Charged Defect Formation Energies in TiO2 Using the Supercell Approximation

2006 ◽  
Vol 45 ◽  
pp. 1-8 ◽  
Author(s):  
Jun He ◽  
Mike W. Finnis ◽  
Elizabeth C. Dickey ◽  
Susan B. Sinnott
Keyword(s):  
Point Defects ◽  
Density Functional ◽  
Oxygen Vacancies ◽  
Defect Formation ◽  
Density Functional Theory Calculations ◽  
Wide Band ◽  
Wide Band Gap ◽  
Influence Of Temperature On ◽  
Formation Energies ◽  
Positively Charged

TiO2 has been intensively studied as a wide band-gap transition metal oxide partially due to the multi-valence nature of its cation. Here, density-functional theory calculations within the supercell approximation are carried out to determine the preferred charge state of point defects in rutile TiO2. The first component of this work is to investigate the dependence of the defect formation energies on supercell size and the electrostatic Makov-Payne correction. The results show that the Makov-Payne correction improves the convergence of defect formation energies as a function of supercell size for positively charged titanium interstitials and negatively charged titanium vacancies. However, in the case of positively charged oxygen vacancies, applying the Makov-Payne correction gives the wrong sign for the defect formation energy correction. This is attributed to the shallow nature of the transition levels for this defect in TiO2. Finally, we combine the calculated defect formation energies with thermodynamic data to evaluate the influence of temperature on the relative stabilities of point defects. The results indicate that when the Makov- Payne correction is applied, a stable charge transition occurs for titanium interstitials. In addition, as the temperature increases, the dominant point defect in TiO2 changes from oxygen vacancies to titanium interstitials.

scholarly journals Ab Initio Study of MgTe Self-Interstitial (Mgi and Tei): A Wide Band Gap Semiconductor

2017 ◽  
Vol 16 ◽  
pp. 47-51
Author(s):  
Emmanuel Igumbor ◽  
Ezekiel Omotoso ◽  
Walter Ernst Meyer
Keyword(s):  
Band Gap ◽  
Density Functional ◽  
Defect Formation ◽  
Local Density ◽  
Wide Band ◽  
Shallow Donor ◽  
Generalized Gradient ◽  
Wide Band Gap ◽  
Functional Theory ◽  
Formation Energies

We present results of defect formation energies and charge state thermodynamic transition levels of Mg and Te interstitials in MgTe wurzite structure. We use the generalized gradient approximation and local density approximation functionals in the framework of density functional theory for all calculations. The formation energies of the Mg and Te interstitials in MgTe for both the tetrahedral and hexagonal configurations were obtained. The Mg and Te interstitials in MgTe depending on the functional, introduced transition state levels that are either donor or acceptor within the band gap of the MgTe. The Te interstitial exhibit charge states controlled metastability, negative-U and DX centre properties. The Mg interstitial acts as deep or shallow donor and there is no evidence of acceptor levels found for the Mg interstitial.

scholarly journals The Effect of Defect Disorder on the Electronic Structure of Rutile TiO2-x

2006 ◽  
Vol 251-252 ◽  
pp. 1-12 ◽  
Author(s):  
Faruque M. Hossain ◽  
Graeme E. Murch ◽  
L. Sheppard ◽  
Janusz Nowotny
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Point Defects ◽  
Density Functional ◽  
Defect Formation ◽  
Energy Levels ◽  
Defect Energy ◽  
Defect Disorder ◽  
Effect Of Oxygen ◽  
Formation Energies

The purpose of this work is to study the effect of bulk point defects on the electronic structure of rutile TiO2. The paper is focused on the effect of oxygen nonstoichiometry in the form of oxygen vacancies, Ti interstitials and Ti vacancies and related defect disorder on the band gap width and on the local energy levels inside the band gap. Ab initio density functional theory is used to calculate the formation energies of such intrinsic defects and to detect the positions of these defect induced energy levels in order to visualize the tendency of forming local mid-gap bands. Apart from the formation energy of the Ti vacancies (where experimental data do not exist) our calculated results of the defect formation energies are in fair agreement with the experimental results and the defect energy levels consistently support the experimental observations. The calculated results indicate that the exact position of defect energy levels depends on the estimated band gap and also the charge state of the point defects of TiO2.

Simulating Radiation-Induced Defect Formation in Pyrochlores

2013 ◽  
Vol 1514 ◽  
pp. 15-20
Author(s):  
David S.D. Gunn ◽  
John A. Purton ◽  
Ilian T. Todorov
Keyword(s):  
Point Defects ◽  
Oxygen Vacancies ◽  
Defect Formation ◽  
Migration Energy ◽  
Cation Disorder ◽  
Pair Defect ◽  
Radiation Induced ◽  
Ab Inito ◽  
Formation Energies ◽  
Selection Of

ABSTRACTThe accuracy and robustness of new Buckingham potentials for the pyrochlores Gd2Ti2O7 and Gd2Zr2O7 is demonstrated by calculating and comparing values for a selection of point defects with those calculated using a selection of other published potentials and our own ab inito values. Frenkel pair defect formation energies are substantially lowered in the presence of a small amount of local cation disorder. The activation energy for oxygen vacancy migration between adjacent O48f sites is calculated for Ti and Zr pyrochlores with the energy found to be lower for the non-defective Ti than for the Zr pyrochlore by ∼0.1 eV. The effect of local cation disorder on the VO48f → VO48f migration energy is minimal for Gd2Ti2O7, while the migration energy is lowered typically by ∼43 % for Gd2Zr2O7. As the healing mechanisms of these pyrochlores are likely to rely upon the availability of oxygen vacancies, the healing of a defective Zr pyrochlore is predicted to be faster than for the equivalent Ti pyrochlore.

Theoretical Study of Native Point Defects in Aln and InN

1997 ◽  
Vol 482 ◽  
Author(s):  
C. Stampfl ◽  
Chris G. Van De Walle
Keyword(s):  
Point Defects ◽  
Density Functional ◽  
Defect Formation ◽  
Local Density ◽  
Nitrogen Vacancy ◽  
Type Material ◽  
Generalized Gradient ◽  
Native Point Defects ◽  
Zinc Blende ◽  
Formation Energies

AbstractWe have studied native point defects in AlN and InN using density-functional calculations employing both the local-density and generalized gradient approximations for the exchange-correlation functional. For both materials we find that the nitrogen vacancy acts as a compensating center in p-type material. For AIN in the zinc-blende structure, the aluminum interstitial has an equally low formation energy as the nitrogen vacancy. For n-type material the aluminum vacancy is the dominant compensating center in AlN. For n-type InN, all defect formation energies are high.

scholarly journals Study on the adsorption selection of CH$$_4$$ on CuO (110) versus (111) surfaces: a density functional theory study

2021 ◽  
Vol 3 (4) ◽  
Author(s):  
Long Lin ◽  
Linwei Yao ◽  
Shaofei Li ◽  
Zhengguang Shi ◽  
Kun Xie ◽  
...  
Keyword(s):  
Density Functional Theory ◽  
Adsorption Capacity ◽  
Active Sites ◽  
Density Functional ◽  
Oxygen Vacancies ◽  
Density Functional Theory Calculations ◽  
Density Functional Theory Study ◽  
Functional Theory ◽  
Strong Adsorption ◽  
Selection Of

AbstractFinding the active sites of suitable metal oxides is a key prerequisite for detecting CH$$_4$$ 4 . The purpose of the paper is to investigate the adsorption of CH$$_4$$ 4 on intrinsic and oxygen-vacancies CuO (111) and (110) surfaces using density functional theory calculations. The results show that CH$$_4$$ 4 has a strong adsorption energy of −0.370 to 0.391 eV at all site on the CuO (110) surface. The adsorption capacity of CH$$_4$$ 4 on CuO (111) surface is weak, ranging from −0.156 to −0.325 eV. In the surface containing oxygen vacancies, the adsorption capacity of CuO surface to CH$$_4$$ 4 is significantly stronger than that of intrinsic CuO surface. The results indicate that CuO (110) has strong adsorption and charge transfer capacity for CH$$_4$$ 4 , which may provide experimental guidance.

scholarly journals Imaging and identification of point defects in PtTe2

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Kuanysh Zhussupbekov ◽  
Lida Ansari ◽  
John B. McManus ◽  
Ainur Zhussupbekova ◽  
Igor V. Shvets ◽  
...  
Keyword(s):  
Point Defects ◽  
Density Functional ◽  
Transition Metal Dichalcogenides ◽  
Density Functional Theory Calculations ◽  
Charge Carrier Mobility ◽  
Scanning Tunneling Spectroscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Recombination Rates ◽  
And Performance

AbstractThe properties and performance of two-dimensional (2D) materials can be greatly affected by point defects. PtTe2, a 2D material that belongs to the group 10 transition metal dichalcogenides, is a type-II Dirac semimetal, which has gained a lot of attention recently due to its potential for applications in catalysis, photonics, and spintronics. Here, we provide an experimental and theoretical investigation of point defects on and near the surface of PtTe2. Using scanning tunneling microscopy and scanning tunneling spectroscopy (STS) measurements, in combination with first-principle calculations, we identify and characterize five common surface and subsurface point defects. The influence of these defects on the electronic structure of PtTe2 is explored in detail through grid STS measurements and complementary density functional theory calculations. We believe these findings will be of significance to future efforts to engineer point defects in PtTe2, which is an interesting and enticing approach to tune the charge-carrier mobility and electron–hole recombination rates, as well as the site reactivity for catalysis.

Hg1-xCdxTe: Defect Structure Overview

1990 ◽  
Vol 216 ◽  
Author(s):  
M.A. Berding ◽  
A. Sher ◽  
A.-B. Chen
Keyword(s):  
Point Defects ◽  
Defect Structure ◽  
Defect Formation ◽  
Activation Energies ◽  
Mass Action ◽  
Native Defect ◽  
Native Point Defects ◽  
Vacancy Migration ◽  
Formation Energies ◽  
Diffusion Activation

ABSTRACTNative point defects play an important role in HgCdTe. Here we discuss some of the relevant mass action equations, and use recently calculated defect formation energies to discuss relative defect concentrations. In agreement with experiment, the Hg vacancy is found to be the dominant native defect to accommodate excess tellurium. Preliminary estimates find the Hg antisite and the Hg interstitial to be of comparable densities. Our calculated defect formation energies are also consistent with measured diffusion activation energies, assuming the interstitial and vacancy migration energies are small.

A complete ab initio thermodynamic and kinetic catalogue of the defect chemistry of hematite α-Fe2O3, its cation diffusion, and sample donor dopants

2021 ◽  
Author(s):  
Shehab Shousha ◽  
Sarah Khalil ◽  
Mostafa Youssef
Keyword(s):  
Density Functional Theory ◽  
Density Functional ◽  
Defect Formation ◽  
Defect Chemistry ◽  
Cation Diffusion ◽  
Functional Theory ◽  
Migration Barriers ◽  
Hubbard U ◽  
And Migration ◽  
Formation Energies

This paper studies comprehensively the defect chemistry and cation diffusion in α-Fe2O3. Defect formation energies and migration barriers are calculated using density functional theory with a theoretically calibrated Hubbard U...

Oxygen vacancy migration in CSZ using density functional theory

2008 ◽  
Vol 1122 ◽  
Author(s):  
Byeong-Eon Lee ◽  
Dae-Hee Kim ◽  
Yeong-Cheol Kim
Keyword(s):  
Density Functional Theory ◽  
Oxygen Vacancy ◽  
Density Functional ◽  
Oxygen Vacancies ◽  
Nearest Neighbor ◽  
Functional Theory ◽  
The Third ◽  
Vacancy Migration ◽  
Neighbor Site ◽  
Formation Energies

AbstractWe studied oxygen migration in calcia-stabilized cubic zirconia (CSZ) using density functional theory. A Ca atom was substituted for a Zr atom in a 2×2×2 ZrO2 cubic supercell, and an oxygen vacancy was produced to satisfy the charge neutrality condition. We found that the formation energies of an oxygen vacancy, as a function of its location with respect to the Ca atom, were varied. The relative formation energies of the oxygen vacancies located at the first-, second-, third-, and fourth-nearest-neighbors were 0.0, −0.07, 0.19, and 0.19 eV, respectively. Therefore, the oxygen vacancy located at the second-nearest-neighbor site of the Ca atom was the most favorable, the oxygen vacancy located at the first-nearest-neighbor site was the second most favorable, and the oxygen vacancies at the third- and fourth-nearest-neighbor sites were the least favorable. We also calculated the energy barriers for the oxygen vacancy migration between oxygen sites. The energy barriers between the first and the second nearest sites, the second and third nearest sites, and the third and fourth nearest sites were 0.11, 0.46, and 0.23 eV, respectively. Therefore, the oxygen vacancies favored the first- and second-nearest-neighbor oxygen sites when they drifted under an electric field.

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