Effects of Low-Energy Electron Irradiation on Enhancement-Mode AlGaN/GaN High-Electron-Mobility Transistors

2013 ◽  
Vol 774-776 ◽  
pp. 876-880
Author(s):  
Chao Chen ◽  
Xing Zhao Liu
Keyword(s):  
Energy Loss ◽  
Electron Irradiation ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Low Energy ◽  
High Electron ◽  
High Electron Mobility ◽  
Enhancement Mode ◽  
Electron Mobility Transistors ◽  
Low Energy Electron

The effects of low energy (1.8 MeV) electron irradiation on enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) have been reported. When the dose up to 1.1×1016cm-2, the saturation drain current and maximal transconductance of E-mode AlGaN/GaN HEMTs increase after irradiation. However, almost no change of threshold voltage and gate leakage current is observed. The results are explained by the creation of positive charges in the AlGaN layer by ionizing energy loss, especially the creation of N vacancies and Ga vacancies by non-ionizing energy loss. Moreover, low-energy electron irradiation could recover the electron mobility.

scholarly journals Gate Capacitance and Off-State Characteristics of E-Mode p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors After Gate Stress Bias

2021 ◽  
Author(s):  
Yu-Chen Lai ◽  
Yi-Nan Zhong ◽  
Ming-Yan Tsai ◽  
Yue-Ming Hsin
Keyword(s):  
Leakage Current ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Gate Capacitance ◽  
Enhancement Mode ◽  
Electron Mobility Transistors ◽  
Higher Power ◽  
State Capacitance

AbstractThis study investigated the gate capacitance and off-state characteristics of 650-V enhancement-mode p-GaN gate AlGaN/GaN high-electron-mobility transistors after various degrees of gate stress bias. A significant change was observed in the on-state capacitance when the gate stress bias was greater than 6 V. The corresponding threshold voltage exhibited a positive shift at low gate stress and a negative shift when the gate stress was greater than 6 V, which agreed with the shift observation from the I–V measurement. Moreover, the off-state leakage current increased significantly after the gate stress exceeded 6 V during the off-state characterization although the devices could be biased up to 1000 V without breakdown. The increase in the off-state leakage current would lead to higher power loss.

Applications of GaN-Based High Electron Mobility Transistors in Large-Size Devices

2015 ◽  
Vol 764-765 ◽  
pp. 486-490
Author(s):  
Chih Hao Wang ◽  
Liang Yu Su ◽  
Finella Lee ◽  
Jian Jang Huang
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Saturation Current ◽  
High Electron Mobility ◽  
Enhancement Mode ◽  
Electron Mobility Transistors ◽  
Large Size ◽  
Novel Design

We demonstrate a novel design of large-size device in AlGaN/GaN high-electron-mobility transistor (HEMT). Depletion mode (D-mode) HEMTs and enhancement mode (E-mode) HEMTs are fabricated in our research. The saturation current of D-mode HEMTs is over 6A. By using Cascode structure, the D-mode HEMT becomes a normally-off device efficiently, and the threshold voltage of it rises from-7V to 2V. By using BCB (Benzocyclobutene) as the passivation, the E-mode HEMT shows an excellent characteristic. Also, when the VGS of the E-mode HEMT is over 9V, it still shows a good performance.

Development of enhancement mode AlN/GaN high electron mobility transistors

2009 ◽  
Vol 94 (26) ◽  
pp. 263505 ◽  
Author(s):  
C. Y. Chang ◽  
S. J. Pearton ◽  
C. F. Lo ◽  
F. Ren ◽  
I. I. Kravchenko ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Enhancement Mode ◽  
Electron Mobility Transistors

Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance

2004 ◽  
Vol 43 (4B) ◽  
pp. 2255-2258 ◽  
Author(s):  
Akira Endoh ◽  
Yoshimi Yamashita ◽  
Keiji Ikeda ◽  
Masataka Higashiwaki ◽  
Kohki Hikosaka ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Enhancement Mode ◽  
Electron Mobility Transistors ◽  
Rf Performance ◽  
Recessed Gate
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