A wideband right-angle transition between thin substrate integrated waveguide and rectangular waveguide based on multi-section structure

2015 ◽  
Vol 8 (2) ◽  
pp. 185-191 ◽  
Author(s):  
Teng Li ◽  
Wenbin Dou

In this paper, a novel wideband right-angle transition between thin substrate integrated waveguide (SIW) and rectangular waveguide (RWG) based on multi-section structure operating at center frequency 31.5 GHz is presented. A multi-section SIW with a rectangular aperture etched on the broad wall and two stepped ridges embedded in the RWG flange are introduced to obtain a wide impedance matching. The simulations show that the bandwidth with return loss better than 20 dB is about 17 GHz. In order to verify our designs, two back-to-back transitions with different lengths are fabricated and measured. The experimental results agree well with simulations. The proposed component shows an insertion loss less than 0.44 dB and a return loss better than 14.5 dB over 12.15 GH, which corresponds to 38.57% bandwidth.

2014 ◽  
Vol 668-669 ◽  
pp. 799-802
Author(s):  
Hai Yan Jin ◽  
Teng Yue

The paper presents a design of rectangular waveguide-SIW transition, which provides a broadband and low insertion loss performance. The broadband transition is realized by using double-rhombus antenna probe inserted into rectangular metal waveguide. The transition is simulated and measured at 9-20GHz. The measured results show that a good agreement with simulation and an insertion loss less than 2.8 dB and a return loss better than 10 dB are obtained at 10–18.5 GHz for a back-to-back structure.


2011 ◽  
Vol 130-134 ◽  
pp. 1990-1993 ◽  
Author(s):  
Kuang Da Wang ◽  
Wei Hong ◽  
Ke Wu

In this paper, a broadband and simple vertical transition between substrate integrated waveguide and standard air-filled rectangular waveguide is design and experimentally verified. From full-wave simulation of the structure, a relative bandwidth of 19.5% in W-band with return loss better than 20dB is reached. Then, five copies of back-to-back connected transitions are fabricated on RT/Duroid 5880 substrate. The experimental results show that the transition pairs have an average of 15% relative bandwidth with return loss better than 12dB and insert loss lower than 1.2dB. To explain the differences between simulated and tested results, an error analysis is presented.


2019 ◽  
Vol 12 (2) ◽  
pp. 116-119
Author(s):  
F. Parment ◽  
A. Ghiotto ◽  
T.-P. Vuong ◽  
L. Carpentier ◽  
K. Wu

AbstractA compact transition between conductor-backed coplanar waveguide (CBCPW) and substrate integrated suspended line (SISL) is presented. Compared to the reported transitions from CBCPW to SISL, performance and compactness are improved. For demonstration purpose, a multilayer transition is designed and fabricated for operation up to 46 GHz. Experimental results, based on an electronic calibration and thru–reflect–line calibration allowing measurement in the 0.01–50 GHz frequency range, demonstrate an insertion loss of 0.59 ± 0.51 dB with a return loss of better than 10 dB in the 10 MHz to 46 GHz frequency range.


2013 ◽  
Vol 760-762 ◽  
pp. 174-177
Author(s):  
Yi Hong Zhou ◽  
Hai Yang Wang ◽  
Jia Yin Li

Based on a linearly tapered antipodal finline, a novel low-loss wideband transition between waveguide and substrate integrated waveguide (SIW) is discussed. Results show that a low insertion loss (1.2-2.1dB) and a return loss better than 15dB across the entire Ka-band are obtained for a back-to-back transition structure.


2012 ◽  
Vol 443-444 ◽  
pp. 362-365 ◽  
Author(s):  
Ya Zhou Dong ◽  
Shi Wei Dong ◽  
Zhong Bo Zhu ◽  
Ying Wang

This paper presents novel designs of Ka band transitions between standard rectangular waveguide and substrate integrated waveguide (SIW). The proposed transitions can provide simultaneous field and impedance matching. The transition with a height-tapered waveguide exhibits outstanding low-loss performance over an ultra-wideband range (entire Ka-band). And the other one with Chebyshev transformers has a compact profile and low loss better than 2dB in a bandwidth of 11GHz at Ka band. The simulation and analysis of the transitions are carried out with Ansoft HFSS.


Electronics ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 51
Author(s):  
Min-Hang Weng ◽  
Chin-Yi Tsai ◽  
De-Li Chen ◽  
Yi-Chun Chung ◽  
Ru-Yuan Yang

This paper presents a miniaturized bandpass filter, which uses half mode substrate integrated waveguide (HMSIW) structure with embedded step impedance structure (SIS). By embedding the stepped impedance structure into the top metal of the waveguide cavity, the center frequency can be quickly shifted to a lower frequency. The operating center frequency of the proposed bandpass filter (BPF) using HMSIW resonators with embedded SIS is tunable as functions of the parameters of the SIS. The design curve is provided. A filter example of the center frequency of the filter at 3.5 GHz is fabricated and measured, having the insertion loss |S21| less than 3 dB, and the return loss |S11| greater than 10 dB. The transmission zeros are located at 2.95 GHz and 3.95 GHz on both sides of the passband, both of which are lower than 30 dB. The simulation result and the measured response conform to the proposed design concept. The proposed HMSIW filter design is in line with the current 5G communication trend.


Author(s):  
Keyur Mahant ◽  
Hiren Mewada ◽  
Amit Patel ◽  
Alpesh Vala ◽  
Jitendra Chaudhari

Aim: In this article, wideband substrate integrated waveguide (SIW) and rectangular waveguide (RWG) transition operating in Ka-band is proposed Objective: In this article, wideband substrate integrated waveguide (SIW) and rectangular waveguide (RWG) transition operating in Ka-band is proposed. Method: Coupling patch etched on the SIW cavity to couple the electromagnetic energy from SIW to RWG. Moreover, metasurface is introduced into the radiating patch to enhance bandwidth. To verify the functionality of the proposed structure back to back transition is designed and fabricated on a single layer substrate using standard printed circuit board (PCB) fabrication technology. Results: Measured results matches with the simulation results, measured insertion loss is less than 1.2 dB and return loss is better than 3 dB for the frequency range of 28.8 to 36.3 GHz. By fabricating transition with 35 SRRs bandwidth of the proposed transition can be improved. Conclusion: The proposed transition has advantages like compact in size, easy to fabricate, low cost and wide bandwidth. Proposed structure is a good candidate for millimeter wave circuits and systems.


This paper presents design and analytical model for Sharp Skirt Dual-Mode Bandpass Filter for RF receivers. Proposed filter is designed using open stub loaded H shaped resonator. Based on analytical model insertion loss S21 and return loss S11 for proposed filter are demonstrated. Inductive Overlaying plate is proposed to control upper passband edge of proposed filter to improve frequency selectivity with fixed center frequency. The proposed filter has sharp frequency selective range from 5.1GHz to 9.2GHz. With overlay plate, frequency selective range is tuned to 5.1GHz-8.6GHz. Without overlaying plate the proposed filter has return loss greater than 10dB and insertion loss of 0.7dB. Lower and upper passband edges are at 5.1GHz and 9.2GHz with attenuation level of 52dB and 54dB respectively. With overlaying plate, the filter has same S 11 and S 21 parameters, but upper passband edge is shifted from 9.2GHz to 8.6GHz


Electronics ◽  
2018 ◽  
Vol 7 (10) ◽  
pp. 215 ◽  
Author(s):  
José Pérez-Escudero ◽  
Alicia Torres-García ◽  
Ramón Gonzalo ◽  
Iñigo Ederra

A simplified design of an inline transition between microstrip and rectangular waveguide is presented in this paper. The transition makes use of a dielectric filled rectangular waveguide (DFRW) as an intermediate step, which simplifies manufacturing and allows for an analytical design. The behavior of the transition has been experimentally validated in the W-band by means of a back-to-back configuration. Good performance has been achieved: a return loss greaterthan 10 dB and mean insertion loss lower than 1 dB.


2018 ◽  
Vol 38 ◽  
pp. 03039
Author(s):  
Chang Zhou ◽  
Chen Ji ◽  
Gen Ping Wu

A technique for tunable filters with low insertion loss and narrow bandwidth is proposed in the form of comb-line structure. Both resonant capacitor with pin-diodes and resonant inductance in the tunable filter were analyzed and the main source of insertion loss was obtained. A series of filters with same pin-diodes, center frequency, absolute bandwidth and low return loss was simulated. The results showed that, by changing the values of the resonant capacitor and inductance, insertion loss of the filter can be greatly restricted. This technique will allow the design of tunable LC filters with low insertion loss and narrow bandwidth.


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