Thermal Behavior of AlTiN Free-Standing Coating by Cathodic Arc Deposition

2014 ◽  
Vol 900 ◽  
pp. 538-542
Author(s):  
Po Yi Tsou ◽  
Wei Yu Ho ◽  
Yen Shuo Chang ◽  
Guo Kai Jiang ◽  
Chien Ju Chiu ◽  
...  
Keyword(s):  
Oxidation Resistance ◽  
Annealing Temperature ◽  
Bulk Material ◽  
Recrystallization Process ◽  
Free Standing ◽  
Cathodic Arc Deposition ◽  
Cathodic Arc ◽  
New Phase ◽  
Arc Deposition ◽  
Thermal And Chemical Stability

(Ti,Al)N coatings possess superior hardness, good thermal and chemical stability. To further study the oxidation resistance, the arc-deposited AlTiN bulk material was collected from the substrate shutter of a commercial coating system deposited for over 100 batches. The thermal behaviour of the materials was studied by TGA/DSC with different annealing temperature or different atmospheres. The results show that AlTiN bulk material annealed in nitrogen exhibits the denser structure and thermal stability up to 1000°C. The oxidation resistance of the AlTiN can reach to 800°C. Annealed at 600 ~ 700°C proceed the recrystallization process which denser the structure. New phase of TiO2is formed by incorporate oxygen in exchange of nitrogen. nanoscaled 1D wire formation occurred at the 1000°C for 3 hours in air.

Fabrication of rutile TiO2 thin films by low-temperature, bias-assisted cathodic arc deposition and their dielectric properties

2006 ◽  
Vol 21 (4) ◽  
pp. 844-850 ◽  
Author(s):  
A.P. Huang ◽  
Paul K. Chu ◽  
L. Wang ◽  
W.Y. Cheung ◽  
J.B. Xu ◽  
...  
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Gate Dielectrics ◽  
Tio2 Thin Films ◽  
Dielectric Characteristics ◽  
Temperature Bias ◽  
Cathodic Arc Deposition ◽  
Cathodic Arc ◽  
Thermodynamic Instability ◽  
Arc Deposition

The use of rutile-type titanium dioxide (TiO2) thin films as advanced gate dielectrics has been hampered by thermodynamic instability during the high deposition or annealing temperature of 800 °C. In this work, we demonstrate that rutile-type TiO2 thin films can be produced on p-type Si (100) at lower substrate temperature by means of bias-assisted cathodic arc deposition. The influence of the substrate bias on the microstructural and dielectric characteristics of the TiO2 thin films is investigated in detail. Our results show that by applying a suitable bias to the Si substrate, as-deposited rutile-type TiO2 thin films can be obtained at 450 °C. The permittivity of the materials increases significantly from 21 up to 76. The interfacial and electrical properties of TiO2/Si (100) are also improved. The effects and mechanism of the bias on the microstructural and dielectric characteristics are described.

Corrosion resistance of TiN/TiAlN-coated ADI by cathodic arc deposition

2006 ◽  
Vol 421 (1-2) ◽  
pp. 182-190 ◽  
Author(s):  
Cheng-Hsun Hsu ◽  
Ming-Li Chen ◽  
Kuei-Laing Lai
Keyword(s):  
Corrosion Resistance ◽  
Cathodic Arc Deposition ◽  
Cathodic Arc ◽  
Arc Deposition

Structural Characteristics of Diamond-Like Carbon Films Synthesized by Different Methods

2017 ◽  
Vol 743 ◽  
pp. 112-117
Author(s):  
Alexander Zolkin ◽  
Anna Semerikova ◽  
Sergey Chepkasov ◽  
Maksim Khomyakov
Keyword(s):  
Amorphous Phase ◽  
Ion Beam ◽  
High Energy ◽  
Carbon Films ◽  
Ion Source ◽  
Ordered Structure ◽  
Deposition Technique ◽  
Cathodic Arc Deposition ◽  
Cathodic Arc ◽  
Arc Deposition

In the present study, the Raman spectra of diamond-like amorphous (a-C) and hydrogenated amorphous (a-C:H) carbon films on silicon obtained using the ion-beam methods and the pulse cathodic arc deposition technique were investigated with the aim of elucidating the relation between the hardness and structure of the films. The hardness of the samples used in the present study was 19 – 45 GPa. Hydrogenated carbon films were synthesized using END–Hall ion sources and a linear anode layer ion source (LIS) on single-crystal silicon substrates. The gas precursors were CH4 and C3H8, and the rate of the gas flow fed into the ion source was 4.4 to 10 sccm. The ion energies ranged from 150 to 600 eV. a-C films were deposited onto Si substrates using the pulse cathodic arc deposition technique. The films obtained by the pulse arc technique contained elements with an ordered structure. In the films synthesized using low- (150 eV) and high-energy (600 eV) ions beams, an amorphous phase was the major phase. The significant blurriness of the diffraction rings in the electron diffraction patterns due to a large film thickness (180 – 250 nm) did not allow distinctly observing the signals from the elements with an ordered structure against the background of an amorphous phase.

Cathodic arc deposition of (Al,Cr)2O3: Macroparticles and cathode surface modifications

2011 ◽  
Vol 206 (6) ◽  
pp. 1454-1460 ◽  
Author(s):  
M. Pohler ◽  
R. Franz ◽  
J. Ramm ◽  
P. Polcik ◽  
C. Mitterer
Keyword(s):  
Cathode Surface ◽  
Surface Modifications ◽  
Cathodic Arc Deposition ◽  
Cathodic Arc ◽  
Arc Deposition
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