. Method: Coupling patch etched on the SIW cavity to couple the electromagnetic energy from SIW to RWG. Moreover, metasurface is introduced into the radiating patch to enhance bandwidth. To verify the functionality of the proposed structure back to back transition is designed and fabricated on a single layer substrate using standard printed circuit board (PCB) fabrication technology. Results: Measured results matches with the simulation results, measured insertion loss is less than 1.2 dB and return loss is better than 3 dB for the frequency range of 28.8 to 36.3 GHz. By fabricating transition with 35 SRRs bandwidth of the proposed transition can be improved. Conclusion: The proposed transition has advantages like compact in size, easy to fabricate, low cost and wide bandwidth. Proposed structure is a good candidate for millimeter wave circuits and systems.

A wideband right-angle transition between thin substrate integrated waveguide and rectangular waveguide based on multi-section structure

2015 ◽  
Vol 8 (2) ◽  
pp. 185-191 ◽  
Author(s):  
Teng Li ◽  
Wenbin Dou
Keyword(s):  
Insertion Loss ◽  
Rectangular Waveguide ◽  
Return Loss ◽  
Impedance Matching ◽  
Experimental Results ◽  
Center Frequency ◽  
Substrate Integrated Waveguide ◽  
Rectangular Aperture ◽  
Section Structure ◽  
Better Than

In this paper, a novel wideband right-angle transition between thin substrate integrated waveguide (SIW) and rectangular waveguide (RWG) based on multi-section structure operating at center frequency 31.5 GHz is presented. A multi-section SIW with a rectangular aperture etched on the broad wall and two stepped ridges embedded in the RWG flange are introduced to obtain a wide impedance matching. The simulations show that the bandwidth with return loss better than 20 dB is about 17 GHz. In order to verify our designs, two back-to-back transitions with different lengths are fabricated and measured. The experimental results agree well with simulations. The proposed component shows an insertion loss less than 0.44 dB and a return loss better than 14.5 dB over 12.15 GH, which corresponds to 38.57% bandwidth.

Investigation of Ultralow Loss Interconnection Technique for LTCC based System-in-Package(SIP) Technology at 60GHz

2006 ◽  
Vol 969 ◽  
Author(s):  
Dong-Young Kim ◽  
Jae Kyoung Mun ◽  
Dong-Suk Jun ◽  
Haechoen Kim
Keyword(s):  
Transmission Lines ◽  
Insertion Loss ◽  
Return Loss ◽  
Frequency Range ◽  
Transmission Characteristics ◽  
Transition Structure ◽  
Low Loss ◽  
Signal Line ◽  
The Difference ◽  
Packaging Module

AbstractThe effects of wire and ribbon bond interconnection on the transmission characteristics at millimeter wave frequency range was presented. The insertion loss and return loss was closely related with the ratio of the signal line width to that of bonded wire or ribbon. The most promise condition for low loss interconnection was that the width of bonded wire or ribbon should be compatible to the width of signal lines. In the actual fabrication of LTCC amp module, the insertion loss of packaging is very small which means that the loss due to bonding is nearly negligible. However, the S11 and S22 degraded severely due to the difference of the types of transmission lines between chip and packaging module. A new transition structure was introduced in order to compensate this difference of transmission lines.

Ka Band Transition between Rectangular Waveguide and Substrate Integrated Waveguide

2012 ◽  
Vol 443-444 ◽  
pp. 362-365 ◽  
Author(s):  
Ya Zhou Dong ◽  
Shi Wei Dong ◽  
Zhong Bo Zhu ◽  
Ying Wang
Keyword(s):  
Rectangular Waveguide ◽  
Impedance Matching ◽  
Ultra Wideband ◽  
Substrate Integrated Waveguide ◽  
Low Loss ◽  
Ka Band ◽  
Ansoft Hfss ◽  
Tapered Waveguide ◽  
Band Transition ◽  
Better Than

This paper presents novel designs of Ka band transitions between standard rectangular waveguide and substrate integrated waveguide (SIW). The proposed transitions can provide simultaneous field and impedance matching. The transition with a height-tapered waveguide exhibits outstanding low-loss performance over an ultra-wideband range (entire Ka-band). And the other one with Chebyshev transformers has a compact profile and low loss better than 2dB in a bandwidth of 11GHz at Ka band. The simulation and analysis of the transitions are carried out with Ansoft HFSS.

scholarly journals A Ku-Band Low-Loss Traveling-Wave Power Divider using a Hollow Substrate Integrated Waveguide and Its Microstrip Transition

2020 ◽  
Vol 20 (2) ◽  
pp. 131-138
Author(s):  
Sung-June Hong ◽  
Min-Pyo Lee ◽  
Seil Kim ◽  
Jun-Su Lim ◽  
Dong-Wook Kim
Keyword(s):  
Insertion Loss ◽  
Traveling Wave ◽  
Return Loss ◽  
Power Divider ◽  
Wave Power ◽  
Substrate Integrated Waveguide ◽  
Low Loss ◽  
Power Combining ◽  
Via Holes ◽  
Ku Band

In this paper, we present a Ku-band low-loss traveling-wave power divider that uses a hollow substrate integrated waveguide (HSIW). For easy connection with microstrip-based devices and circuits, a low-loss transition between the microstrip line and the HSIW structure was implemented using C-cut via holes at the discontinuity interface, which reduces radiation and leakage effects and improves mismatch performance. To validate the performance of the transition, a back-to-back microstrip-to-HSIW transition was designed, fabricated, and measured from 12.5 GHz to 15.5 GHz. The measured results showed a return loss of 18 dB or more and an insertion loss of 0.5 ± 0.07 dB. An HSIW-based, low-loss 1:3 traveling-wave power divider was fabricated and measured from 13.5 GHz to 14.5 GHz. The power divider showed a return loss of at least 21 dB, an insertion loss of 0.57 ± 0.03 dB, and a power combining efficiency of 87.1%–88.3%.

Optimization of Scattering Parameters through Numerical Investigation of One-bit RF MEMS Switch over Ku, K and Ka Band

2020 ◽  
Vol 12 ◽  
Author(s):  
Pampa Debnath ◽  
Ujjwal Mondal ◽  
Arpan Deyasi
Keyword(s):  
Transmission Line ◽  
Numerical Investigation ◽  
Line Width ◽  
Insertion Loss ◽  
Return Loss ◽  
Rf Mems ◽  
Rf Mems Switch ◽  
Ka Band ◽  
Mems Switch ◽  
Overlap Area

Aim:: Computation of loss factors for one-bit RF MEMS switch over Ku, K and Ka-band for two different insulating substrates. Objective:: Numerical investigation of return loss, insertion loss, isolation loss are computed under both actuated and unactuated states for two different insulating substrates of the 1-bit RF MEMS switch, and corresponding up and down-capacitances are obtained. Methods:: The unique characteristics of a 1-bit RF MEMS switch of providing higher return loss under both actuated and unactuated states and also of isolation loss with negligible insertion loss makes it as a prime candidate for phase shifter application. This is presented in this manuscript with a keen focus on improvement capability by changing transmission line width, and also of overlap area; where dielectric constant of the substrate also plays a vital role. Results:: The present work exhibits very low down-capacitance over the spectrum whereas considerable amount of up-capacitance. Also when overall performance in terms of all loss parameters are considered, switch provides very low insertion loss, good return loss under actuated state and standard isolation loss. Conclusion:: Reduction of transmission line width of about 33% improved the performance of the switch by increasing isolation loss. Isolation loss of -40 dB is obtained at actuated condition in higher microwave spectra for SiO 2 at higher overlap area. Down capacitance of ~ 1dB is obtained which is novel as compared with other published literature. Moreover, a better combination of both return loss, isolation loss and insertion loss are reported in this present work compared with all other published data so far.

scholarly journals A Technique for Tunable Filters with Low Insertion Loss and Narrow Bandwidth

2018 ◽  
Vol 38 ◽  
pp. 03039
Author(s):  
Chang Zhou ◽  
Chen Ji ◽  
Gen Ping Wu
Keyword(s):  
Insertion Loss ◽  
Return Loss ◽  
Tunable Filters ◽  
Tunable Filter ◽  
Center Frequency ◽  
Pin Diodes ◽  
Lc Filters ◽  
Narrow Bandwidth ◽  
Low Insertion Loss ◽  
Resonant Capacitor

A technique for tunable filters with low insertion loss and narrow bandwidth is proposed in the form of comb-line structure. Both resonant capacitor with pin-diodes and resonant inductance in the tunable filter were analyzed and the main source of insertion loss was obtained. A series of filters with same pin-diodes, center frequency, absolute bandwidth and low return loss was simulated. The results showed that, by changing the values of the resonant capacitor and inductance, insertion loss of the filter can be greatly restricted. This technique will allow the design of tunable LC filters with low insertion loss and narrow bandwidth.

A low insertion loss low-pass filter based on single comb-shaped spoof surface plasmon polaritons

2019 ◽  
Vol 11 (08) ◽  
pp. 792-796
Author(s):  
Luping Li ◽  
Lijuan Dong ◽  
Peng Chen ◽  
Kai Yang
Keyword(s):  
Surface Plasmon ◽  
Insertion Loss ◽  
Return Loss ◽  
Comparison Result ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Low Pass ◽  
Low Insertion Loss ◽  
Lower Insertion Loss ◽  
Single Comb

AbstractThis paper presents a low insertion loss low-pass filter based on the spoof surface plasmon polariton (SSPP) with single comb-shape. Compared with traditional ones, the proposed filter provides lower insertion loss and return loss by optimizing the structural parameters of the mode conversion and SSPP parts. According to the measurement results, the average insertion loss of the fabricated filter is 0.41 dB and the return loss of which at the near-zero-hertz band is <−25.9 dB. The S parameter comparison result between the unoptimized and optimized filters demonstrates that the optimized filter provides lower insertion loss and return loss, smaller size, and better out-of-band rejection. The dispersion comparison result reveals the reasons behind the improved performances. The better performances of the optimized filter proves that breaking the regularity of traditional SSPP filters is beneficial to the filter's performances.

Broadband Transition between Substrate Integrated Waveguide (SIW) and Rectangular Waveguide for Millimeter-Wave Applications

2011 ◽  
Vol 130-134 ◽  
pp. 1990-1993 ◽  
Author(s):  
Kuang Da Wang ◽  
Wei Hong ◽  
Ke Wu
Keyword(s):  
Millimeter Wave ◽  
Rectangular Waveguide ◽  
Return Loss ◽  
Substrate Integrated Waveguide ◽  
Full Wave ◽  
Vertical Transition ◽  
W Band ◽  
Relative Bandwidth ◽  
Is Design ◽  
Better Than

In this paper, a broadband and simple vertical transition between substrate integrated waveguide and standard air-filled rectangular waveguide is design and experimentally verified. From full-wave simulation of the structure, a relative bandwidth of 19.5% in W-band with return loss better than 20dB is reached. Then, five copies of back-to-back connected transitions are fabricated on RT/Duroid 5880 substrate. The experimental results show that the transition pairs have an average of 15% relative bandwidth with return loss better than 12dB and insert loss lower than 1.2dB. To explain the differences between simulated and tested results, an error analysis is presented.

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