Preparation and Characterization of Dielectric Behavior of A2/3Cu3Ti4O12 (A = Nd, Sm, Gd, Dy) Ceramics

2010 ◽  
Vol 67 ◽  
pp. 28-33 ◽  
Author(s):  
Dorota Szwagierczak ◽  
Jan Kulawik

In this work perovskite materials A2/3Cu3Ti4O12 (where A=Nd, Sm, Gd, Dy) were synthesized by conventional solid state reaction and sintered at 1000-1100°C. X-ray diffraction analysis confirmed single-phase composition of the investigated ceramics. Dielectric properties of the samples were investigated in the temperature range from -55 to 300°C at frequencies 10 Hz – 2 MHz. Dielectric permittivities of the ceramics are very high, exceeding 105 at low frequencies and/or elevated temperatures (above 50°C) and 103 at higher frequencies and/or low temperatures. Two observed contributions to the dielectric response are attributed to semiconducting grains and more resistive grain boundaries. For Nd2/3Cu3Ti4O12 and Sm2/3Cu3Ti4O12 ceramics, the observed low- and high frequency plateaus are lower than those for Gd2/3Cu3Ti4O12 and Dy2/3Cu3Ti4O12. The relaxation times determined on the basis of impedance data were found to decrease with increasing atomic number of lanthanide. The analysis of the impedance spectroscopic data and the microstructure implies spontaneous formation of internal barrier layer capacitors in the investigated materials.

2018 ◽  
Vol 36 (1) ◽  
pp. 1-6 ◽  
Author(s):  
H. Menasra ◽  
Z. Necira ◽  
K. Bounabe ◽  
M. Abba ◽  
A. Meklid ◽  
...  

Abstract Pb(1-x)Lax [(Zr0.6Ti0.4)(1-x)(Mn1/3Sb2/3)x]O3 ceramics with x = 0.02, 0.03, 0.04, and 0.05 were synthesized by using a conventional solid state reaction route. The influence of La, Mn, and Sb contents on phase structure, microstructure, and electric properties were investigated. The results of X-ray diffraction (XRD) show that the phase structure of the ceramics transforms from rhombohedral phase to tetragonal phase. However, the minority pyrochlore phase appears on the micrographs of XRD and SEM if the doping concentration is greater than 2 mol%. The grain size of the ceramics gradually increases (from 1.36 μm to 1.57 μm) with increasing doping. The dielectric properties of the ceramics have been measured as a function of temperature in the range of 20 °C to 430 °C at 1 kHz. The results indicate that the transition temperature and the maximum dielectric constant decrease with increasing PL-PMS content in the system. These results clearly show the significance of PL-PMS in controlling the dielectric behavior of the PL-PMS-PZT system.


2016 ◽  
Vol 06 (01) ◽  
pp. 1650009 ◽  
Author(s):  
Jianming Deng ◽  
Xiaojun Sun ◽  
Saisai Liu ◽  
Laijun Liu ◽  
Tianxiang Yan ◽  
...  

CaCu3Ti[Formula: see text]YxO[Formula: see text] (0[Formula: see text]0.12) ceramics were fabricated with conventional solid-state reaction method. Phase structure and microstructure of prepared ceramics were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The impedance and modulus tests both suggested the existence of two different relaxation behavior, which were attributed to bulk and grain boundary response. In addition, the conductivity and dielectric permittivity showed a step-like behavior under 405[Formula: see text]K. Meanwhile, frequency independence of dc conduction became dominant when above 405[Formula: see text]K. In CCTO ceramic, rare earth element Y[Formula: see text] ions as an acceptor were used to substitute Ti sites, decreasing the concentration of oxygen vacancy around grain-electrode and grain boundary. The reason to the reduction of dielectric behavior in low frequencies range was associated with the Y doping in CCTO ceramic.


2018 ◽  
Vol 766 ◽  
pp. 180-185
Author(s):  
Jiraporn Dangsak ◽  
Sukum Eitssayeam ◽  
Tawee Tunkasiri ◽  
Uraiwan Intatha

The solid solution of lead-free (Ba0.4Sr0.4Ca0.2) (Zr0.05Ti0.95) O3 (BSCZT) ceramics were prepared from the seed induced method. The Ba0.6Sr0.4TiO3 (BST) were used as the seed crystals, they were prepared using the molten salt technique. The phase formation was examined using the X-ray diffraction technique (XRD). It was found that the single phase perovskite structure of BST was obtained at a temperature of 800°C. The ceramics were prepared using the conventional solid state reaction by adding of BST seed crystals at 2.5, 5, 7.5 and 10 mol%. The structure showed that a single phase perovskite was obtained after sintered at 1400 °C. This work confirmed that BST seed crystal successfully diffused into BSCZT ceramic and the BSCZT ceramic with a seed crystal showed higher dielectric than the BSCZT ceramic without seed crystals.


Author(s):  
Edgar S. Etz ◽  
Thomas D. Schroeder ◽  
Winnie Wong-Ng

We are investigating by Raman microprobe measurements the superconducting and related phases in the LnBa2Cu3O7-x (for x=0 to 1) system where yttrium has been replaced by several of the lanthanide (Ln = Nd,Sm,Eu,Ho,Er) elements. The aim is to relate the observed optical spectra (Raman and fluorescence) to the compositional and structural properties of these solids as part of comprehensive materials characterization. The results are correlated with the methods of synthesis, the processing techniques of these materials, and their superconducting properties. Of relevance is the substitutional chemistry of these isostructural systems, the differences in the spectra, and their microanalytical usefulness for the detection of impurity phases, and the assessment of compositional homogeneity. The Raman spectra of most of these compounds are well understood from accounts in the literature.The materials examined here are mostly ceramic powders prepared by conventional solid state reaction techniques. The bulk samples are of nominally single-phase composition as determined by x-ray diffraction.


2006 ◽  
Vol 301 ◽  
pp. 177-180 ◽  
Author(s):  
Yuichiro Kuroki ◽  
Tomoichiro Okamoto ◽  
Masasuke Takata

Copper aluminum disulfide (CuAlS2) powders were synthesized in an evacuated ampoule at elevated temperatures. X-ray diffraction analysis revealed that the powders heated at temperatures higher than 800oC were single-phase CuAlS2. In the cathodoluminescence (CL) spectra measured at room temperature, the powders heated at temperatures higher than 600oC exhibited a visible emission peak at approximately 1.8 eV and a distinct ultraviolet emission peak at 3.45 eV. The powder heated at 700oC showed the maximum intensity of ultraviolet emission which is considered to be associated with excitons.


1999 ◽  
Vol 4 (S1) ◽  
pp. 429-434 ◽  
Author(s):  
C. H. Wei ◽  
Z. Y. Xie ◽  
J. H. Edgar ◽  
K. C. Zeng ◽  
J. Y. Lin ◽  
...  

Boron was incorporated into GaN in order to determine its limits of solubility, its ability of reducing the lattice constant mismatch with 6H-SiC, as well as its effects on the structural and optical properties of GaN epilayers. BxGa1−xN films were deposited on 6H-SiC (0001) substrates at 950 °C by low pressure MOVPE using diborane, trimethylgallium, and ammonia as precursors. A single phase alloy with x=0.015 was successfully produced at a gas reactant B/Ga ratio of 0.005. Phase separation into pure GaN and BxGa1−xN alloy with x=0.30 was deposited for a B/Ga reactant ratio of 0.01. This is the highest B fraction of the wurtzite structure alloy ever reported. For B/Ga ratio ≥ 0.02, no BxGa1−xN was formed, and the solid solution contained two phases: wurtzite GaN and BN based on the results of Auger and x-ray diffraction. The band edge emission of BxGa1−xN varied from 3.451 eV for x=0 with FWHM of 39.2 meV to 3.465 eV for x=0.015 with FWHM of 35.1 meV. The narrower FWHM indicated that the quality of GaN epilayer was improved with small amount of boron incorporation.


2020 ◽  
Vol 850 ◽  
pp. 267-272 ◽  
Author(s):  
Regina Burve ◽  
Vera Serga ◽  
Aija Krūmiņa ◽  
Raimons Poplausks

Due to its magnetic, electrical, absorption, and emission properties, nanoscale gadolinium oxide is widely used in various fields. In this research, nanocrystalline Gd2O3 powders and films on glass substrates have been produced by the extraction-pyrolytic method. X-ray diffraction analysis revealed the formation of single phase Gd2O3 with cubic crystal structure and the mean crystallite size from 9 to 25 nm in all produced materials. The morphology of samples has been characterized by scanning electron microscopy and transmission electron microscopy.


2015 ◽  
Vol 1107 ◽  
pp. 45-52
Author(s):  
Aaliyawani Ezzerin Sinin ◽  
Walter Charles Primus ◽  
Abdul Halim Shaari ◽  
Zainal Abidin Talib ◽  
Sinin Hamdan

Ceramic sample of La0.70Ba0.30Mn0.40Ti0.60O3 oxide has been prepared by the conventional solid-state reaction method. The sintered sample was characterized by using x-ray diffraction (XRD) and low frequency LCR meter. XRD result shows that the sample has a cubic structure with the existence of impurity phase. The dielectric properties of La0.70Ba0.30Mn0.40Ti0.60O3 measured from room temperature to 200°C shows that the dielectric permittivity is temperature dependence with strong dispersion at low frequencies. A circuit model based on the universal capacitor response function is also being used to represent the dielectric properties of the sample.


1998 ◽  
Vol 537 ◽  
Author(s):  
C. H. Wei ◽  
Z. Y. Xie ◽  
J. H. Edgar ◽  
K. C. Zeng ◽  
J. Y. Lin ◽  
...  

AbstractBoron was incorporated into GaN in order to determine its limits of solubility, its ability of reducing the lattice constant mismatch with 6H-SiC, as well as its effects on the structural and optical properties of GaN epilayers. BxGal-xN films were deposited on 6H-SiC (0001) substrates at 950 °C by low pressure MOVPE using diborane, trimethylgallium, and ammonia as precursors. A single phase alloy with x=0.015 was successfully produced at a gas reactant B/Ga ratio of 0.005. Phase separation into pure GaN and BxGal-xN alloy with x=0.30 was deposited for a B/Ga reactant ratio of 0.01. This is the highest B fraction of the wurtzite structure alloy ever reported. For B/Ga ratio ≥ 0.02, no BxGal-xN was formed, and the solid solution contained two phases: wurtzite GaN and BN based on the results of Auger and x-ray diffraction. The band edge emission of BxGal-xN varied from 3.451 eV for x=0 with FWHM of 39.2 meV to 3.465 eV for x=0.015 with FWHM of 35.1 meV. The narrower FWHM indicated that the quality of GaN epilayer was improved with small amount of boron incorporation.


2008 ◽  
Vol 368-372 ◽  
pp. 754-757
Author(s):  
Hasan Gocmez ◽  
Hirotaka Fujimori

The citrate gel method, similar to the polymerized complex method, was used to synthesize homogenous tetragonal zirconia at 800oC and 1000oC. Nanocrystalline tetragonal single phase has been fully stabilized with 3, 7, 10 mol% CaO and 10, 15 mol% MgO at 800oC, respectively. In addition, the XRD analysis showed the absence of monoclinic phase after addition of 7 and 10 mol% CaO into zirconia-based solid solutions, which have been fully stabilized both 800oC and 1000oC. The crystallite sizes of the t-ZrO2 with 3, 7 and 10 mol% CaO at 1000oC were 32, 28 and 29nm, respectively. For ZrO2- x mol% MgO (x=3, 10, 15) solid solution, the crystallite sizes of samples at 800oC were less than 29nm, however it was increased up to 69nm at 1000oC. The prepared gel and subsequent heat-treated powders were characterized by X-ray diffraction (XRD), Raman spectroscopy and transmission electron microscopy (TEM) to get detail information regarding to differentiation of polymorphs of zirconia as well as formation of powders.


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