scholarly journals Low-Temperature Sintering of Apatite-Type Lanthanum Silicate with Fluoride Additives

2010 ◽  
Vol 62 ◽  
pp. 235-240
Author(s):  
Junichi Takahashi ◽  
Hidetoshi Honda ◽  
Takaya Akashi ◽  
Kazutomo Abe ◽  
Hidenobu Itoh ◽  
...  

Various fluorides (3 - 8 wt%) were added to a La9.33Si6O26 (LSO) powder synthesized by calcining the corresponding oxides mixture at 1100°C for 4 h. The addition of BaF2, AlF3 or Ba3Al2F12 caused an appreciable and substantial increase in bulk density after sintering at 1400º and 1450°C, respectively. These fluorides melt below 1400°C to form liquid phase which could assist the densification at low temperatures. Abnormal grain growth was observed for LSO samples with the addition of AlF3 and Ba3Al2F12, but it was effectively suppressed by stepwise sintering at 1400º and 1450°C. The BaF2 addition brought about the simultaneous promotion of densification and moderate grain growth, leading to the production of a densified LSO sample showing a conductivity of 1.5 x 10–2 Scm–1 at 800°C with an activation energy of 1.23 eV.

2009 ◽  
Vol 24 (1) ◽  
pp. 237-244 ◽  
Author(s):  
Seung Hwan Jo ◽  
P. Muralidharan ◽  
Do Kyung Kim

Highly sinterable La10Si6O27 and La10Si5.5M0.5O27 (M = Mg, and Al) nanopowders with apatite-type structure have been synthesized via a homogeneous precipitation method using diethylamine (DEA) as a precipitant. The synthetic approach using an organic precipitant with dispersant characteristics is advantageous in configuring weakly agglomerated nanopowders, leading to desirable sintering activity. X-ray diffraction powder patterns confirmed the single-phase crystalline lanthanum silicate of hexagonal apatite structure at 800 °C, which is a relatively lower calcination temperature compared to conventionally prepared samples. Transmission electron microscopy images revealed particles ∼30 nm in size with a high degree of crystallinity. A dense grain morphology was recognized from the scanning electron microscopy images of the polished surface of the pellets that were sintered at 1400 and 1500 °C for 10 h. This low-temperature sintering is significant because conventional powder processing requires a temperature above 1700 °C to obtain the same dense electrolyte. The doped-lanthanum silicate electrolyte prepared by the DEA process and sintered at 1500 °C for 10 h exhibited electrical conductivity comparable with samples prepared at much higher sintering temperature (>1700 °C).


2010 ◽  
Vol 25 (3) ◽  
pp. 471-475 ◽  
Author(s):  
Sea-Hoon Lee ◽  
Byung-Nam Kim ◽  
Hidehiko Tanaka

Al8B4C7 was used as a sintering additive for the densification of nano-SiC powder. The average grain size was approximately 70 nm after sintering SiC-12.5wt% Al8B4C7 at 1550 °C. The densification rate strongly depended on the sintering temperature and the applied pressure. The rearrangement of SiC particles occurred at the initial shrinkage, while viscous flow and liquid phase sintering became important at the middle and final stage of densification.


2011 ◽  
Vol 31 (5) ◽  
pp. 755-762 ◽  
Author(s):  
Yoon Ho Heo ◽  
Sang-Chae Jeon ◽  
John G. Fisher ◽  
Si-Young Choi ◽  
Kang-Heon Hur ◽  
...  

2001 ◽  
Vol 16 (4) ◽  
pp. 938-944 ◽  
Author(s):  
V. L. Tellkamp ◽  
S. Dallek ◽  
D. Cheng ◽  
E. J. Lavernia

A nanostructured 5083 Al–Mg alloy powder was subjected to various thermal heat treatments in an attempt to understand the fundamental mechanisms of recovery, recrystallization and grain growth as they apply to nanostructured materials. A low-temperature stress relaxation process associated with reordering of the grain boundaries was found to occur at 158 °C. A bimodal restructuring of the grains occurred at 307 °C for the unconstrained grains and 381 °C for the constrained grains. An approximate activation energy of 5.6 kJ/mol was found for the metastable nanostructured grains, while an approximate activation energy of 142 kJ/mol was found above the restructuring temperature.


1977 ◽  
Vol 55 (24) ◽  
pp. 2142-2144 ◽  
Author(s):  
D. E. Brodie ◽  
P. K. Lim ◽  
R. T. S. Shiah

At lower temperatures, the photoconductivity of near stoichiometric or slightly selenium-rich a-ZnSe increases with an activation energy of 0.04 eV as the temperature decreases. Slightly Zn-rich samples do not exhibit this behaviour. This paper presents a model and a possible mechanism for this effect, which involves intimate valence alternation pairs as the controlling recombination centres at low temperatures. A similar effect has been observed in tellurium-rich a-CdTe.


2007 ◽  
Vol 556-557 ◽  
pp. 367-370 ◽  
Author(s):  
Michael Krieger ◽  
Kurt Semmelroth ◽  
Heiko B. Weber ◽  
Gerhard Pensl ◽  
Martin Rambach ◽  
...  

We report on admittance spectroscopy (AS) investigations taken on aluminum (Al)- doped 6H-SiC crystals at low temperatures. Admittance spectra taken on Schottky contacts of highly doped samples (NA ≥ 7.2×1017 cm-3) reveal two series of conductance peaks, which cause two different slopes of the Arrhenius plot. The steep slope is attributed to the Al acceptor, while the flatter one - obtained from the low temperature peaks - is attributed to the activation energy ε3 of nearest neighbor hopping. We propose a model, which explains the unexpected sharpness of the low temperature conductance peaks and the disappearance of these peaks for low acceptor concentrations. The model is verified by simulation, and the AS results are compared with corresponding results obtained from resistivity measurements taken on 4H- and the identical 6HSiC samples.


2019 ◽  
Vol 181 ◽  
pp. 108080 ◽  
Author(s):  
Zhi Dong ◽  
Nan Liu ◽  
Weiqiang Hu ◽  
Xiangwei Kong ◽  
Zongqing Ma ◽  
...  

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