Growth and Characterization of BxGal-xN on 6H-SiC (0001) by MOVPE

1998 ◽  
Vol 537 ◽  
Author(s):  
C. H. Wei ◽  
Z. Y. Xie ◽  
J. H. Edgar ◽  
K. C. Zeng ◽  
J. Y. Lin ◽  
...  
Keyword(s):  
Single Phase ◽  
Band Edge Emission ◽  
Reactant Ratio ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Edge Emission ◽  
X Ray ◽  
Two Phases

AbstractBoron was incorporated into GaN in order to determine its limits of solubility, its ability of reducing the lattice constant mismatch with 6H-SiC, as well as its effects on the structural and optical properties of GaN epilayers. BxGal-xN films were deposited on 6H-SiC (0001) substrates at 950 °C by low pressure MOVPE using diborane, trimethylgallium, and ammonia as precursors. A single phase alloy with x=0.015 was successfully produced at a gas reactant B/Ga ratio of 0.005. Phase separation into pure GaN and BxGal-xN alloy with x=0.30 was deposited for a B/Ga reactant ratio of 0.01. This is the highest B fraction of the wurtzite structure alloy ever reported. For B/Ga ratio ≥ 0.02, no BxGal-xN was formed, and the solid solution contained two phases: wurtzite GaN and BN based on the results of Auger and x-ray diffraction. The band edge emission of BxGal-xN varied from 3.451 eV for x=0 with FWHM of 39.2 meV to 3.465 eV for x=0.015 with FWHM of 35.1 meV. The narrower FWHM indicated that the quality of GaN epilayer was improved with small amount of boron incorporation.

scholarly journals Growth and Characterization of BxGa1−xN on 6H-SiC (0001) by Movpe

1999 ◽  
Vol 4 (S1) ◽  
pp. 429-434 ◽  
Author(s):  
C. H. Wei ◽  
Z. Y. Xie ◽  
J. H. Edgar ◽  
K. C. Zeng ◽  
J. Y. Lin ◽  
...  
Keyword(s):  
Single Phase ◽  
Band Edge Emission ◽  
Reactant Ratio ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Edge Emission ◽  
X Ray ◽  
Two Phases

Boron was incorporated into GaN in order to determine its limits of solubility, its ability of reducing the lattice constant mismatch with 6H-SiC, as well as its effects on the structural and optical properties of GaN epilayers. BxGa1−xN films were deposited on 6H-SiC (0001) substrates at 950 °C by low pressure MOVPE using diborane, trimethylgallium, and ammonia as precursors. A single phase alloy with x=0.015 was successfully produced at a gas reactant B/Ga ratio of 0.005. Phase separation into pure GaN and BxGa1−xN alloy with x=0.30 was deposited for a B/Ga reactant ratio of 0.01. This is the highest B fraction of the wurtzite structure alloy ever reported. For B/Ga ratio ≥ 0.02, no BxGa1−xN was formed, and the solid solution contained two phases: wurtzite GaN and BN based on the results of Auger and x-ray diffraction. The band edge emission of BxGa1−xN varied from 3.451 eV for x=0 with FWHM of 39.2 meV to 3.465 eV for x=0.015 with FWHM of 35.1 meV. The narrower FWHM indicated that the quality of GaN epilayer was improved with small amount of boron incorporation.

Growth and Characterization of (012)- and (001)-Oriented Epitaxial Anatase Thin Films

2006 ◽  
Vol 46 ◽  
pp. 146-151
Author(s):  
Andriy Lotnyk ◽  
Stephan Senz ◽  
Dietrich Hesse
Keyword(s):  
Thin Films ◽  
Cross Section ◽  
Single Phase ◽  
Electron Beam Evaporation ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Transmission Electron

Single phase TiO2 thin films of anatase structure have been prepared by reactive electron beam evaporation. Epitaxial (012)- and (001)-oriented anatase films were successfully obtained on (110)- and (100)-oriented SrTiO3 substrates, respectively. X-ray diffraction and cross section transmission electron microscopy investigations revealed a good epitaxial quality of the anatase films grown on the SrTiO3 substrates.

The Fabrication of Ag Islands on AlN/GaN/AlN/Si(111) by Using Thermal Evaporator and Thermal Annealing Methods

2011 ◽  
Vol 364 ◽  
pp. 327-332 ◽  
Author(s):  
Mohd Zaki Mohd Yusoff ◽  
А. Mahyuddin ◽  
Hassan Zainuriah ◽  
Abu Hassan Haslan ◽  
Mat Johar Abdullah ◽  
...  
Keyword(s):  
Yellow Emission ◽  
Band Edge Emission ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Edge Emission ◽  
X Ray ◽  
Treated Sample ◽  
Thermal Evaporator ◽  
Yellow Emission Band

In this paper, we studied growth of AlN/GaN/AlN on Si (111) by using plasma assisted molecular beam epitaxy (PA-MBE) system. The structural and optical characteristics of the sample have been investigated by using high resolution X-ray diffraction (HR-XRD), Raman spectroscopy and photoluminescence (PL). PL spectrum of the sample has shown sharp and intense band edge emission of GaN with the absence of yellow emission band, indicating good crystal quality of the sample. The silver (Ag) metal contact was then deposited on the sample followed by thermal treatment at 500°C and 700°C, respectively. Treated sample at 700°C showed good spherical Ag islands on sample compared to the treated sample at 500°C. The effect of Ag islands on the electrical characteristics of sample was also examined by usingI-Vmeasurement. The results showed that the treated sample at 700°C has decreased the photo-current of Schottky diode.

Characterization of Natural and Synthesized FeTiO3 Crystals With RBS/PIXE/XRD

1997 ◽  
Vol 07 (03n04) ◽  
pp. 265-275
Author(s):  
R. Q. Zhang ◽  
S. Yamamoto ◽  
Z. N. Dai ◽  
K. Narumi ◽  
A. Miyashita ◽  
...  
Keyword(s):  
Single Crystals ◽  
Ion Beam ◽  
Pressure Control ◽  
Floating Zone ◽  
X Ray Diffraction ◽  
X Ray ◽  
Beam Analysis ◽  
Ppm Level

Natural FeTiO 3 (illuminate) and synthesized FeTiO 3, single crystals were characterized by Rutherford backscattering spectroscopy combined with channeling technique and particle-induced x-ray emission (RBS-C and PIXE). The results obtained by the ion beam analysis were supplemented by the x-ray diffraction analysis to identify the crystallographic phase. Oriented single crystals of synthesized FeTiO 3 were grown under the pressure control of CO 2 and H 2 mixture gas using a single-crystal floating zone technique. The crystal quality of synthesized FeTiO 3 single crystals could be improved by the thermal treatment but the exact pressure control is needed to avoid the precipitation of Fe 2 O 3 even during the annealing procedure. Natural FeTiO 3 contains several kinds of impurities such as Mn , Mg , Na and Si . The synthesized samples contain Al , Si and Na which are around 100 ppm level as impurities. The PBS-C results of the natural sample imply that Mn impurities occupy the Fe sublattice in FeTiO 3 or in mixed phase between ilmenite and hematite.

Characterization of WC-Co Coatings Using HP/HVOF Process

1996 ◽  
Author(s):  
S.Y. Hwang ◽  
B.G. Seong ◽  
M.C. Kim
Keyword(s):  
Wear Resistance ◽  
X Ray Diffraction ◽  
High Carbon ◽  
Properties Of Coatings ◽  
X Ray ◽  
Hvof Process ◽  
Number Of Passes ◽  
Oxygen Fuel

Abstract To maintain surface roughness of process rolls in cold rolling steel plants, WC-Co coatings have been known to be effective ones. In this study, a high pressure/high velocity oxygen fuel (HP/HVOF) process was used to obtain WC-Co coatings. To get the best quality of coatings, WC-Co coatings are sprayed with numerous powders made by various processes. These powders include agglomerated sintered powders, fused-crushed powders, extra high carbon WC-Co powders and (W2C, WC)-Co powders. After spraying, properties of coatings such as hardness, wear resistance. X-ray diffraction, and microstructures were analyzed. For coatings produced by agglomerated-sintered powders, hardness of the coating increased as power levels and the number of passes were increased. In case of the coatings produced by fused-crushed powders, a very low deposition rate was obtained due to a low flowablity of the powders. In addition, the WC-Co coatings sprayed with extra carbon content of WC-Co did not show improved hardness and wear resistance. Also, some decomposition of WC was observed in the coating. Finally, the coatings produced by (W2C, WC)-Co powders produced higher hardness and lower wear resistance coating.

scholarly journals Crystallization, optimization and preliminary X-ray characterization of a metal-dependent PI-PLC fromStreptomyces antibioticus

2012 ◽  
Vol 68 (11) ◽  
pp. 1378-1386 ◽  
Author(s):  
Michael R. Jackson ◽  
Thomas L. Selby
Keyword(s):  
X Ray Diffraction ◽  
Hanging Drop ◽  
Orthorhombic Space Group ◽  
X Ray ◽  
Streptomyces Antibioticus ◽  
Cell Parameters ◽  
Heavy Atoms ◽  
Hanging Drop Method

A recombinant metal-dependent phosphatidylinositol-specific phospholipase C (PI-PLC) fromStreptomyces antibioticushas been crystallized by the hanging-drop method with and without heavy metals. The native crystals belonged to the orthorhombic space groupP222, with unit-cell parametersa= 41.26,b= 51.86,c = 154.78 Å. The X-ray diffraction results showed significant differences in the crystal quality of samples soaked with heavy atoms. Additionally, drop pinning, which increases the surface area of the drops, was also used to improve crystal growth and quality. The combination of heavy-metal soaks and drop pinning was found to be critical for producing high-quality crystals that diffracted to 1.23 Å resolution.

Rapid Synthesis and Characterization of CuInS2 Prepared Using Microwave-Assisted Heating

2015 ◽  
Vol 775 ◽  
pp. 143-146
Author(s):  
Ming Kwen Tsai ◽  
Yueh Chien Lee ◽  
Chia Chih Huang ◽  
Sheng Yao Hu ◽  
Kwong Kau Tiong ◽  
...  
Keyword(s):  
Synthesis And Characterization ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Rapid Synthesis ◽  
X Ray ◽  
Sem Image ◽  
Microwave Assisted ◽  
Calcination Treatment ◽  
Scanning Electron

In this work, the CuInS2 nanoparticles are successfully synthesized by microwave-assisted heating technique and further calcined at 400 °C. The morphological, structural, and optical properties of the synthesized CuInS2 nanoparticles are investigated by scanning electron microscope (SEM), X-ray diffraction (XRD), Raman scattering, and transmittance measurement, respectively. The SEM image shows the clear particle shape of the calcined CuInS2 nanoparticles. After calcination treatment, the fundamental (112) peak of the XRD spectrum and a broad Raman peak mixed with chalcopyrite and CuAu structures support the improved crystallinity of the calcined CuInS2 nanoparticles.

Synthesis and Characterization of Star-Like Copper Oxide (CuO) with Submicrometer Sizes

2012 ◽  
Vol 465 ◽  
pp. 186-191
Author(s):  
Shou Long Gong ◽  
Fang Lin Du
Keyword(s):  
Electron Microscopy ◽  
Synthesis And Characterization ◽  
Simple Liquid ◽  
Liquid Phase Deposition ◽  
Monoclinic Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scanning Electron

Star-like CuO with submicrometer sizes was fabricated via a simple liquid-phase deposition with the assistant of PVP and Na2MoO4. The as-prepared CuO have been characterized by X-ray diffraction(XRD) and scanning electron microscopy (SEM). The results showed that the as-prepared CuO owned monoclinic structure, the concentrations of PVP, Na2MoO4 and NaOH are very important to the morphology of CuO. The quality of PVP impacts the formation of thin flakes on the skeletons. Meanwhile, the growth of dendritic skeletons was depended on the addition of Na2MoO4, and the effect of NaOH is to control the dimension of CuO structure.

Characterization of Zn0.96Al0.02Ga0.02O Thermoelectric Material

2013 ◽  
Vol 802 ◽  
pp. 227-231
Author(s):  
Panida Pilasuta ◽  
Pennapa Muthitamongkol ◽  
Chanchana Thanachayanont ◽  
Tosawat Seetawan
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Single Phase ◽  
Hexagonal Structure ◽  
Hexagonal Crystal Structure ◽  
X Ray Diffraction ◽  
Hexagonal Crystal ◽  
X Ray ◽  
Transmission Electron

Crystal structure of Zn0.96Al0.02Ga0.02O was analyzed by X-Ray diffraction (XRD) technique and the microstructure was observed by scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The XRD results showed single phase and hexagonal structure a = b = 3.24982 Å, and c = 5.20661 Å. The SEM and TEM results showed the grain size of material arrangement changed after sintering and TEM diffraction pattern confirmed hexagonal crystal structure of Zn0.96Al0.02Ga0.02O after sintering.

SYNTHESIS AND PIXE CHARACTERIZATION OF CuInSe2 AND CuIn3Se5

2006 ◽  
Vol 16 (01n02) ◽  
pp. 127-136
Author(s):  
P. MALAR ◽  
TAPASH RANJAN RAUTRAY ◽  
V. VIJAYAN ◽  
S. KASIVISWANATHAN
Keyword(s):  
Electron Microscopy ◽  
Single Phase ◽  
Compositional Analysis ◽  
X Ray Diffraction ◽  
Stoichiometric Mixture ◽  
X Ray ◽  
Transmission Electron ◽  
Xrd Studies ◽  
Constituent Elements

Polycrystalline ingots of CuInSe 2 and CuIn 3 Se 5 were synthesized by melt-quench technique starting from the stoichiometric mixture of constituent elements. X-ray Diffraction (XRD) studies confirmed the single-phase nature of the materials. Compositional analysis by Particle Induced X-ray Emission (PIXE) showed that the compounds are near stoichiometric. Thin films of CuInSe 2 and CuIn 3 Se 5 were grown from pre-synthesized CuInSe 2 and CuIn 3 Se 5 powders. The films were polycrystalline, single-phase and near stoichiometric in nature, as indicated by Transmission Electron Microscopy (TEM) and PIXE studies.

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